DSI30-08AC

DSI30-16AS IXYS | Alldatasheet

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Technical content

Backside: cathode FAV FVV 1.25 RRM 1600 V= V I= A Features / Advantages: Applications: Package:

• Planar passivated chips
• Very low leakage current
• Very low forward voltage drop
• Improved thermal behaviour
• Diode for main rectification
• For single and three phase bridge configurations TO-263 (D2Pak)
• Industry standard outline
• RoHS compliant
• Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. 20130107aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

V = V A²s A²s A²s A²s Symbol Definition Ratings typ. max. IR V I A VF 1.29 R 0.9 K/W R min. VRSM V 40T = 25°CVJ T = °CVJ mA1.5V = VR T = 25°CVJI = AF V T = °CC 130 Ptot 160 WT = 25°CC R K/W 1600 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation Conditions Unit 1.60 T = 25°CVJ 150 VF0 V0.82T = °CVJ 175 rF 14.1 mΩ V1.25T = °CVJI = AF V 1.66 I = AF 60 I = AF 60 threshold voltage slope resistance for power loss calculation only µA 150 VRRM V1600max. repetitive reverse blocking voltage T = 25°CVJ CJ 10junction capacitance V = V;400 T = 25°Cf = 1 MHzR VJ pF IFSM t = 10 ms; (50 Hz), sine T = 45°C VJmax. forward surge current T = °CVJ 150 I²t T = 45°Cvalue for fusing T = °C150 V = 0 VR V = 0 VR V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R T = °CVJ 175 300 325 325 315 A A A A 255 275 450 440 1600 FAV d =rectangular 0.5 average forward current thermal resistance junction to casethJC thermal resistance case to heatsinkthCH Rectifier 1700 0.25 IXYS reserves the right to change limits, conditions and dimensions. 20130107aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

Part No. Logo Assembly Code XXXXXXXXX IXYS yywwz 000000Assembly Line DSI30-12AS TO-263AB (D2Pak) (2) 1200 Package TVJ °C Tstg °C150storage temperature -55 Weight g2 Symbol Definition typ. max.min.Conditions virtual junction temperature Unit FC N60mounting force with clip 20 I RMS RMS current 35 Aper terminal 175-40 DSI30-12A DSI30-12AC TO-220AC (2) ISOPLUS220AC (2) 1200 1200 DSI30-08AS DSI30-08A DSI30-08AC TO-263AB (D2Pak) (2) TO-220AC (2) ISOPLUS220AC (2) 800 800 800 TO-263 (D2Pak) Similar Part Package Voltage class DSI30-16A TO-220AC (2) 1600 Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering DSI30-16AS 498378Tape & Reel 800DSI30-16ASStandard threshold voltage V0.82 mΩ V0 max R0 max slope resistance * 11 Equivalent Circuits for Simulation T =VJ I V0 R0 Rectifier 175 °C* on die level IXYS reserves the right to change limits, conditions and dimensions. 20130107aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

W A c L E 2x e L1D 321 3.81 (0.150) 1.78 (0.07) 2.54 (0.100) 3.05 (0.120) 10.92 (0.430) 9.02 (0.355) mm (Inches) Recommended min. foot print 3x b2 2x b H Supplier Option m i nm a xm i nm a x A 4.06 4.83 0.160 0.190 b 0.51 0.99 0.020 0.039 b2 1.14 1.40 0.045 0.055 c 0.40 0.74 0.016 0.029 c2 1.14 1.40 0.045 0.055 D 8.38 9.40 0.330 0.370 D1 8.00 8.89 0.315 0.350 E 9.65 10.41 0.380 0.410 E1 6.22 8.50 0.245 0.335 e H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 1.02 1.68 0.040 0.066 W typ. 0.02 0.040 typ. 0.0008 0.002 Dim. Millimeter Inches typ. 0.10 typ. 0.004 2.41 0.095 0.098 4.28 0.169 All dimensions conform with and/or within JEDEC standard. 2,54 BSC 0,100 BSC 2.5 Outlines TO-263 (D2Pak) IXYS reserves the right to change limits, conditions and dimensions. 20130107aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

0.001 0.01 0.1 1 100 150 200 250 23 4 5 6 7 8 9 011 100 200 300 400 500 01 0 2 0 3 0 0 50 100 150 200 1 10 100 1000 10000 0.0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 200 IF [A] VF [V] IFSM [A] t[ s ] I2t [A2s] t[ m s ] Ptot [W] IF(AV)M [A] Tamb [°C] IF(AV)M [A] TC [°C] ZthJC [K/W] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I2t versus time per diode case temperature Fig. 6 Transient thermal impedance junction to case t[ m s ] Constants for ZthJC calculation: iR thi (K/W) t i (s) 10 . 0 3 0 . 0 0 0 4 2 0.08 0.002 3 0.2 0.003 40 . 3 9 0 . 0 3 50 . 2 0 . 2 9 TVJ = 25°C TVJ =1 5 0 ° C TVJ =4 5 ° C

50 Hz, 80% VRRM

TVJ =4 5 ° C TVJ = 150°C VR =0V TVJ = 125°C 150°C RthHA:

0.6 K/W

0.8 K/W

DC = 0.5 0.4 0.33 0.17 0.08 DC = 0.5 0.4 0.33 0.17 0.08 Rectifier IXYS reserves the right to change limits, conditions and dimensions. 20130107aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved