DSI30 IXYS | Alldatasheet
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z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low cathode to tab capacitance(15pF typical) z International standard package z Epoxy meets UL 94V-0 CA C A ISOPLUS 220TM Isolated back surface* Symbol Conditions Maximum Ratings IFRMS 60 A IFAV TC = 95°C; 180O sine (RMS current limited) 30 A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 200 A VR = 0 V; t = 8.3 ms (60 Hz), sine 210 A TVJ = 150°C; t = 10 ms (50 Hz), sine 175 A VR = 0 V; t = 8.3 ms (60 Hz), sine 185 A I2t TVJ = 45°C; t = 10 ms (50 Hz), sine 200 A 2s VR = 0 V; t = 8.3 ms (60 Hz), sine 185 A 2s TVJ = 150°C; t = 10 ms (50 Hz), sine 155 A 2s VR = 0 V; t = 8.3 ms (60 Hz), sine 145 A 2s TVJ -55...+150 °C TVJM 150 °C Tstg -55...+150 °C TL 1.6 mm (0.062 in.) from case for 10 s 260 °C VISOL 50/60 Hz RMS; IISOL ≤ 1 mA 2500 V~ Weight typical 2 g VRRM = 800 - 1200 V IF(AV)M = 30 A DSI 30 VRSM VRRM Type V V 900 800 DSI 30-08AC 1300 1200 DSI 30-12AC Symbol Conditions Characteristic Values typ. max. IR TVJ = 25°C; V R = VRRM 0.05 mA TVJ = TVJM;V R = VRRM 1.5 mA VF IF = 45 A; T VJ = 25°C 1.45 V VTO For power loss calculations only 0.80 V rT TVJ = TVJM 15 m Ω RthJC 1.1 K/W RthCH 0.6 K/W Note: See DSI 30..A data sheet for electrical characteristic curves. DS98791A(07/03) Preliminary Data Sheet ISOPLUS220 Outline (2 leads)