FBE22-06N1 IXYS | Alldatasheet
Document overview
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Technical content
Features
- HiPerFREDTM Epitaxial Diodes - fast and soft reverse recovery – low switching losses - avalanche rated - low leakage current ISOPLUS i4-PACTM package - isolated back surface - enlarged creepage towards heatsink - application friendly pinout - high reliability - industry standard outline
Applications
high frequency rectifiers, output rectifiers of switched mode power supplies single phase mains rectifiers with minimized electromagnetic emissions power factor correction in conjunction Input Rectifier Bridge Symbol Conditions Maximum Ratings VRRM 600 V IFAV TC = 90°C; sine 180° (per diode) 10 A ID(AV)M TC = 90°C 20 A IFSM TVJ = 25°C; t = 10 ms; sine 50 Hz 40 A EAS IAS = 0.9 A; LAS =180 µH; TC = 25°C; non repetitive 0.1 mJ Ptot TC = 25°C (per diode) 35 W Symbol Conditions Characteristic Values (TVJ = 25/G176C, unless otherwise specified) min. typ. max. VF IF = 15 A; TVJ = 25°C 2.0 2.2 V TVJ = 125°C 1.5 V IR VR = VRRM ; TVJ = 25°C 0.06 mA TVJ = 125°C 0.1 mA IRM IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C 11 A trr VR = 300 V 80 ns RthJC (per diode) 3.5 K/W Data according to IEC 60747 and refer to a single diode unless otherwise stated.
© 2000 IXYS All rights reserved 2 - 2 FBE 22-06N1 Component Symbol Conditions Maximum Ratings Tstg -55...+125 /G176C VISOL IISOL /G163 1 mA; 50/60 Hz 2500 V~ FC mounting force with clip 20...120 N Symbol Conditions Characteristic Values min. typ. max. dS,dA pin - pin 1.7 mm dS,dA pin - backside metal 5.5 mm R thCH with heatsink compound 0.15 K/W Weight 9g Dimensions in mm (1 mm = 0.0394")