DSS17-06CR IXYS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
G Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation G Low cathode to tab capacitance (<25pF) G International standard package G Planar passivated chips G Very short recovery time G Extremely low switching losses G Low IRM-values G Soft recovery behaviour G Epoxy meets UL 94V-0 G Isolated and UL registered E153432
Applications
G Antiparallel diode for high frequency switching devices G Antisaturation diode G Snubber diode G Free wheeling diode in converters and motor control circuits G Rectifiers in switch mode power supplies (SMPS) G Inductive heating G Uninterruptible power supplies (UPS) G Ultrasonic cleaners and welders Advantages G Avalanche voltage rated for reliable operation G Soft reverse recovery for low EMI/RFI G Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf A = Anode, C = Cathode * Patent pending ISOPLUS 247TM A C Isolated back surface * C A Preliminary Data
© 2000 IXYS All rights reserved 2 - 2 100 200 400 600 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 0.01 0.1 120 160 IF(AV) TC IF(AV) t s K/W IFSM tP A 200 400 600 100 1000 CT IR IF A VF VR VR V pF V mA A P(AV) W ZthJC V Single Pulse DSS17-06CR A µs TVJ=175°C 150°C 125°C 100°C 25°C TVJ = 175°C 125°C 25°C TVJ= 25°C d=0.5 d = DC 0.5 0.33 0.25 0.17 0.08 50°C DC 0.08 D=0.5 0.33 0.25 0.17 75°C 150°C DSS 17-06CR Fig. 3 Typ. junction capacitance CT versus reverse voltage VR Fig. 2 Typ. value of reverse current IR versus reverse voltage VR Fig. 1 Maximum forward voltage drop characteristics Fig. 4 Average forward current IF(AV) versus case temperature TC Fig. 5 Forward power loss characteristics Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode