FMM110-015X2F

FMM110-015X2F IXYS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

Features

z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V Electrical Isolation z Avalanche Rated z Low QG z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density

Applications

z Switched-Mode and Resonant-Mode Power Supplies z DC Choppers z AC Motor Drives z Uninterruptible Power Supplies z High Speed Power Switching

IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. FMM110-015X2F ISOPLUS i4-PakTM Outline Ref: IXYS CO 0077 R0 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Symbol Test Conditions 2 Characteristic Values (TJ = 25°C Unless Otherwise Specified) Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 150 V VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V IGSS VGS = ±20 V, VDS = 0V ± 200 nA IDSS VDS = VDSS, VGS = 0V 2 μA TJ = 150°C 500 μA RDS(on) VGS = 10V, ID = 55A, Note 1 20 m Ω gfs VDS = 10V, ID = 55A, Note 1 75 115 S Ciss 8600 pF Coss VGS = 0V, VDS = 25 V, f = 1 MHz 685 pF Crss 77 pF td(on) Resistive Switching Times 33 ns tr VGS = 10V, VDS = 0.5 z VDSS, ID = 55A 16 ns td(off) RG = 3.3Ω (External) 33 ns tf 18 ns Qg(on) 150 nC Qgs VGS= 10V, VDS = 0.5 z VDSS, ID = 55A 42 nC Qgd 46 nC RthJC 0.83 °C/W RthCS 0.15 °C/W Source-Drain Diode Characteristic Values TJ = 25°C Unless Otherwise Specified) Symbol Test Conditions 3 Min. Typ. Max. IS VGS = 0V 110 A ISM Repetitive, Pulse Width Limited by T JM 440 A VSD IF = 100A, VGS = 0V, Note 1 1.3 V trr 85 ns IRM 6.80 A QRM 0.29 μ C Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IF = 55A, -di/dt = 100A/ μs VR = 100V, VGS = 0V

© 2009 IXYS CORPORATION, All Rights Reserved FMM110-015X2F Fig. 1. Output Characteristics @ 25ºC 100 110 VDS - Volts ID - Amperes VGS = 15V 10V Fig. 2. Extended Output Characteristics @ 25ºC 100 150 200 250 300 350 02468 1 0 1 2 1 4 1 6 VDS - Volts ID - Amperes VGS = 15V 10V Fig. 3. Output Characteristics @ 150ºC 100 110 VDS - Volts ID - Amperes VGS = 15V 10V Fig. 4. R DS(on) Normalized to I D = 55A Value vs. Junction Temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade RDS(on) - Normalized VGS = 10V I D = 110A I D = 55A Fig. 5. R DS(on) Normalized to I D = 55A Value vs. Drain Current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 50 100 150 200 250 300 ID - Amperes RDS(on) - Normalized VGS = 10V 15V - - - - TJ = 175ºC TJ = 25ºC Fig. 6. Drain Current vs. Case Temperature 100 110 120 -50 -25 0 25 50 75 100 125 150 175 TC - Degrees Centigrade ID - Amperes

IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. FMM110-015X2F Fig. 7. Input Admittance 100 120 140 160 VGS - Volts ID - Amperes TJ = 150ºC 25ºC - 40ºC Fig. 8. Transconductance 100 120 140 160 180 0 20 40 60 80 100 120 140 160 ID - Amperes g f s - Siemens TJ = - 40ºC 150ºC 25ºC Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 150 200 250 300 350 VSD - Volts IS - Amperes TJ = 150ºC TJ = 25ºC Fig. 10. Gate Charge 0 20 40 60 80 100 120 140 160 QG - NanoCoulombs VGS - Volts VDS = 75V I D = 55A I G = 10mA Fig. 11. Capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 VDS - Volts Capacitance - PicoFarads f = 1 MHz Ciss Crss Coss Fig. 12. Forward-Bias Safe Operating Area 0.1 1.0 10.0 100.0 1,000.0 1 10 100 1000 VDS - Volts ID - Amperes 25µs 100µs 1ms 10ms100ms RDS(on) Limit TJ = 175ºC TC = 25ºC Single Pulse IXYS REF: F_110N15T2(61)4-23-09-A

© 2009 IXYS CORPORATION, All Rights Reserved FMM110-015X2F Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 55 60 65 70 75 80 85 90 95 100 105 110 ID - Amperes t r - Nanoseconds RG = 3.3Ω VGS = 10V VDS = 75V TJ = 25ºC TJ = 125ºC Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 120 160 200 240 280 2 4 6 8 1 01 21 41 61 82 0 RG - Ohms t r - Nanoseconds t d(on) - Nanoseconds t r td(on) - - - - TJ = 125ºC, VGS = 10V VDS = 75V I D = 55A I D = 110A Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade t f - Nanoseconds t d(off) - Nanoseconds t f td(off) - - - - RG = 3.3Ω, VGS = 10V VDS = 75V I D = 55A, 110A Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 55 60 65 70 75 80 85 90 95 100 105 110 ID - Amperes t f - Nanoseconds t d(off) - Nanoseconds t f td(off) - - - - RG = 3.3Ω, VGS = 10V VDS = 75V TJ = 125ºC TJ = 25ºC Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade t r - Nanoseconds RG = 3.3Ω VGS = 10V VDS = 75V I D = 110A I D = 55A Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 100 120 2 4 6 8 10 12 14 16 18 20 RG - Ohms t f - Nanoseconds 130 170 210 250 t d(off) - Nanoseconds t f td(off) - - - - TJ = 125ºC, VGS = 10V VDS = 75V I D = 110A I D = 55A

IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. FMM110-015X2F Fig. 19. Maximum Transient Thermal Impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds Z(th)JC - ºC / W IXYS REF: F_110N15T2(61)4-23-09-A