EPC2204A EPC-CO | Alldatasheet

Document overview

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Technical content

eGaN® FET DATASHEET EPC2204A EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | | 1 EFFICIENT POWER CONVERSION HAL EPC2204A – Automotive 80 V (D-S) Enhancement Mode Power Transistor VDS , 80 V RDS(on) , 6 mΩ max ID , 29 A AEC-Q101 G D S Die Size: 2.5 x 1.5 mm EPC2204A eGaN® FETs are supplied only in passivated die form with solder bars.

Applications

  • DC-DC Converters
  • Isolated DC-DC Converters
  • Automotive Lidar/ToF
  • Sync rectification for AC-DC and DC-DC
  • Point of Load Converters
  • USB-C
  • Class-D Audio
  • LED Lighting
  • eMobility Benefits
  • Ultra High Efficiency
  • No Reverse Recovery
  • Ultra Low QG
  • Small Footprint Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. Application Notes:
  • Easy-to-use and reliable gate, Gate Drive ON = 5 V typical, OFF = 0 V (negative voltage not needed)
  • Top of FET is electrically connected to source Questions: Scan QR code or click link below for more information including reliability reports, device models, demo boards! https://l.ead.me/EPC2204A Static Characteristics (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 0.2 mA 80 V IDSS Drain-Source Leakage VGS = 0 V, VDS = 80 V 0.04 0.2 mA IGSS Gate-to-Source Forward Leakage VGS = 6 V 0.01 1.3 Gate-to-Source Forward Leakage# VGS = 6 V, TJ = 125°C 0.3 6.7 Gate-to-Source Reverse Leakage VGS = -4 V 0.03 0.2 VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 4 mA 0.7 1.1 2.5 V RDS(on) Drain-Source On Resistance VGS = 5 V, ID = 16 A 4.4 6 mΩ VSD Source-Drain Forward Voltage# IS = 0.5 A, VGS = 0 V 1.6 V # Defined by design. Not subject to production test. Maximum Ratings PARAMETER VALUE UNIT VDS Drain-to-Source Voltage (Continuous) 80 V Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150 °C) 96 ID Continuous (TA = 25°C) 29 A Pulsed (25°C, TPULSE = 300 µs) 125 VGS Gate-to-Source Voltage 6 V Gate-to-Source Voltage -4 TJ Operating Temperature -40 to 150 TSTG Storage Temperature -40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 1 °C/W RθJB Thermal Resistance, Junction-to-Board 2.5 RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 64 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.

eGaN® FET DATASHEET EPC2204A EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | | 5 DIE MARKINGS DIE OUTLINE Solder Bump View Pad 1 is Gate; Pads 2 ,4, 6 are Source; Pads 3, 5 are Drain Note: Substrate (top side) connected to source Side View YYYY 2A04 ZZZZ TAPE AND REEL CONFIGURATION 4 mm pitch, 8 mm wide tape on 7” reel 7” inch reel Die orientation dot Gate solder bar is under this corner Die is placed into pocket solder bars side down (face side down) Loaded Tape Feed Direction a d e f g h c b DIM Dimension (mm) EPC2204A (Note 1) Target MIN MAX a 8.00 7.9 0 8.30 b 1.75 1.65 1.85 c (Note 2) 3.50 3.45 3.55 d 4.00 3.90 4.10 e 4.00 3.90 4.10 f (Note 2) 2.00 1.95 2.05 g 1.50 1.50 1.60 h 0.50 0.45 0.55 Note 1: MSL 1 (moisture sensitivity level 1) classified according to IPC/ JEDEC industry standard. Note 2: Pocket position is relative to the sprocket hole measured as true position of the pocket, not the pocket hole. Part Number Laser Markings Part # Marking Line 1 Lot_Date Code Marking Line 2 Lot_Date Code Marking Line 3 EPC2204A 2A04 YYYY ZZZZ 2A04 YYYY ZZZZ Die orientation dot Gate Pad bump is under this corner 518 ± -25 Seating plane 638 120 ± 12 A d j hg B e c f 3 4 5 6 k DIM Micrometers MIN Nominal MAX A 2470 2500 2530 B 1470 1500 1530 c 1175 d 1350 e 500 f 250 g 300 h 825 j 787.5 k 225 m 250

eGaN® FET DATASHEET EPC2204A EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | | 6 RECOMMENDED LAND PATTERN (units in µm) RECOMMENDED STENCIL DRAWING (units in µm) Recommended stencil should be 4 mil (100 µm) thick, must be laser cut, openings per drawing. The corner has a radius of R60. Intended for use with SAC305 Type 4 solder, reference 88.5% metals content. Split stencil design can be provided upon request, but EPC has tested this stencil design and not found any scooping issues. Additional assembly resources available at https://epc-co.com/epc/DesignSupport/AssemblyBasics.aspx Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein to improve reliability, function or design. EPC does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. eGaN® is a registered trademark of Efficient Power Conversion Corporation. EPC Patent Listing: epc-co.com/epc/AboutEPC/Patents.aspx Information subject to change without notice. Revised August, 2022 A j h1 g1 B e c1 3 4 5 6 k m A j h1 g1 B e c1 R60 k f2 f2m Land pattern is solder mask defined Pad 1 is Gate; Pads 2 ,4, 6 are Source; Pads 3, 5 are Drain DIM Nominal A 2500 B 1500 c1 1155 d1 1330 e 500 f1 230 g1 280 h1 805 j 787.5 k 225 m 250 DIM Nominal A 2500 B 1500 c1 1155 d1 1330 e 500 f1 230 f2 210 g1 280 h1 805 j 787.5 k 225 m 250