HDL6V5583

HDL6V5583 ABLIC | Alldatasheet

Document overview

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Technical content

Features

• 0 to ±100V output voltage
• ±1.8A source and sink peak current for pulsing without output blocking high-voltage (HV) diodes
• ±1.0A source and sink peak current for active ground clamping with output blocking HV diodes
• 500 Ω (±0.05A) active output termination working with active ground clamping
• Embedded/external-selectable floating volt age regulators to the gate drive buffers
• Input data synchronization with a clock signal (user-selectable)
• Integrated noise-cut low-voltage (LV) diodes
• Up to 20MHz operation frequency (@±60V output, 220pF load)
• 1.8V to 5V CMOS logic interface
• 4-mode output drive current control for power saving
• Thermal protection
• Power supply sequence free
• Latch-up free, lower crosstalk betw een channels by SOI CMOS technology
• 52-lead 8mm x 8mm QFN package (RoHS compliant)
• Pin-compatible with HDL6V5582/83E Fig.1 Block diagram

OCTAL ±100V 1.8A 3-LEVEL ULTRASOUND PULSER HDL6V5583 Rev.2.1_00 1. Absolute Maximum Ratings T A=25°C unless otherwise noted. Table 1 Absolute Maximum Ratings No. Items Symbol Value Units Condition 1 Positive logic supply V LL -0.4 to +7 V 2 Positive logic and level translator supply V DD -0.4 to +7 V 3 Negative logic and level translator supply V SS -7 to +0.4 V 4 Positive high voltage supply V PP -0.5 to +105 V 5 Negative high voltage supply VNN -105 to +0.5 V

6 Differential high voltage supply V PP- VNN +210 V

7 High voltage outputs (x=1~8)* HV OUTx -105 to +105 V

8 Gate drive buffer voltages (VPP- VFP),

(VFN- VNN) -0.4 to +7 V FVSEL=0 9 THP (THermal Protection) output THP -0.4 to +7 V

10 All logic input voltages (x=1~8)

PINx, NINx, EN, CLK, CLKEN, CC1, CC0, ATHP, FVSEL -0.4 to +7 V

11 Operating junction temperature T Jop -20 to +150 oC

12 Storage temperature T STG -55 to +150 oC

13 Maximum power dissipation P Dmax 4 W

Note: Stresses beyond the absolute maximum ratings may cause permanent damage to the product. 2. Operating Supply Voltages, Condi tions, and Circuits (Recommended)

2.1 Operating Supply Voltages and Conditions

Table 2 Recommended Operating Supply Voltages and Conditions No Items Symbol Min Typ Max Units Condition 1 Logic voltage supply V LL 2.4 2.5 to 5 V DD V Clock mode(≤80MHz) 2.6 2.7 to 5 V DD V Clock mode(≤100MHz) 1.7 1.8 to 5 V DD V Transparent mode 2 Positive low voltage supply V DD 4.75 5 5.25 V 3 Negative low voltage supply V SS -5.25 -5 -4.75 V

4 Positive high voltage supply V PP 0 - 100 V

5 Negative high voltage supply V NN -100 - 0 V

6 Differential high voltage supply V PP- VNN 0 - 200 V

7 P-ch floating gate drive voltage supply V FP V PP-5.25 V PP-5 V PP-4.75 V FVSEL=0 8 N-ch floating gate drive voltage supply V FN V NN+4.75 V NN+5 V NN+5.25 V FVSEL=0 9 High-level logic input voltage V IH 0.8V LL - V LL V 10 Low-level logic input voltage V IL 0 - 0.2V LL V

11 IC substrate voltage * V SUB - 0 - V

12 Slew rate limit of V PP, VNN SR MAX - - 25 V/ms

13 Operating free-air temperature T A 0 25 75 oC

Note: * The package exposed pad internally connected to the chip substrate must be soldered to the ground.

OCTAL ±100V 1.8A 3-L EVEL ULTRASOUND PULSER Rev.2.1_00 HDL6V5583

2.2 Power-Up/Down Sequence

Power-Supply Sequence is not required.

2.3 Application Circuits

(a) EMBEDDED floating voltage supplies (FVSEL=1) Fig. 2-(a) Typical Application Circuit-1 Note: 1. High-voltage power supply pins, V PP/VNN, can draw fast transient currents up to ±1.8A. Therefore, ceramic capacitors of over 200V 0.1μF to 1μF (C1~8) should be connected as close to the pins as possible for bypassing purpose. Ceramic capacitors of over 15V 0.1 μF to 1 μF (C13~15) should also be connected close to the low- voltage power supply pins, VLL/VDD/VSS. 2. Ceramic capacitors of over 15V 100nF (C9~12) and over 15V 10μF (C16~19) should be connected between each floating voltage pin (V FP/VFN) and high-voltage power supply pin for bypa ssing purpose. Connect those as close to the pins as possible. 3. It is also important to minimize the trace length and to have enough trace width of those high voltage and floating voltage lines. 4. The thermal tab on the bottom of the package must be soldered to the GND. 5. [PRECAUTION] External high-voltage clamp diodes between HV OUTx and V PP/VNN as shown in Fig.2-(a) are strongly recommended to mitigate excessive voltage overshoot caused by a reflection from a probe.

OCTAL ±100V 1.8A 3-LEVEL ULTRASOUND PULSER HDL6V5583 Rev.2.1_00 2.3 Application Circuits (Cont.) (b) EXTERNAL floating voltage supplies (FVSEL=0) Fig. 2-(b) Typical Application Circuit-2 Note: 1. High-voltage power supply pins, V PP/VNN, can draw fast transient currents up to ±1.8A. Therefore, ceramic capacitors of over 200V 0.1μF to 1μF (C1~8) should be connected as close to the pins as possible for bypassing purpose. Ceramic capacitors of over 15V 0.1 μF to 1 μF (C13~15) should also be connected close to the low- voltage power supply pins, VLL/VDD/VSS. 2. Ceramic capacitors of over 15V 1 μF to 2.2 μF (C9~12) should be connected between each floating voltage pin (VFP/VFN) and high-voltage power supply pin for bypassing pur pose. Connect those as close to the pins as possible. 3. It is also important to minimize the trace length and to have enough trace width of those high voltage and floating voltage lines. 4. The thermal tab on the bottom of the package must be soldered to the GND. 5. [PRECAUTION] External high-voltage clamp diodes between HV OUTx and V PP/VNN as shown in Fig.2-(b) are strongly recommended to mitigate excessive voltage overshoot caused by a reflection from a probe.

OCTAL ±100V 1.8A 3-L EVEL ULTRASOUND PULSER Rev.2.1_00 HDL6V5583 3. Electrical Characteristics

3.1 FVSEL=1 (EMBEDDED floating voltage supplies)

3.1.1 Clock Mode (CLKEN=0)

Table 3 DC Characteristics (Embedded FV, Clock mode) VLL=3.3V, V DD=5V, V SS=-5V, T A=25oC, 220pF//1k Ω load, CLK=100MHz, ATHP=0, unless otherwise specified. No. Items Symbol Spec Units Conditions Min Typ Max

1 Input logic high current I IH

-10 - 10 μA PINx, N INx, EN, CC1, CC0, CLK, CLKEN, FVSEL - 66 - μA ATHP 50kΩ internal pull-down resistor

2 Input logic low current I IL

-10 - 10 μA PINx, N INx, CLK, ATHP - 66 - μA EN, CC1, CC0, CLKEN, FVSEL 50kΩ internal pull-up resistor

3 Input logic capacitance C IN - 2 - pF -

4 V LL current I LLQD - 1.0 - mA Quiescent current-1 EN=1(Disable) Current mode=4 V PP/VNN=+/-100V

5 V DD current I DDQD - 14 - mA

6 V SS current I SSQD - 0.15 - mA 7 V PP current I PPQD - 0.03 - mA 8 V NN current I NNQD - 0.03 - mA 9 V LL current I LLQE - 1.1 - mA Quiescent current-2 EN=0(Enable) Current mode=4 V PP/VNN=+/-100V PINx=1, N INx=1 (x=1~8)

10 V DD current I DDQE - 18 - mA

11 V SS current I SSQE - 5.0 - mA 12 V PP current I PPQE - 0.20 - mA 13 V NN current I NNQE - 0.20 - mA 14 V LL current I LLPW - 1.1 - mA Operating current-1 8-channel active Bipolar 1-cycle f=5MHz, PRT=200 μs V PP/VNN=+/-60V EN=0, Current mode=4

15 V DD current I DDPW - 18 - mA

16 V SS current I SSPW - 7.6 - mA 17 V PP current I PPPW - 1.2 - mA 18 V NN current I NNPW - 1.8 - mA 19 V LL current I LLCW4 - 1.2 - mA Operating current-2 8-channel active Bipolar Continuous Wave Current mode=4 f=5MHz, V PP/VNN=+/-5V EN=0

20 V DD current I DDCW4 - 43 - mA

21 V SS current I SSCW4 - 33 - mA

22 V PP current I PPCW4 - 178 - mA

23 V NN current I NNCW4 - 174 - mA

24 V LL current I LLCW3 - 1.2 - mA Operating current-3 8-channel active Bipolar Continuous Wave Current mode=3 f=5MHz, V PP/VNN=+/-5V EN=0

25 V DD current I DDCW3 - 39 - mA

26 V SS current I SSCW3 - 28 - mA

27 V PP current I PPCW3 - 170 - mA

28 V NN current I NNCW3 - 166 - mA

OCTAL ±100V 1.8A 3-LEVEL ULTRASOUND PULSER HDL6V5583 Rev.2.1_00 Table 3 DC Characteristics (Emb edded FV, Clock mode; cont.) No. Items Symbol Spec Units Conditions Min Typ Max 29 V LL current I LLCW2 - 1.2 - mA Operating current-4 8-channel active Bipolar Continuous Wave Current mode=2 f=5MHz, V PP/VNN=+/-5V EN=0

30 V DD current I DDCW2 - 35 - mA

31 V SS current I SSCW2 - 22 - mA

32 V PP current I PPCW2 - 162 - mA

33 V NN current I NNCW2 - 158 - mA

34 V LL current I LLCW1 - 1.3 - mA Operating current-5 8-channel active Bipolar Continuous Wave Current mode=1 f=5MHz, V PP/VNN=+/-5V EN=0

35 V DD current I DDCW1 - 31 - mA

36 V SS current I SSCW1 - 17 - mA

37 V PP current I PPCW1 - 148 - mA

38 V NN current I NNCW1 - 146 - mA

Table 4 AC Characteristics (Embedded FV, Clock mode) VLL=3.3V, VDD=5V, VSS=-5V, TA=25oC, 220pF//1kΩ load, CLK=100MHz, EN=0, ATHP=0, 8-channel active, unless otherwise specified. No. Items Symbol Spec Units Conditions Min Typ Max 1 Input clock frequency f CLK - 100 - MHz See Fig.6 D=τ/T 2 Duty cycle D 40 50 60 % 3 Setup time t SU -0.2 - - ns 4 Hold time t HOLD 3.4 - - ns

5 Delay time on outputs rise t dr(on) - 53 - ns Bipolar half cycle

f=5MHz, PRT=200 μs VPP/VNN=+/-60V Current mode=4 See Fig.3

6 Delay time on outputs fall t df(on) - 53 - ns

7 Delay time off outputs rise t dr(off) - 53 - ns

8 Delay time off outputs fall t df(off) - 53 - ns

9 |t dr(on)-tdf(on)| Delay time matching Δtdelay(on) - ±1 ±3 ns 10 |t dr(off)-tdf(off)| Delay time matching Δtdelay(off) - ±1 ±3 ns

11 Output frequency range f OUT - - 20 MHz Bipolar 2-cycle

f=5MHz, PRT=200 μs VPP/VNN=+/-60V Current mode=4 See Fig.4

12 Output rise time t r - 18 - ns

13 Output fall time t f - 18 - ns

14 Second harmonic distortion HD2 - -40 - dBc

15 Delay jitter on rise or fall t Jr, t Jf - 20 - ps

Bipolar CW, f=5MHz VPP/VNN=+/-5V, Current mode=1 See Fig.5

16 Enable time t EN - 57 - ns EN fall edge to output burst

17 Disable time t DIS - 83 - ns EN rise edge to output HiZ

18 Clock Enable time t CLKEN - 57 - ns CLKEN fall edge to output burst

19 Clock Disable time t CLKDIS - 83 - ns CLKEN rise edge to output HiZ

OCTAL ±100V 1.8A 3-L EVEL ULTRASOUND PULSER Rev.2.1_00 HDL6V5583 Thermal Protection Characteristics Table 5 Thermal Protection Characteristics No. Items Symbol Spec Units Conditions Min Typ Max 1 THP pull-up voltage V PUTHP - - 5.25 V Open drain 2 THP output current I THP - 1.0 - mA - 3 THP output low voltage V OLTHP - - 1.0 V V LL=3.3V, I THP=1mA

4 THP temperature threshold T THP 90 110 130 ºC

5 THP reset hysteresis T HYSTHP - 10 - ºC

Table 6 Output P-Channel MOSFET (Px) Characteristics TA=25oC No. Items Symbol Spec Units Conditions Min Typ Max 1 Output saturation current I OUTP - -1.8 - A Vgs=-5V, Vds=-100V 2 Channel resistance R ONP - 7 - Ω Vgs=-5V, Id=-0.5A

3 Output capacitance C OSSP - 27 - pF Vgs=0V, Vds=-10V, f=1MHz

Note: These items above are not tested when shipped. Table 7 Output N-Channel MOSFET (Nx) Characteristics TA=25oC No. Items Symbol Spec Units Conditions Min Typ Max 1 Output saturation current I OUTN - 1.8 - A Vgs=5V, Vds=100V 2 Channel resistance R ONN - 7 - Ω Vgs=5V, Id=0.5A

3 Output capacitance C OSSN - 11 - pF Vgs=0V, Vds=10V, f=1MHz

Note: These items above are not tested when shipped. Table 8 Output GND-Clamp P-Channel MOSFET (Px G) Characteristics TA=25oC No. Items Symbol Spec Units Conditions Min Typ Max 1 Output saturation current I OUTPG - -1.0 - A Vgs=-5V, Vds=-100V 2 Channel resistance R ONPG - 13 - Ω Vgs=-5V, Id=-0.1A

3 Output capacitance C OSSPG - 15 - pF Vgs=0V, Vds=-10V, f=1MHz

Note: These items above are not tested when shipped. Table 9 Output GND-Clam p N-Channel MOSFET (Nx G) Characteristics TA=25oC No. Items Symbol Spec Units Conditions Min Typ Max 1 Output saturation current I OUTNG - 1.0 - A Vgs=5V, Vds=100V 2 Channel resistance R ONNG - 13 - Ω Vgs=5V, Id=0.1A

3 Output capacitance C OSSNG - 6 - pF Vgs=0V, Vds=10V, f=1MHz

Note: These items above are not tested when shipped.

OCTAL ±100V 1.8A 3-LEVEL ULTRASOUND PULSER HDL6V5583 Rev.2.1_00 Table 10 Output GND-Clamp Analog Switch (ASWx) Characteristics TA=25oC No. Items Symbol Spec Units Conditions Min Typ Max 1 On-state resistance R ONASW - 500 - Ω Vgs=5V, Id=0.01A Note: These items above are not tested when shipped. Table 11 Output Blocking HV Diode Characteristics TA=25oC No. Items Symbol Spec Units Conditions Min Typ Max 1 Forward voltage V FDHV - 1.0 - V I F=100mA

2 Reverse voltage V RDHV 200 - - V I R=1μA

Note: These items above are not tested when shipped. Table 12 Output Noise-Cut LV Diode Characteristics TA=25oC No. Items Symbol Spec Units Conditions Min Typ Max 1 Forward voltage V FDLV - 0.85 - V I F=100mA Note: These items above are not tested when shipped.

OCTAL ±100V 1.8A 3-L EVEL ULTRASOUND PULSER Rev.2.1_00 HDL6V5583

3.1.2 Transparent Mode (CLKEN=1)

Table 13 DC Characteristics (E mbedded FV, Transparent mode) VLL=3.3V, V DD=5V, V SS=-5V, T A=25oC, 220pF//1k Ω load, CLK=0, ATHP=0, unless otherwise specified. No. Items Symbol Spec Units Conditions Min Typ Max -10 - 10 μA PINx, N INx, EN, CC1, CC0, CLK, CLKEN, FVSEL - 66 - μA ATHP 50kΩ internal pull-down resistor -10 - 10 μA PINx, N INx, CLK, ATHP - 66 - μA EN, CC1, CC0, CLKEN, FVSEL 50kΩ internal pull-up resistor 4 V LL current I LLQD - 0.5 - μA Quiescent current-1 EN=1(Disable) Current mode=4 V PP/VNN=+/-100V 5 V DD current I DDQD - 1.1 - mA 6 V SS current I SSQD - 0.10 - mA 7 V PP current I PPQD - 0.03 - mA 8 V NN current I NNQD - 0.03 - mA

9 V LL current I LLQE - 66 - μA Quiescent current-2

EN=0(Enable) Current mode=4 V PP/VNN=+/-100V PINx=1, N INx=1 (x=1~8) 10 V DD current I DDQE - 5.5 - mA 11 V SS current I SSQE - 5.0 - mA 12 V PP current I PPQE - 0.15 - mA 13 V NN current I NNQE - 0.15 - mA

14 V LL current I LLPW - 75 - μA Operating current-1

f=5MHz, PRT=200 μs V PP/VNN=+/-60V EN=0, Current mode=4 15 V DD current I DDPW - 5.6 - mA 16 V SS current I SSPW - 5.1 - mA 17 V PP current I PPPW - 1.2 - mA 18 V NN current I NNPW - 1.8 - mA 19 V LL current I LLCW4 - 0.60 - mA Operating current-2 8-channel active Bipolar Continuous Wave Current mode=4 f=5MHz, V PP/VNN=+/-5V EN=0

20 V DD current I DDCW4 - 32 - mA

21 V SS current I SSCW4 - 34 - mA

24 V LL current I LLCW3 - 0.65 - mA Operating current-3 8-channel active Bipolar Continuous Wave Current mode=3 f=5MHz, V PP/VNN=+/-5V EN=0

25 V DD current I DDCW3 - 28 - mA

OCTAL ±100V 1.8A 3-LEVEL ULTRASOUND PULSER HDL6V5583 Rev.2.1_00 Table 13 DC Characteristics (Embed ded FV, Transparent mode; cont.) No. Items Symbol Spec Units Conditions Min Typ Max 29 V LL current I LLCW2 - 0.65 - mA Operating current-4 8-channel active Bipolar Continuous Wave Current mode=2 f=5MHz, V PP/VNN=+/-5V EN=0

30 V DD current I DDCW2 - 24 - mA

34 V LL current I LLCW1 - 0.70 - mA Operating current-5 8-channel active Bipolar Continuous Wave Current mode=1 f=5MHz, V PP/VNN=+/-5V EN=0

35 V DD current I DDCW1 - 20 - mA

Table 14 AC Characteristics (Embedded FV, Transparent mode) VLL=3.3V, VDD=5V, VSS=-5V, TA=25oC, 220pF//1kΩ load, CLK=0, EN=0, ATHP=0, 8-channel active, unless otherwise specified. No. Items Symbol Spec Units Conditions Min Typ Max

1 Delay time on outputs rise t dr(on) - 48 - ns Bipolar half cycle

f=5MHz, PRT=200 μs VPP/VNN=+/-60V Current mode=4 See Fig.3

2 Delay time on outputs fall t df(on) - 48 - ns

3 Delay time off outputs rise t dr(off) - 48 - ns

4 Delay time off outputs fall t df(off) - 48 - ns

5 |t dr(on)-tdf(on)| Delay time matching Δtdelay(on) - ±1 ±3 ns 6 |t dr(off)-tdf(off)| Delay time matching Δtdelay(off) - ±1 ±3 ns

7 Output frequency range f OUT - - 20 MHz Bipolar 2-cycle

f=5MHz, PRT=200 μs VPP/VNN=+/-60V Current mode=4 See Fig.4

8 Output rise time t r - 18 - ns

9 Output fall time t f - 18 - ns

10 Second harmonic distortion HD2 - -40 - dBc

11 Delay jitter on rise or fall t Jr, t Jf - 20 - ps

Bipolar CW, f=5MHz VPP/VNN=+/-5V, Current mode=1 See Fig.5

12 Enable time t EN - 52 - ns EN fall edge to output burst

13 Disable time t DIS - 78 - ns EN rise edge to output HiZ

See Table 5 through 12 for the characterist ics of Thermal Protection, and Devices.

OCTAL ±100V 1.8A 3-L EVEL ULTRASOUND PULSER Rev.2.1_00 HDL6V5583

3.2 FVSEL=0 (EXTERNAL floating voltage supplies)

3.2.1 Clock Mode (CLKEN=0)

Table 15 DC Characteristics (External FV, Clock mode) VLL=3.3V, VDD=5V, VSS=-5V, VFP=VPP-5V, VFN=VNN+5V, TA=25oC, 220pF//1kΩ load, CLK=100MHz, ATHP=0, unless otherwise specified. No. Items Symbol Spec Units Conditions Min Typ Max -10 - 10 μA PINx, N INx, EN, CC1, CC0, CLK, CLKEN, FVSEL - 66 - μA ATHP 50kΩ internal pull-down resistor -10 - 10 μA PINx, N INx, CLK, ATHP - 66 - μA EN, CC1, CC0, CLKEN, FVSEL 50kΩ internal pull-up resistor 4 V LL current I LLQD - 1.0 - mA Quiescent current-1 EN=1(Disable) Current mode=4 V PP/VNN=+/-100V 6 V SS current I SSQD - 0.1 - mA

7 V PP current I PPQD - 0 - mA

8 V NN current I NNQD - 0 - mA

9 V FP current I FPQD - 0.02 - mA 10 V FN current I FNQD - 0.02 - mA 11 V LL current I LLQE - 1.1 - mA Quiescent current-2 EN=0(Enable) Current mode=4 V PP/VNN=+/-100V PINx=1, N INx=1 (x=1~8)

12 V DD current I DDQE - 18 - mA

13 V SS current I SSQE - 5.0 - mA

14 V PP current I PPQE - 0 - mA

15 V NN current I NNQE - 0 - mA

16 V FP current I FPQE - 0.02 - mA 17 V FN current I FNQE - 0.02 - mA 18 V LL current I LLPW - 1.1 - mA Operating current-1 8-channel active Bipolar 1-cycle f=5MHz, PRT=200 μs V PP/VNN=+/-60V EN=0, Current mode=4

19 V DD current I DDPW - 18 - mA

20 V SS current I SSPW - 5.1 - mA 21 V PP current I PPPW - 2.0 - mA 22 V NN current I NNPW - 2.0 - mA 23 V FP current I FPPW - 0.20 - mA 24 V FN current I FNPW - 0.20 - mA

OCTAL ±100V 1.8A 3-LEVEL ULTRASOUND PULSER HDL6V5583 Rev.2.1_00 Table 15 DC Characteristics (Ext ernal FV, Clock mode; cont.) No. Items Symbol Spec Units Conditions Min Typ Max 25 V LL current I LLCW4 - 1.2 - mA Operating current-2 8-channel active Bipolar Continuous Wave Current mode=4 f=5MHz, V PP/VNN=+/-5V EN=0

26 V DD current I DDCW4 - 24 - mA

27 V SS current I SSCW4 - 8.0 - mA

28 V PP current I PPCW4 - 160 - mA

29 V NN current I NNCW4 - 160 - mA

30 V FP current I FPCW4 - 31 - mA

31 V FN current I FNCW4 - 20 - mA

32 V LL current I LLCW3 - 1.2 - mA Operating current-3 8-channel active Bipolar Continuous Wave Current mode=3 f=5MHz, V PP/VNN=+/-5V EN=0

33 V DD current I DDCW3 - 24 - mA

34 V SS current I SSCW3 - 8.0 - mA

35 V PP current I PPCW3 - 156 - mA

36 V NN current I NNCW3 - 156 - mA

37 V FP current I FPCW3 - 22 - mA

38 V FN current I FNCW3 - 15 - mA

39 V LL current I LLCW2 - 1.2 - mA Operating current-4 8-channel active Bipolar Continuous Wave Current mode=2 f=5MHz, V PP/VNN=+/-5V EN=0

40 V DD current I DDCW2 - 24 - mA

41 V SS current I SSCW2 - 8.0 - mA

42 V PP current I PPCW2 - 148 - mA

43 V NN current I NNCW2 - 148 - mA

44 V FP current I FPCW2 - 16 - mA

45 V FN current I FNCW2 - 11 - mA

46 V LL current I LLCW1 - 1.3 - mA Operating current-5 8-channel active Bipolar Continuous Wave Current mode=1 f=5MHz, V PP/VNN=+/-5V EN=0

47 V DD current I DDCW1 - 24 - mA

48 V SS current I SSCW1 - 8.0 - mA

49 V PP current I PPCW1 - 136 - mA

50 V NN current I NNCW1 - 136 - mA

51 V FP current I FPCW1 - 8.0 - mA 52 V FN current I FNCW1 - 6.0 - mA

OCTAL ±100V 1.8A 3-L EVEL ULTRASOUND PULSER Rev.2.1_00 HDL6V5583 AC Characteristics Table 16 AC Characteristics (External FV, Clock mode) VLL=3.3V, VDD=5V, VSS=-5V, VFP=VPP-5V, VFN=VNN+5V, TA=25oC, 220pF//1kΩ load, CLK=100MHz, EN=0, ATHP=0, 8-channel active, unless otherwise specified. No. Items Symbol Spec Units Conditions Min Typ Max 1 Input clock frequency f CLK - 100 - MHz See Fig.6 D=τ/T 2 Duty cycle D 40 50 60 % 3 Setup time t SU -0.2 - - ns 4 Hold time t HOLD 3.4 - - ns f=5MHz, PRT=200 μs VPP/VNN=+/-60V Current mode=4 See Fig.3 9 |t dr(on)-tdf(on)| Delay time matching Δtdelay(on) - ±1 ±3 ns 10 |t dr(off)-tdf(off)| Delay time matching Δtdelay(off) - ±1 ±3 ns f=5MHz, PRT=200 μs VPP/VNN=+/-60V Current mode=4 See Fig.4 Bipolar CW, f=5MHz VPP/VNN=+/-5V, Current mode=1 See Fig.5 See Table 5 through 12 for the characterist ics of Thermal Protection, and Devices.

OCTAL ±100V 1.8A 3-LEVEL ULTRASOUND PULSER HDL6V5583 Rev.2.1_00

3.2.2 Transparent Mode (CLKEN=1)

Table 17 DC Characteristics (E xternal FV, Transparent mode) VLL=3.3V, VDD=5V, VSS=-5V, VFP=VPP-5V, VFN=VNN+5V, TA=25oC, 220pF//1kΩ load, CLK=0, ATHP=0, unless otherwise specified. No. Items Symbol Spec Units Conditions Min Typ Max -10 - 10 μA PINx, N INx, EN, CC1, CC0, CLK, CLKEN, FVSEL - 66 - μA ATHP 50kΩ internal pull-down resistor -10 - 10 μA PINx, N INx, CLK, ATHP - 66 - μA EN, CC1, CC0, CLKEN, FVSEL 50kΩ internal pull-up resistor

4 V LL current I LLQD - 66 - μA Quiescent current-1

EN=1(Disable) Current mode=4 V PP/VNN=+/-100V 5 V DD current I DDQD - 1.1 - mA 6 V SS current I SSQD - 0.10 - mA 9 V FP current I FPQD - 0.02 - mA 10 V FN current I FNQD - 0.02 - mA

11 V LL current I LLQE - 134 - μA Quiescent current-2

EN=0(Enable) Current mode=4 V PP/VNN=+/-100V PINx=1, N INx=1 (x=1~8) 12 V DD current I DDQE - 5.5 - mA 13 V SS current I SSQE - 5.0 - mA 16 V FP current I FPQE - 0.02 - mA 17 V FN current I FNQE - 0.02 - mA

18 V LL current I LLPW - 142 - μA Operating current-1

f=5MHz, PRT=200 μs V PP/VNN=+/-60V EN=0, Current mode=4 19 V DD current I DDPW - 5.6 - mA 20 V SS current I SSPW - 5.1 - mA 21 V PP current I PPPW - 2.0 - mA 22 V NN current I NNPW - 2.0 - mA 23 V FP current I FPPW - 0.20 - mA 24 V FN current I FNPW - 0.20 - mA

OCTAL ±100V 1.8A 3-L EVEL ULTRASOUND PULSER Rev.2.1_00 HDL6V5583 Table 17 DC Characteristics (Exter nal FV, Transparent mode; cont.) No. Items Symbol Spec Units Conditions Min Typ Max 25 V LL current I LLCW4 - 0.60 - mA Operating current-2 8-channel active Bipolar Continuous Wave Current mode=4 f=5MHz, V PP/VNN=+/-5V EN=0

26 V DD current I DDCW4 - 13 - mA

27 V SS current I SSCW4 - 8.0 - mA 32 V LL current I LLCW3 - 0.65 - mA Operating current-3 8-channel active Bipolar Continuous Wave Current mode=3 f=5MHz, V PP/VNN=+/-5V EN=0

33 V DD current I DDCW3 - 13 - mA

34 V SS current I SSCW3 - 8.0 - mA 39 V LL current I LLCW2 - 0.65 - mA Operating current-4 8-channel active Bipolar Continuous Wave Current mode=2 f=5MHz, V PP/VNN=+/-5V EN=0

40 V DD current I DDCW2 - 13 - mA

41 V SS current I SSCW2 - 8.0 - mA 46 V LL current I LLCW1 - 0.70 - mA Operating current-5 8-channel active Bipolar Continuous Wave Current mode=1 f=5MHz, V PP/VNN=+/-5V EN=0

47 V DD current I DDCW1 - 13 - mA

48 V SS current I SSCW1 - 8 - mA

51 V FP current I FPCW1 - 8.0 - mA 52 V FN current I FNCW1 - 6.0 - mA

OCTAL ±100V 1.8A 3-LEVEL ULTRASOUND PULSER HDL6V5583 Rev.2.1_00 AC Characteristics Table 18 AC Characteristics (E xternal FV, Transparent mode) VLL=3.3V, VDD=5V, VSS=-5V, VFP=VPP-5V, VFN=VNN+5V, TA=25oC, 220pF//1kΩ load, CLK=0, EN=0, ATHP=0, 8-channel active, unless otherwise specified. No. Items Symbol Spec Units Conditions Min Typ Max f=5MHz, PRT=200 μs VPP/VNN=+/-60V Current mode=4 See Fig.3 5 |t dr(on)-tdf(on)| Delay time matching Δtdelay(on) - ±1 ±3 ns 6 |t dr(off)-tdf(off)| Delay time matching Δtdelay(off) - ±1 ±3 ns f=5MHz, PRT=200 μs VPP/VNN=+/-60V Current mode=4 See Fig.4 Bipolar CW, f=5MHz VPP/VNN=+/-5V, Current mode=1 See Fig.5 See Table 5 through 12 for the characterist ics of Thermal Protection, and Devices.

OCTAL ±100V 1.8A 3-L EVEL ULTRASOUND PULSER Rev.2.1_00 HDL6V5583 4. Switching Time Diagram (EN=0) Fig. 4 Propagation delay time Fig. 5 Output rise/fall time Fig. 6 Delay jitter on rise/fall PINx VLL GND NINx VLL GND HVOUTx VPP1 GND tdr(on) tdr(of f ) VNN1 10% 10% 50% 50% 90% td f( o ff) tdf (on) PRT PINx VLL GND NINx VLL GND HVOUTx VPP1 GND trtf VNN1 80% 80% 80% 80% PINx VLL GND NINx VLL GND HVOUTx GND VPP1 VNN1 tdr 50% 50% tJr=Δtdr(1σ) tdf 50% 50% tJf =Δtdf (1σ) 50% 50% Clock mode (CLKEN=0) Transparent mode (CLKEN=1) Fig. 3 Setup/hold time

OCTAL ±100V 1.8A 3-LEVEL ULTRASOUND PULSER HDL6V5583 Rev.2.1_00 5. Truth Table Table 19 Truth Table Note:  x=1~8  V PP / VNN = +/-HV  2-input / channel 6. Drive Current Mode Control Table 20 Drive Current Mode Control Table Note: *1) Output saturation current @ |Vds|=100V Recommended current mode is as follows:  Current mode=4 for high-voltage, short pulse train operations  Current mode=1~3 for low-voltage, long puls e train or continuous wave operations EN P INxN INxP x N xP x G NxG ASWx HV OUTx +HV -HV GND GND GND 0 0 0 OFF OFF OFF OFF OFF HiZ

001 O F F ON OFF OFF OFF -HV

010 ON OFF OFF OFF OFF +HV

011 O F F O F F ON ON ON GND

1 X X OFF OFF OFF OFF OFF HiZ

Logic Inputs HV MOSFET status Output |IOUT| [A] *1 Current Mode CC1 CC0 Px Nx 10 0 0 . 4 5 0 . 4 5 20 1 0 . 9 0 . 9 31 0 1 . 3 5 1 . 3 5 41 1 1 . 8 1 . 8

OCTAL ±100V 1.8A 3-L EVEL ULTRASOUND PULSER Rev.2.1_00 HDL6V5583 7. Pin Configuration Table 21 Pin Configuration Pin# Pin Name I/O Function

1 N IN2 I Input logic control of the output of channel 2

2 P IN3 I Input logic control of the output of channel 3

3 N IN3 I Input logic control of the output of channel 3

4 P IN4 I Input logic control of the output of channel 4

5 N IN4 I Input logic control of the output of channel 4

6 V LL - Positive voltage supply of low voltage interface (+1.8~5V)

7 CLK I Clock Input (100MHz)

8 GND - Drive power ground (0V)

9 P IN5 I Input logic control of the output of channel 5

10 N IN5 I Input logic control of the output of channel 5

11 P IN6 I Input logic control of the output of channel 6

12 N IN6 I Input logic control of the output of channel 6

13 P IN7 I Input logic control of the output of channel 7

14 N IN7 I Input logic control of the output of channel 7

15 P IN8 I Input logic control of the output of channel 8

16 N IN8 I Input logic control of the output of channel 8

17 EN I Control of drive output enable, 1=off, 0=on (50kΩ pull-up resistor embedded)

18 CLKEN I Control of clock enable, 1=clock disable, 0=clock enable (50kΩ pull-up resistor embedded)

19 NC - No connection.

20 ATHP I Control of active THP enable, 1=disable, 0=enable (50kΩ pull-down resistor embedded)

21 THP O Thermal protection output, open N-MOS drain

22 V SS - Negative low voltage power supply (-5V)

23 V FP - Built-in floating gate drive power supply for HV P-MOS @FVSEL=1

External floating gate drive power supply for HV P-MOS @FVSEL=0 (VPP-5V)

24 V FN - Built-in floating gate drive power supply for HV N-MOS @FVSEL=1

External floating gate drive power supply for HV N-MOS @FVSEL=0 (VNN+5V)

25 V NN - Negative high voltage power supply (-100 to 0V)

26 HV OUT8 O High voltage output of channel 8

OCTAL ±100V 1.8A 3-LEVEL ULTRASOUND PULSER HDL6V5583 Rev.2.1_00 Table 21 Pin Configuration (cont.) Pin# Pin Name I/O Function

27 V PP - Positive high voltage power supply (0 to +100V)

28 HV OUT7 O High voltage output of channel 7

29 V NN - Negative high voltage power supply (-100 to 0V)

30 HV OUT6 O High voltage output of channel 6

31 V PP - Positive high voltage power supply (0 to +100V)

32 HV OUT5 O High voltage output of channel 5

33 GND - Drive power ground (0V)

34 HV OUT4 O High voltage output of channel 4

35 V PP - Positive high voltage power supply (0 to +100V)

36 HV OUT3 O High voltage output of channel 3

37 V NN - Negative high voltage power supply (-100 to 0V)

38 HV OUT2 O High voltage output of channel 2

39 V PP - Positive high voltage power supply (0 to +100V)

40 HV OUT1 O High voltage output of channel 1

41 V NN - Negative high voltage power supply (-100 to 0V)

42 V FN - Built-in floating gate drive power supply for HV N-MOS @FVSEL=1

External floating gate drive power supply for HV N-MOS @FVSEL=0 (VNN+5V)

43 V FP - Built-in floating gate drive power supply for HV P-MOS @FVSEL=1

External floating gate drive power supply for HV P-MOS @FVSEL=0 (VPP-5V)

44 V DD - Positive low voltage power supply (+5V)

45 CC0 I Control of the least significant bit for drive current mode (50kΩ pull-up resistor embedded)

46 CC1 I Control of the most significant bit for drive current mode (50kΩ pull-up resistor embedded)

47 FVSEL I Control of floating gate drive power supply, 1=built-in, 0=external (50kΩ pull-up resistor

embedded)

48 GND - Drive power ground (0V)

49 GND - Drive power ground (0V)

50 P IN1 I Input logic control of the output of channel 1

51 N IN1 I Input logic control of the output of channel 1

52 P IN2 I Input logic control of the output of channel 2

OCTAL ±100V 1.8A 3-LEVEL ULTRASOUND PULSER HDL6V5583 Rev.2.1_00  Important Notice 1. ABLIC Inc. warrants performance of it s hardware products (hereinafter calle d “products”) to the specifications applicable at the time of sale in accordance with t he Product Specification. Test ing and other quality control techniques are utilized to the extent ABLIC Inc. needs to meet specifications described in the Product Specification. Specific te sting of all parameters of each device is not necessarily performed, except those mandated by related laws and/or regulations. 2. Should any claim be made within one month of produc t delivery about products’ failure to meet performance described in the Product Specification, all the products in relevant lot( s) shall be re-tested and re-delivered. Products delivered more than one month before such claim shall not be counted for such response. 3. ABLIC Inc. assumes no obligation or any way of comp ensation should any fault about customer products and applications using ABLIC Inc. products be found in marketplace. Only in such a case fault of ABLIC Inc. is evident and products concerned do not meet the Product Specification, compensation shall be conducted if claimed within one year of product delivery up to in the way of product replacement or payment of equivalent amount. 4. ABLIC Inc. reserves the ri ght to make changes to the Product Specification at any time and to discontinue mass production of the relevant products without notice. Customers are advised bef ore placing orders to confirm that the Product Specification of inquiry is the latest version and that the rele vant product is currently on mass production status. 5. In no event shall ABLIC Inc. be liable for any damage that may result from an accident or any other cause during operation of the user’s units according to the Product Specification. ABLIC Inc. assumes no responsibility for any intellectual property claims or any ot her problems that may result from app lications of information, products or circuits described in the Product Specification. 6. No license is granted by the Product S pecification under any patent s or other rights of any third party or ABLIC Inc. 7. The Product Specification may not be reproduced or duplicated, in any form, in whole or in part, without the expressed written permission of ABLIC Inc. 8. Resale of ABLIC Inc. products with statements different from or beyond the parameters described in the Product Specification voids all express and any implied warrant ies for the products, and is an unfair and deceptive business practice. ABLIC Inc. is not responsible or liable for any such statements. 9. Products (technologies) described in the Product Specification are not to be provided to any party whose purpose in their application will hinder maintenance of in ternational peace and safety nor are they to be applied to that purpose by their direct purch asers or any third party. When exporti ng those products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.

OCTAL ±100V 1.8A 3-L EVEL ULTRASOUND PULSER Rev.2.1_00 HDL6V5583  Cautions 1. Customers are advised to follow the cautions below to pr otect products from damage caused by electrical static discharge (ESD). 1. 1 Material of container or any device to carry pr oducts should be free from ESD, which may be caused by vibration while transportation. It is recommended that electric-conductive container or aluminum sheet be used as an effective countermeasure. 1. 2 Those that touch products, such as work platform, machine, or m easurement/test equipment, should be grounded. 1. 3 Those who deal with products should be groun ded through a large series impedance around 100k Ω to 1MΩ. 1. 4 Prevent friction with other materials made with high polymer. 1. 5 Prevent vibration or friction when carrying the printe d circuit board (PCB) where products are mounted. To short circuit terminals is a recommended countermeasure to keep the same electric potential on the PCB. 1. 6 Avoid dealing with or storing produc ts in an extremely arid environment. 2. “Absolute maximum ratings” should never be exceed ed during use regardless of any change in external conditions. Otherwise, products may be damaged or destro yed. In no event shall ABLIC Inc. be liable for any failure in products or any secondary damage resulting from use at a value exceeding the absolute maximum ratings. 3. Products may experience failures due to accident or unex pected surge voltages. Accordingly, adopt safe design features, such as redundancy or prev ention of erroneous action, to avoi d extensive damage in the event of a failure. (If a semiconductor device fails, there may be ca ses in which the semiconductor device, wiring or wiring pattern will emit smoke or cause a fire or in which the semiconductor device will burst.) 4. Products may experience failures or malfunction in poor surroundings, such as electrical leakage in products due to long-term use in high humidity, malfunctioning or permanent damage due to chemical reaction of products in corrosive environment or due to dischar ge by strongly charged object near products or due to excessive mechanical shock. To use products in radi ation environment is not assu med. To use products near material easy to ignite may cause a fire due to its flammable package. Avoid using products in such environment or take appropriate countermeasures depending on the environment. 5. Products are not designed, manufactured, or warranted to be suitable for use where extremely high reliability is required (such as use in nuclear pow er control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment). Inclusion of products in such application shall be fully at the risk of customers. ABLIC Inc. assumes no liability for applications assistance, customer product design, or performance.

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Disclaimers (Handling Precautions) 1. All the information described herein (product data, specific ations, figures, tables, programs, algorithms and application circuit examples, et c.) is current as of publishing date of this document and is subject to change without notice. 2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of any specific mass-production design. ABLIC Inc. is not liable for any losses, damages, claims or dem ands caused by the reasons other than the products described herein (hereinafter "the products") or infringement o f third-party intellectual property right and any other right due to the use of the information described herein. 3. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the incorrect information described herein. 4. Be careful to use the products within their ranges described herein. Pay special attention for use to the absolute maximum ratings, operation voltage range and electrical characteristics, etc. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by failures and / or accidents, etc. due to the use of the products outside their specified ranges. 5. Before using the products, co nfirm their applications, and the laws and regulations of the region or country where they are used and verify suitability, safety and other factors for the intended use. 6. When exporting the products, comply with the Foreign Exchang e and Foreign Trade Act and all other export-related laws, and follow the required procedures. 7. The products are strictly prohibited from using, providing o r exporting for the purposes of the development of weapons of mass destruction or military use. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by any provision or export to the person or entity who i ntends to develop, manufacture, use or store nuclear, biological or chemical weapons or missiles, or use any other military purposes. 8. The products are not designed to be used as part of any devi ce or equipment that may affect the human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses by ABLIC, Inc. Do not apply the products to the above listed devices and equipments. ABLIC Inc. is not liable for any losses, damages, claims or dem ands caused by unauthorized or unspecified use of the products. 9. In general, semiconductor products may fail or malfunction w ith some probability. The user of the products should therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread prevention measures, and malfunction prevention to prevent acci dents causing injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction. The entire system in which the products are used must be sufficiently evaluated and judged whether the products are allowed to apply for the system on customer's own responsibility. 10. The products are not designed to be radiation-proof. The ne cessary radiation measures should be taken in the product design by the customer depending on the intended use. 11. The products do not affect human health under normal use. H owever, they contain chemical substances and heavy metals and should therefore not be put in the mouth. The fractu re surfaces of wafers and chips may be sharp. Be careful when handling these with the bare hands to prevent injuries, etc. 12. When disposing of t he products, comply with the laws and ordinances of the country or region where they are used. 13. The information described herein contains copyright informa tion and know-how of ABL IC Inc. The information described herein does not convey any license under any intellec tual property rights or any other rights belonging to ABLIC Inc. or a third party. Reproduction or copying of the inf ormation from this document or any part of this document described herein for the purpose of disclosing it to a third-party is strictly prohibited without the express permission of ABLIC Inc. 14. For more details on the information described herein or any other questions, please contact ABLIC Inc.'s sales representative. 15. This Disclaimers have been delivered in a text using the Ja panese language, which text, despite any translations into the English language and the Chinese language, shall be controlling. 2.4-2019.07 www.ablic.com