KNX1906B KIA | Alldatasheet

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230A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX1906BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Features n RDS(on)=2.7mΩ（typ.）@V GS=10V n Leadfreeandgreendeviceavailable n LowR DS-ontominimizeconductiveloss n Highavalanchecurrent 2.Applications n Powersupply n UPS n Batterymanagementsystem 3.Symbol 1of5 Rev1.0Mar.2018 Pin Function

1 Gate

2 Drain

3 Source

4 Drain

230A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX1906BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. OrderingInformation PartNumber Package Brand KNB1906B TO-263 KIA KNP1906B TO-220 KIA 5. Absolutemaximumratings (TA=25°C,unlessotherwisenoted) Parameter Symbol Rating Units Drain-sourcevoltage VDSS 60 V Gate-sourcevoltage VGSS +25 V Maximumjunctiontemperature TJ 175 ºC Storagetemperaturerange TSTG -55to175 ºC Continuousdraincurrent TC=25ºC ID3 230 A TC=100ºC 150 A Pulsedraincurrent TC=25ºC IDM4 880 A Avalanchecurrent IAS5 40 A Avalancheenergy EAS5 800 mJ Maximumpowerdissipation TC=25 ºC PD 200 W TC=100ºC 100 W 6. Thermalcharacteristics Parameter Symbol Rating Unit Thermalresistance,Junction-ambient RθJA 62.5 ºC/W Thermalresistance,Junction-case RθJC 0.75 ºC/W 2of5 Rev1.0Mar.2018

230A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX1906BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7. Electricalcharacteristics (TA=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage BVDSS VGS=0V,IDS=250μA 60 - - V Zerogatevoltagedraincurrent IDSS VDS=48V,V GS=0V - - 1 μA TJ=125°C - - 20 Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 2.0 3.0 4.0 V Gateleakagecurrent IGSS VGS=+25V,V DS=0V - - +100 nA Drain-sourceon-stateresistance RDS(on)1 VGS=10V,ID=50A - 2.7 3.5 mΩ Gateresistance Rg2 VDS=0V,V GS=0V,f=1MHz - 1.6 - Ω Diodeforwardvoltage VSD1 ISD=60A,V GS=0V - 0.9 1.3 V Diodecontinuousforwardcurrent IS3 - - 50 A Reverserecoverytime trr IF=60A,dl SD/dt=100A/μs - 70 - nS Reverserecoverycharge Qrr - 150 - nC Inputcapacitance Ciss2 VDS=30V,VGS=0V, f=1MHz - 6110 - pFOutputcapacitance Coss2 - 1020 - Reversetransfercapacitance Crss2 - 771 - Turn-ondelaytime td(on)2 VDD=30V,I D=60A, RG=6Ω,VGS=10V - 20 - ns Risetime tr2 - 11 - Turn-offdelaytime td(off)2 - 75 - Falltime tf2 - 65 - Totalgatecharge Qg2 VDS=30V,V GS=15V ID=10A - 742 - nCGate-sourcecharge Qgs2 - 97.9 -- Gate-draincharge Qgd2 - 227 -- Note:1:Pulsetest;pulsewidth< 300usdutycycle< 2%. 2.Guaranteedbydesign,notsubjecttoproductiontesting. 3.Packagelimitationcurrentis50A,Calculatedcontinuouscurrentbasedonmaximumallowable junctiontemperature. 4:Repetitiverating,pulsewidthlimitedbymaxjunctiontemperature. 5:StartingTJ=25 ºC,L=0.5mH.IAS=60A. 3of5 Rev1.0Mar.2018

230A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX1906BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 8. typicalOperatingCharacteristics 4of5 Rev1.0Mar.2018

230A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX1906BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of5 Rev1.0Mar.2018