FMP26-02P IXYS | Alldatasheet

Document overview

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Technical content

Features

z Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation z Avalanche rated z Low QG z Low Drain-to-Tab capacitance z Low package inductance Advantages z Low gate drive requirement z High power density z Low drain to ground capacitance z Fast switching

Applications

z Class AB audio amplifiers z Multi-phase DC to DC converters z Industrial battery chargers z Switching power supplies Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 200 V VGSS Continuous ± 20 V VGSM Transient ± 30 V ID25 TC = 25°C -17 A IDM TC = 25°C, pulse width limited by T JM - 70 A IA TC = 25°C - 26 A EAS TC = 25°C 1.5 J PD TC = 25°C 125 W P - CHANNEL Advance Technical Information Symbol Test Conditions Maximum Ratings TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C VISOLD 50/60HZ, RMS, t = 1min, leads-to-tab 2500 ~V TL 1.6mm (0.062 in.) from case for 10s 300 °C TSOLD Plastic body for 10s 260 °C P CH. N CH. VDSS - 200V 200V ID25 - 17A 26A RDS(on) 170mΩ Ω Ω Ω Ω 60mΩΩΩΩΩ trr(typ) 240ns 150nsT2 ISOPLUS i4-PakTM Isolated Tab

ΙΞΨΣ ρεσερϖεσ τηε ριγητ το χηανγε λιμιτσ, τεστ χονδιτιονσ, ανδ διμενσιονσ. FMP26-02P ISOPLUS i4-PakTM Outline Ref: IXYS CO 0077 R0 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Symbol Test Conditions 2 Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. BVDSS VGS = 0V, ID = - 250μA - 200 V VGS(th) VDS = VGS, ID = - 250μA - 2.5 - 4.5 V IGSS VGS = ±20 V, VDS = 0V ± 100 nA IDSS VDS = VDSS, VGS = 0V -10 μA TJ = 125°C - 150 μA RDS(on) VGS = -10V, ID = -13A, Note 1 170 m Ω gfs VDS = -10V, ID = -13A, Note 1 10 17 S Ciss 2740 pF Coss VGS = 0V, VDS = - 25 V, f = 1 MHz 540 pF Crss 100 pF td(on) Resistive Switching Times 18 ns tr VGS = -10V, VDS = 0.5 z VDSS, ID = -13A 33 ns td(off) RG = 3.3Ω (External) 46 ns tf 21 ns Qg(on) 56 nC Qgs VGS= -10V, VDS = 0.5 z VDSS, ID = -13A 18 nC Qgd 20 nC RthJC 1.0 °C/W RthCS 0.15 °C/W Drain-Source Diode Characteristic Values (TJ = 25°C unless otherwise specified) Symbol Test Conditions 2 Min. Typ. Max. IS VGS = 0V - 17 A ISM Repetitive, pulse width limited by T JM -104 A VSD IF = -13A, VGS = 0 V, Note 1 - 3.2 V trr IF = -13A, di/dt = 100 A/ μs 240 ns QRM VR = -100V, VGS = 0V 2.2 μ C IRM -18 A

© 2008 IXYS CORPORATION, All rights reserved FMP26-02P N - CHANNEL Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1MΩ 200 V VGSS Continuous ± 20 V VGSM Transient ± 30 V ID25 TC = 25°C 26 A IDM TC = 25°C, pulse width limited by T JM 120 A IA TC = 25°C 50 A EAS TC = 25°C 1 J PD TC = 25°C 125 W Symbol Test Conditions 2 Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. BVDSS VGS = 0V, ID = 250 μA 200 V VGS(th) VDS = VGS, ID = 250μA 2.5 5.0 V IGSS VGS = ±20 V, VDS = 0V ± 100 nA IDSS VDS = VDSS, VGS = 0V 25 μA TJ = 150°C 250 μA RDS(on) VGS = 10V, ID = 25A, (Note 1) 60 m Ω gfs VDS = 10V, ID = 25A, (Note 1) 12 23 S Ciss 2720 pF Coss VGS = 0V, VDS = 25 V, f = 1 MHz 490 pF Crss 105 pF td(on) Resistive Switching Times 26 ns tr VGS = 10V, VDS = 0.5 z VDSS, ID = 25A 35 ns td(off) RG = 10Ω (External) 70 ns tf 30 ns Qg(on) 70 nC Qgs VGS= 10V, VDS = 0.5 z VDSS, ID = 25A 17 nC Qgd 37 nC RthJC 1.0 °C/W RthCS 0.15 °C/W

ΙΞΨΣ ρεσερϖεσ τηε ριγητ το χηανγε λιμιτσ, τεστ χονδιτιονσ, ανδ διμενσιονσ. FMP26-02P ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Source-Drain Diode Characteristic Values TJ = 25°C unless otherwise specified) Symbol Test Conditions 3 Min. Typ. Max. IS VGS = 0V 26 A ISM Repetitive, pulse width limited by T JM 120 A VSD IF = 50A, VGS = 0V, Note 1 1.5 V trr IF = 25A, -di/dt = 100A/ μs 150 ns QRM VR = 100V, VGS = 0V 2.0 μ C Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.