KNX6165A KIA | Alldatasheet
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10A，650V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX6165AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1. Description TheKNX6165A-ChannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage, highspeedpowerswitchingapplicationssuchashighefficiencyswitchedmodepowersupplies,active powerfactorcorrection,electroniclampballastsbasedonhalfbridgetopology 2.Features n ROHSCompliant n RDS(ON),typ=0.6 Ω@VGS=10V n LowGateChargeMinimizeSwitchingLoss n FastRecoveryBodyDiode 3. Pinconfiguration 1of7 Rev1.0Jan.2018 Pin Function
1 Gate
2 Drain
3 Source
4 Drain
10A，650V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX6165AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. OrderingInformation PartNumber Package Brand KNF6165A TO-220F KIA KNP6165A TO-220 KIA 5. Absolutemaximumratings TC=25℃ unlessotherwisespecified Parameter Symbol Ratings Unit TO220 TO22F Drain-to-SourceVoltage VDSS 650 VGate-to-SourceVoltage VGSS ±20 ContinuousDrainCurrent ID 10 APulsedDrainCurrentatV GS=10V IDM 40 SinglePulseAvalancheEnergy EAS 800 mJ PowerDissipation PD 216 50 W DeratingFactorabove25 ºC 1.72 0.4 W/ ºC MaximumTemperatureforSoldering Leadsat0.063in(1.6mm)fromCasefor10 seconds,PackageBodyfor10seconds TL TPAK 300 ºC OperatingandStorageTemperatureRange TJ&T STG -55to150 Caution:Stressesgreaterthanthoselistedinthe “AbsoluteMaximumRatings ” maycausepermanent damagetothedevice. 6. Thermalcharacteristics Parameter Symbol Ratings UnitsTO220 TO220F Thermalresistance,junction-ambient RθJA 62 100 ºC/W Thermalresistance,Junction-case RθJC 0.58 2.5 2of7 Rev1.0Jan.2018
10A，650V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX6165AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7. Electricalcharacteristics (TJ=25°C,unlessotherwisenotes) Parameter Symbol Conditions Min Typ Max Units Offcharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 650 - - V Drain-to-sourceLeakageCurrent IDSS VDS=650,V GS=0V - - 1 μA VDS=520,V GS=0V TJ=125ºC, - - 100 μA Gate-bodyleakagecurrent IGSS VGS=20V,VDS=0V - - +1.0 nA VGS=-20V,VDS=0V - - -1.0 nA Oncharacteristics Staticdrain-sourceon-resistance RDS(on) VGS=10V,ID=5A - 0.6 0.9 Ω Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 2.0 - 4.0 V ForwardTransconductance gfs VDS=15V,ID=5A - 10 - S Dynamiccharacteristics Inputcapacitance Ciss VDS=25V,VGS=0V, f=1MHz - 1554 - pF Outputcapacitance Coss - 153 - pF Reversetransfercapacitance Crss - 15 - pF Totalgatecharge Turn-ondelaytime td(on) VDD=325,ID=10A, VGS=10V,RG=9.1Ω - 15 - ns Risetime tr - 25 - ns Turn-offdelaytime td(off) - 51 - ns Falltime tf - 31 - ns Totalgatecharge Qg VDS=325V,ID=10A, VGS=0to10V - 39 - nC Gate-sourcecharge Qgs - 7.0 - nC Gate-draincharge Qgd - 16 - nC Drain-sourcediodecharacteristics Drain-sourcediodeforwardvoltage VSD VGS=0V,Is=10A - - 1.5 V Continuousdrain-sourcecurrent [2] ISD Integralpn-diode InMOSFET - - 10 A Pulseddrain-sourcecurrent [2] ISM - - 40 A Reverserecoverytime trr VGS=0V,IF=10A dlSD/dt=100A/μs - 273 - ns Reverserecoverycharge Qrr - 1.7 - μC Note: [1]TJ=+25 ºCto+150 ºC [2]Pulsewidth ≤380μs;dutycycle ≤2%. 3of7 Rev1.0Jan.2018
10A，650V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX6165AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 8. TypicalCharacteristics 4of7 Rev1.0Jan.2018
10A，650V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX6165AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of7 Rev1.0Jan.2018
10A，650V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX6165AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of7 Rev1.0Jan.2018
10A，650V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX6165AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7of7 Rev1.0Jan.2018