FMD15-06KC5 IXYS | Alldatasheet

Document overview

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Technical content

Features

 Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 40 pF)  Fast CoolMOS ™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness  Enhanced total power density  HiPerDyn™ FRED - consisting of series connected diodes - enhanced dynamic behaviour for high frequency operation

Applications

 Switched mode power supplies (SMPS)  Uninterruptible power supplies (UPS)  Power factor correction (PFC) Advantages  Easy assembly: no screws or isolation foils required  Space savings  High power density  High reliability MOSFET T Symbol Conditions Maximum Ratings V DSS TVJ = 25°C 600 V VGS ± 20 V ID25 ID90 TC = 25°C TC = 90°C A A EAS EAR single pulse repetitive 522 0.79 mJ mJ dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V 5 0 V/ns Electrically isolated back surface

2500 V electrical isolation

N-Channel Enhancement Mode Low R DSon, high VDSS MOSFET Ultra low gate charge ID = 7.9 A; TC = 25°C Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specifi ed) min. typ. max. RDSon VGS = 10 V; ID = 12 A 150 165 mΩ VGS(th) VDS = VGS; ID = 0.79 mA 2.5 3 3.5 V IDSS VDS = 600 V; VGS = 0 V TVJ = 25°C TVJ = 125°C 10 1µ A µA IGSS VGS = ± 20 V; VDS = 0 V 100 nA Ciss Coss VGS = 0 V; VDS = 100 V f = 1 MHz 2000 100 pF pF Qg Qgs Qgd VGS = 0 to 10 V; VDS = 400 V; ID = 12 A 52 nC nC nC t d(on) tr td(off) tf Eon Eoff Erec off VGS = 10 V; VDS = 400 V ID = 12 A; RG = 3.3 Ω tbd tbd tbd ns ns ns ns mJ mJ mJ R thJC RthCH with heat transfer paste 0.35

1.1 K/W

1) CoolMOS™ is a trademark of Infi neon Technologies AG. ISOPLUS i4™ isolated back surface q E72873 FMD D T FDM T D

© 2009 IXYS All rights reserved 2 - 3 20090209c FMD 15-06KC5 FDM 15-06KC5 IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information MOSFET T Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specifi ed) min. typ. max. IS VGS = 0 V 12 A VSD IF = 12 A; VGS = 0 V 0.9 1.2 V trr QRM IRM IF = 12 A; -diF /dt = 100 A/µs; VR = 400 V 390 7.5 ns µC A Component Symbol Conditions Maximum Ratings T VJ Tstg operating storage -55...+150 -55...+125 VISOL IISOL < 1 mA; 50/60 Hz 2500 V~ FC mounting force with clip 20...120 N Symbol Conditions Characteristic Values min. typ. max. CP coupling capacity between shorted pins and mounting tab in the case 40 pF dS, dA dS, dA pin - pin pin - backside metal 1.7 5.5 mm mm Weight 9 g Symbol Conditions Characteristic Values min. typ. max. VF IF = 15 A T VJ = 25°C IF = 30 A 2.50 3.00 V V IF = 15 A T VJ = 150°C IF = 30 A 2.00 2.55 A A IR VR = VRRM T VJ = 25°C T VJ = 150°C 0.08 µA mA IFSM t = 10 ms (50 Hz), sine; T VJ = 45°C 150 A IRM trr IF = 20 A; VR = 100 V; T VJ = 25°C -diF /dt = 200 A/µs A ns RthJC RthJH with heat transfer paste 0.8

2.4 K/W

Diode D (data for series connection) Symbol Conditions Maximum Ratings V RRM TVJ = 25°C to 150°C 600 V IF25 IF90 TC = 25°C TC = 90°C A A

© 2009 IXYS All rights reserved 3 - 3 20090209c FMD 15-06KC5 FDM 15-06KC5 IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information ISOPLUS i4TM Outline