KNX3206A KIA | Alldatasheet
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110A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX3206AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Features n RDS(ON)=6.5mΩ(typ)@VGS=10V n LowR DS(ON) toMinimizeConductiveLoss n LowGateChargeforFastSwitchingApplication n OptimizedB VDSS Capability 2.Applications n PowerSupply n DC-DCconverters 3. Pinconfiguration 1of7 Rev1.0Aug.2018 Pin Function
1 Gate
2 Drain
3 Source
4 Drain
110A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX3206AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. OrderingInformation PartNumber Package Brand KND3206A TO-252 KIA KNB3206A TO-263 KIA KNP3206A TO-220 KIA KNH3206A TO-3P KIA 5. Absolutemaximumratings *Draincurrentlimitedbymaximumjunctiontemperature. 6. Thermalcharacteristics 2of7 Rev1.0Aug.2018 Parameter Symbol Value Units TO-252* TO-263 TO-220 TO-3P Drain-to-sourcevoltage VDSS 60 V Continuousdraincurrent ID1 110* 110 110 A Pulsedraincurrent@VG=10V IDM 439* 439 439 A PowerDissipation PD 62 156 185 W DeratingFactorabove25 ºC 0.41 1.04 1.23 W/ºC Gate-to-thresholdvoltage VGS +20 V SinglePulseAvalancheEnergy(L=1mH) EAS 288 mJ PulsedAvalancheEnergy IAS Figure9 A Junction&storagetemperaturerange TJ,TSTG -55～175 ºC Parameter Sym bol Max Units TestConditions To-252 To-263 To-220 To-3P Junctiontocase Rθjc 2.42 0.96 0.81 ºC/W Watercooledheatsink,P D adjustedfor apeakjunctionTemperatureof175 ºC
110A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX3206AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7. Electricalcharacteristics (TA=25°C,unlessotherwisenoted) Parameter Symbol Conditions Min Typ Max Unit Staticcharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 60 - - V Drain-sourceLeakageCurrent IDSS VDS=48V,VGS=0V TJ=125 ºC - - 1 μA - - 100 Gate-to-SourceForwardLeakage IGSS VGS=+20V,VDS=0V - - +100 nAGate-to-SourceReverseLeakage Drain-sourceon-stateresistance RDS(on) VGS=10V,ID=24A - 6.5 8 mΩ Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 2 - 4 V Diodecharacteristics Diodeforwardvoltage VSD IS=24A,VGS=0V - - 1.4 V Reverserecoverytime trr Is=38A,dl/dt=100A/μs - 75 nS Reverserecoverycharge Qrr - 100 nC Dynamiccharacteristics Inputcapacitance Ciss VGS=0V,V DS=55V, F=1.0MHz - 3400 - pFOutputcapacitance Coss - 430 - Reversetransfercapacitance Crss - 145 - Turn-ondelaytime td(ON) VDD=30V,ID=55A, VGS=10V,RG=2.5Ω - 15 - nS Turn-onrisetime tr - 43 - Turn-offdelaytime td(OFF) 30 - Turn-offfalltime tf - 10 - Gatechargecharacteristics Totalgatecharge Qg VDD=30V,V GS=10V, ID=55A, - 50 - nCGate-sourcecharge Qgs - 20 - Gate-draincharge Qgd - 15 - Note: 1Calculatedcontinuouscurrentbaseduponmaximumallowablejunctiontemperature+175 ºC.Package limitationcurrentis80A. 3of7 Rev1.0Aug.2018
110A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX3206AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 8.Testcircuitsandwaveforms 4of7 Rev1.0Aug.2018
110A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX3206AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of7 Rev1.0Aug.2018
110A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX3206AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of7 Rev1.0Aug.2018
110A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX3206AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7of7 Rev1.0Aug.2018