GBO25-12NO1 IXYS | Alldatasheet

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Technical content

1~ Rectifier Bridge Standard Rectifier - ~ +~ Part number GBO25-12NO1 Backside: isolated Features / Advantages: Applications: Package:

  • Low forward voltage drop
  • Planar passivated chips
  • Easy to mount with one screw
  • Space and weight savings
  • Supplies for DC power equipment
  • Input rectifiers for PWM inverter
  • Battery DC power supplies
  • Field supply for DC motors GBFP
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • Soldering pins for PCB mounting
  • Base plate: Plastic overmolded tab
  • Reduced weight
  • Isolation Voltage: V~2500 RRM 1200 I2 5 FSM 370 DAV V = V A A Rectifier IXYS reserves the right to change limits, conditions and dimensions. 20130527bData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

V = V A²s A²s A²s A²s Symbol Definition Ratings typ. max. IR V I A VF 1.06 R 4.3 K/W R min. VRSM V 40T = 25°CVJ T = °CVJ mA1.5V = VR T = 25°CVJI = AF V T = °CC 105 Ptot 35 WT = 25°CC R K/W 1200 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation Conditions Unit 1.17 T = 25°CVJ 150 VF0 V0.74T = °CVJ 175 rF 16.3 mΩ V0.92T = °CVJI = AF V 1.09 I = AF 20 I = AF 20 threshold voltage slope resistance for power loss calculation only µA 150 VRRM V1200max. repetitive reverse blocking voltage T = 25°CVJ CJ 10junction capacitance V = V;400 T = 25°Cf = 1 MHzR VJ pF IFSM t = 10 ms; (50 Hz), sine T = 45°C VJmax. forward surge current T = °CVJ 150 I²t T = 45°Cvalue for fusing T = °C150 V = 0 VR V = 0 VR V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R T = °CVJ 175 370 400 495 480 A A A A 315 340 685 665 1200 DAV d =rectangular 0.5 bridge output current thermal resistance junction to casethJC thermal resistance case to heatsinkthCH Rectifier 1300 0.50 IXYS reserves the right to change limits, conditions and dimensions. 20130527bData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

RthJA thermal resistance junction to ambient K/W50 Ratings GBO 25-xxNO1 XXXX Date Code Package TVJ °C MD Nm0.8mounting torque 0.5 Tstg °C150storage temperature -55 Weight g7 Symbol Definition typ. max.min.Conditions virtual junction temperature Unit FC N120mounting force with clip 20 V Vt = 1 second Vt = 1 minute isolation voltage mm mm 4.9 2.5 d Spp/App creepage distance on surface | striking distance through air dSpb/Apb terminal to backside I RMS RMS current 70 Aper terminal 175-40 terminal to terminal GBFP Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering 50/60 Hz, RMS; I ≤ 1 mAISOL GBO25-12NO1 500233Tube 16GBO25-12NO1Standard 2080 2500ISOL threshold voltage V0.74 mΩ V0 max R0 max slope resistance * 13.7 Equivalent Circuits for Simulation T =VJ I V0 R0 Rectifier 175 °C* on die level IXYS reserves the right to change limits, conditions and dimensions. 20130527bData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

DIM. MIN. MAX. A 29.7 30.3 B 19.7 20.3 C 17.0 18.0 D4 . 7 4 . 9 E1 0 . 8 1 1 . 2 F2 . 3 2 . 7 G3 . 1 3 . 4 H3 . 4 3 . 8 I4 . 4 4 . 8 J2 . 5 2 . 9 K0 . 6 0 . 8 L2 . 0 2 . 4 M0 . 9 1 . 1 N 9.8 10.2 O7 . 3 7 . 7 P3 . 8 4 . 2 Q (3.0) x 45° R (Ø) 3.1 3.4 All Dimensions in millimeter G - ~ +~ Outlines GBFP IXYS reserves the right to change limits, conditions and dimensions. 20130527bData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

VF [V] IF [A] 0.4 0.8 1.2 1.6 10-3 10-2 10-1 100 150 200 250 300 1 10 100 1000 10000 0 2 55 07 5 1 0 0 1 2 5 1 5 0 1 7 5048 1 2 1 6 0 25 50 75 100 125 150 175 IFSM [A] t[ s ] t[ m s ] I2t [A2s] Ptot [W] IF(AV)M [A] TA [°C] IF(AV)M [A] TC [°C] ZthJC [K/W] t[ m s ] Constants for ZthJC calculation: iR th (K/W) t i (s) 1 0.302 0.002 2 1.252 0.032 3 1.582 0.227 4 1.164 0.820 0.8 x V RRM 50 Hz TVJ =4 5 ° C VR =0 V RthJA: 0.6 KW 0.8 KW 1K W 2K W 4K W 8K W DC = 0.5 0.4 0.33 0.17 0.08 TVJ = 125°C 150°C TVJ =2 5 ° C TVJ =1 5 0 ° C TVJ =1 5 0 ° C Fig. 1 Forward current vs. voltage drop per diode Fig. 2 Surge overload current vs. time per diode Fig. 3 I 2t vs. time per diode Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode Fig. 6 Transient thermal impedance junction to case vs. time per diode DC = 0.5 0.4 0.33 0.17 0.08 TVJ =4 5 ° C Rectifier IXYS reserves the right to change limits, conditions and dimensions. 20130527bData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved