KNX4540A KIA | Alldatasheet
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6A，400V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX4540AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.GeneralFeatures n RoHSCompliant n RDS(ON),typ.=0.8Ω@VGS=10V n LowGateChargeMinimizeSwitchingLoss n FastRecoveryBodyDiode 2.Applications n Adaptor n Charger n SMPSStandbyPower 3. Pinconfiguration 1of8 Rev1.0Aug.2018 Pin Function
1 Gate
2 Drain
3 Source
4 Drain
6A，400V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX4540AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. OrderingInformation PartNumber Package Brand KNP4540A TO-220 KIA KNF4540A TO-220F KIA 5. Absolutemaximumratings (TC=25 ºC,unlessotherwisespecified) Symbol Parameter KNP4540A KNF4540A Unit VDSS Drain-to-SourceVoltage 400 VVGSS Gate-to-SourceVoltage ±30 ID ContinuousDrainCurrent 6.0 A IDM PulsedDrainCurrentatV GS=10V 24 EAS SinglePulseAvalancheEnergy 200 mJ PD PowerDissipation 75 25 W DeratingFactorabove25 ºC 0.6 0.2 W/ ºC TL TPAK MaximumTemperatureforSoldering Leadsat0.063in(1.6mm)fromCasefor10 seconds,PackageBodyfor10seconds 300 260 ºC TJ&TSTG OperatingandStorageTemperatureRange -55to150 Caution:Stressesgreaterthanthoselistedinthe “AbsoluteMaximumRatings ” maycausepermanent damagetothedevice. 6. Thermalcharacteristics Symbol Parameter KNP4540A KNF4540A Unit RθJC ThermalResistance,Junction-to-Case 1.67 5.0 ºC/WRθJA ThermalResistance,Junction-to-Ambient 62 100 2of8 Rev1.0Aug.2018
6A，400V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX4540AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics OFFCharacteristics (TJ=25°C,unlessotherwisespecified) Symbol Parameter TestConditions Min. Typ. Max. Unit BVDSS Drain-to-SourceBreakdownVoltage VGS=0V,I D=250uA 400 -- -- V IDSS Drain-to-SourceLeakageCurrent VDS=400V,V GS=0V -- -- 1 uAVDS=320V,VGS=0V, IGSS Gate-to-SourceLeakageCurrent VGS=+20V,VDS=0V -- -- +1.0 uA VGS=-20V,V DS=0V -- -- -1.0 ONCharacteristics (TJ=25°C,unlessotherwisespecified) Symbol Parameter TestConditions Min. Typ. Max. Unit RDS(ON) StaticDrain-to-SourceOn-Resistance VGS=10V,I D=3.0A -- 0.8 1.0 Ω VGS(TH) GateThresholdVoltage VDS=VGS,ID=250uA 2.0 -- 4.0 V gFS ForwardTransconductance VDS=15V,ID=3A -- 5.0 -- S DynamicCharacteristics Essentiallyindependentofoperatingtemperature Symbol Parameter TestConditions Min. Typ. Max. Unit Ciss InputCapacitance VGS=0V, VDS=25V, f=1.0MHZ -- 490 -- pFCrss ReverseTransferCapacitance -- 7.5 -- Coss OutputCapacitance -- 63 -- Qg TotalGateCharge VDD=200V, ID=6A, VGS=0to10V -- 14 -- nCQgs Gate-to-SourceCharge -- 3.1 -- Qgd Gate-to-Drain(Miller)Charge -- 6.4 -- ResistiveSwitchingCharacteristics Essentiallyindependentofoperatingtemperature Symbol Parameter TestConditions Min. Typ. Max. Unit td(ON) Turn-onDelayTime VDD=200V, ID=6A, VGS=10V RG=9.1Ω -- 8.1 -- nS trise RiseTime -- 10.2 -- td(OFF) Turn-OffDelayTime -- 26 -- tfall FallTime -- 14 -- Source-DrainBodyDiodeCharacteristics (TJ=25°C,unlessotherwisespecified) Symbol Parameter TestConditions Min Typ. Max. Unit ISD ContinuousSourceCurrent [2] IntegralPN-diodein MOSFET -- -- 6.0 A ISM PulsedSourceCurrent [2] -- -- 24 VSD DiodeForwardVoltage IS=30A,V GS=0V -- -- 1.5 V trr Reverserecoverytime VGS=0V,I F=6A, diF/dt=100A/μs -- 305 -- ns Qrr Reverserecoverycharge -- 840 -- uC Note: 1.TJ=+25°Cto+150 °C 2.Pulsewidth ≤380μs;dutycycle ≤2%. 3of8 Rev1.0Aug.2018
6A，400V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX4540AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of8 Rev1.0Aug.2018
6A，400V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX4540AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of8 Rev1.0Aug.2018
6A，400V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX4540AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of8 Rev1.0Aug.2018
6A，400V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX4540AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7of8 Rev1.0Aug.2018
6A，400V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX4540AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 8of8 Rev1.0Aug.2018