KNX2708A KIA | Alldatasheet

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160A，80V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX2708AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.GeneralFeatures n ProprietaryNewTrenchTechnology n RDS(ON),typ.=4.0mΩ@VGS=10V n LowGateChargeMinimizeSwitchingLoss n FastRecoveryBodyDiode 2.Applications n HighefficiencyDC/DCconverters n SynchronousRectification n UPSInverter 3. Pinconfiguration 1of8 Rev1.0Nov.2018 Pin Function

1 Gate

2 Drain

3 Source

4 Drain

160A，80V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX2708AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. OrderingInformation PartNumber Package Brand KNP2708A TO-220 KIA KNB2708A TO-263 KIA 5. Absolutemaximumratings (TC=25 ºC,unlessotherwisespecified) Symbol Parameter Rating Unit VDSS Drain-to-SourceVoltage [1] 80 VVGSS Gate-to-SourceVoltage ±20 ID ContinuousDrainCurrent [2] 160 AContinuousDrainCurrent [3] 80 ID @T C=100ºC ContinuousDrainCurrent@T C=100 ºC [2] 116 IDM PulsedDrainCurrentatV GS=10V[2,4] 640 EAS SinglePulseAvalancheEnergy 1100 mJ dv/dt PeakDiodeRecoverydv/dt [3] 5.0 V/ns PD PowerDissipation 313 W DeratingFactorabove25 ºC 2.08 W/ ºC TL TPAK MaximumTemperatureforSoldering Leadsat0.063in(1.6mm)fromCasefor10 seconds,PackageBodyfor10seconds 300 260 ºC TJ&TSTG OperatingandStorageTemperatureRange -55to175 Caution:Stressesgreaterthanthoselistedinthe “AbsoluteMaximumRatings ” maycausepermanent damagetothedevice. 6. Thermalcharacteristics Symbol Parameter Rating Unit RθJC ThermalResistance,Junction-to-Case 0.48 ºC/WRθJA ThermalResistance,Junction-to-Ambient 62 2of8 Rev1.0Nov.2018

160A，80V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX2708AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7. Electricalcharacteristics OFFCharacteristics (TJ=25°C,unlessotherwisespecified) Symbol Parameter TestConditions Min. Typ. Max. Unit BVDSS Drain-to-SourceBreakdownVoltage VGS=0V,I D=250uA 80 -- -- V IDSS Drain-to-SourceLeakageCurrent VDS=80V,V GS=0V -- -- 5 uAVDS=64V,VGS=0V, IGSS Gate-to-SourceLeakageCurrent VGS=+20V,VDS=0V -- -- +100 nA VGS=-20V,V DS=0V -- -- -100 ONCharacteristics (TJ=25°C,unlessotherwisespecified) Symbol Parameter TestConditions Min. Typ. Max. Unit RDS(ON) StaticDrain-to-SourceOn-Resistance VGS=10V,I D=24A[5] -- 4.0 4.8 mΩ VGS(TH) GateThresholdVoltage VDS=VGS,ID=250uA 2.0 -- 4.0 V gfs ForwardTransconductance VDS=10V,I D=80A[5] - 130 - S DynamicCharacteristics Essentiallyindependentofoperatingtemperature Symbol Parameter TestConditions Min. Typ. Max. Unit Ciss InputCapacitance VGS=0V, VDS=25V, f=1.0MHZ -- 9300 -- pFCoss OutputCapacitance -- 650 -- Crss ReverseTransferCapacitance -- 260 -- Rg GateSeriesResistance f=1.0MHZ -- 2.7 -- Ω Qg TotalGateCharge VDD=40V, ID=80A, VGS=0to10V -- 115 -- nCQgs Gate-to-SourceCharge -- 40 -- Qgd Gate-to-Drain(Miller)Charge -- 30 -- ResistiveSwitchingCharacteristics Essentiallyindependentofoperatingtemperature Symbol Parameter TestConditions Min. Typ. Max. Unit td(ON) Turn-onDelayTime VDD=40V, ID=40A, VGS=10V RG=10Ω -- 50 -- nS trise RiseTime -- 135 -- td(OFF) Turn-OffDelayTime -- 112 -- tfall FallTime -- 75 -- Source-DrainBodyDiodeCharacteristics (TJ=25°C,unlessotherwisespecified) Symbol Parameter TestConditions Min Typ. Max. Unit ISD ContinuousSourceCurrent [2] IntegralPN-diodein MOSFET -- -- 160 A ISM PulsedSourceCurrent [2] -- -- 640 VSD DiodeForwardVoltage IS=80A,V GS=0V -- -- 1.2 V trr Reverserecoverytime VGS=0V,I F=80A, diF/dt=100A/μs -- 85 -- ns Qrr Reverserecoverycharge -- 205 -- nC Note:[1]T J =+25 ºCto+175 ºC. [2]Siliconlimitedcurrentonly. [3]Packagelimitedcurrent. [4]Repetitiverating;pulsewidthlimitedbymaximumjunctiontemperature. [5]Pulsewidth ≤380µs;dutycycle ≤2%. 3of8 Rev1.0Nov.2018

160A，80V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX2708AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 8.Testcircuitsandwaveforms 4of8 Rev1.0Nov.2018

160A，80V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX2708AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of8 Rev1.0Nov.2018

160A，80V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX2708AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of8 Rev1.0Nov.2018

160A，80V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX2708AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7of8 Rev1.0Nov.2018

160A，80V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX2708AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 8of8 Rev1.0Nov.2018