FMM60-02TF IXYS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
z Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation z Avalanche rated z Low QG z Low Drain-to-Tab capacitance z Low package inductance Advantages z Low gate drive requirement z High power density z Fast intrinsic rectifier z Low drain to ground capacitance z Fast switching
Applications
z UPS, solar and wind power inverters z Synchronous rectifiers z Multi-phase DC to DC converters z Industrial battery chargers z Switching power supplies ISOPLUS i4-PakTM Isolated Tab
IXYS reserves the right to change limits, test conditions, and dimensions. FMM60-02TF ISOPLUS i4-PakTM Outline Ref: IXYS CO 0077 R0 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Symbol Test Conditions 2 Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 200 V VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V IGSS VGS = ±20 V, VDS = 0V ± 200 nA IDSS VDS = VDSS 5 μA VGS = 0V T J = 125°C 250 μ A RDS(on) VGS = 10V, ID = 30A, Note 1 32 40 m Ω gfs VDS = 10V, ID = 60A, Note 1 40 62 S Ciss 3700 pF Coss VGS = 0V, VDS = 25 V, f = 1 MHz 520 pF Crss 37 pF td(on) Resistive Switching Times 39 ns tr VGS = 10V, VDS = 0.5 z VDSS, ID = 30A 46 ns td(off) RG = 5Ω (External) 75 ns tf 42 ns Qg(on) 90 nC Qgs VGS= 10V, VDS = 0.5 z VDSS, ID = 30A 33 nC Qgd 21 nC RthJC 1.0 °C/W RthCS 0.15 °C/W Source-Drain Diode Characteristic Values TJ = 25°C unless otherwise specified) Symbol Test Conditions 3 Min. Typ. Max. IS VGS = 0V 33 A ISM Repetitive, pulse width limited by T JM 150 A VSD IF = 60A, VGS = 0V, Note 1 1.5 V trr 82 ns IRM 15.3 A QRM 0.63 μ C Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IF = 25A, -di/dt = 100A/ μs VR = 100V, VGS = 0V