DSS2X101-02A IXYS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
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Technical content

Features

  • International standard package miniBLOC  Isolation voltage 2500 V~  UL registered E 72873  2 independent Schottky diodes in 1 package  Very low V F  Extremely low switching losses  Low I RM-values

Applications

 Rectifiers in switch mode power supplies (SMPS)  Free wheeling diode in low voltage converters Advantages  High reliability circuit operation  Low voltage peaks for reduced protection circuits  Low noise switching  Low losses Dimensions see Outlines.pdf miniBLOC, SOT-227 B Symbol Conditions Maximum Ratings IFRMS 150 A IFAVM TC = 105°C; rectangular, d = 0.5 100 A IFAVM TC = 105°C; rectangular, d = 0.5; per device 200 A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 1400 A EAS IAS = 4 A; L = 100 µH; TVJ = 25°C; non repetitive 0.8 mJ IAR VA = 1.5·VRRM typ.; f = 10 kHz; repetitive 0.4 A (dv/dt)cr 18 kV/µs TVJ -40...+150 °C TVJM 150 °C Tstg -40...+150 °C Ptot TC = 25°C 310 W VISOL 50/60 Hz, RMS 2500 V~ I ISOL < 1 mA Md mounting torque (M4) 1.1-1.5/9-13 Nm/lb.in. terminal connection torque (M4) 1.1-1.5/9-13 Nm/lb.in. Weight typical 30 g Symbol Conditions Characteristic Values typ. max. IR c VR = VRRM;T VJ = 25°C 4 mA TVJ = 125°C 10 mA VF IF = 100 A; T VJ = 125°C 0.84 V IF = 100 A; T VJ = 25°C 0.94 V IF = 200 A; T VJ = 125°C 1.11 V RthJC per diode 0.4 K/W RthCH per diode 0.1 K/W VRSM VRRM Type V V 200 200 DSS 2x101-02A

© 2005 IXYS All rights reserved 2 - 2 IXYS reserves the right to change limits, Conditions and dimensions. DSS 2x101-02A 0540 100 1000 0 50 100 150 0.001 0.01 0.1 0 50 100 100 120 140 0.0001 0.001 0.01 0.1 1 0.01 0.1 0 40 80 120 120 160 IF(AV) TC C IF(AV) t s K/W 0 50 100 150 100 1000 10000 CT IR IF A VF VR pF V mA A P(AV) W ZthJC V A 0.33 0.25 IFSM tP A VR V s TVJ = 150°C 125°C 25°C 50°C 25°C 75°C 100°C 125°C TVJ=150°C TVJ= 25°C d = 0.5 DC d = DC 0.5 0.33 0.25 0.17 0.08 0.08 0.17 D = 0.5 Single Pulse DSS 2x101-02A Fig. 3 Typ. junction capacitance CT versus reverse voltage VR Fig. 2 Typ. reverse current I R vs. reverse voltage VR Fig. 1 Max. forward voltage drop characteristics Fig. 4 Average forward current IF(AV) versus case temperature TC Fig. 5 Forward power loss characteristics Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode