GMM3X100-01X1 IXYS | Alldatasheet

Document overview

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Technical content

Features

  • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode
  • package: - high level of integration - high current capability - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer
  • Space and weight savings Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. RDSon 1) on chip level at TVJ = 25°C VGS = 10 V TVJ = 125°C 7.5 8.5 mW mW VGS(th) VDS = 20 V; ID = 1 mA 2.5 4.5 V IDSS VDS = VDSS; VGS = 0 V TVJ = 25°C TVJ = 125°C 0.1 1 µA mA IGSS VGS = ± 20 V; VDS = 0 V 0.2 µA Qg Qgs Qgd VGS = 10 V; VDS = 65 V; ID = 90 A nC nC nC t d(on) tr td(off) tf inductive load V GS = 10 V; VDS = 48 V ID = 70 A; RG = 33 Ω; TJ = 125°C 130 290 ns ns ns ns E on Eoff Erecoff 0.4 0.4 0.007 mJ mJ mJ R thJC RthJH with heat transfer paste (IXYS test setup) 1.3 1.0 1.6 K/W K/W 1) VDS = ID·(RDS(on) + 2RPin to Chip) MOSFETs Symbol Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C 100 V VGS ± 20 V ID25 ID90 TC = 25°C TC = 90°C A A I F25 IF90 TC = 25°C (diode) TC = 90°C (diode) A A L3+ L2L1 L1+ L2+ L3-L1- L2-

© 2011 IXYS All rights reserved 2 - 3 20110307 GMM 3x100-01X1 IXYS reserves the right to change limits, test conditions and dimensions. t e n t a t i v e Component Symbol Conditions Maximum Ratings IRMS per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections 2 pins for output L1, L2, L3 75 A T J Tstg -55...+175 -55...+125 V ISOL IISOL < 1 mA, 50/60 Hz, f = 1 minute 1000 V~ FC mounting force with clip 50 - 250 N Symbol Conditions Characteristic Values min. typ. max. Rpin to chip 1) tbd mW CP coupling capacity between shorted pins and back side metallization 160 pF Weight 25 g 1) VDS = ID·(RDS(on) + 2RPin to Chip) Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VSD (diode) IF = 70 A; VGS = 0 V 0.9 1.2 V trr QRM IRM IF = 70 A; -diF/dt = 800 A/µs; VR = 48 V 0.95 ns µC A

© 2011 IXYS All rights reserved 3 - 3 20110307 GMM 3x100-01X1 IXYS reserves the right to change limits, test conditions and dimensions. Leads Ordering Part Name & Packing Unit Marking Part Marking Delivering Mode Base Qty. Ordering Code SMD Standard GMM 3x100-01X1 - SMD GMM 3x100-01X1 Blister 28 509 035 t e n t a t i v e