L356 IXYS | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
Features
Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (< 25 pF) International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low I RM-values Soft recovery behaviour Epoxy meets UL 94V-0 Isolated and UL registered E153432
Applications
Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low I RM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf
© 2004 IXYS All rights reserved 2 - 2 DSEP 9-06CR 406 200 600 10000 400 800 0.0001 0.001 0.01 0.1 1 10 0.01 0.1 04 0 8 0 1 2 0 1 6 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Kf TVJ -diF/dt t s K/W 0 200 400 600 800 1000 0.0 0.4 0.8 1.2 1.6 VFR diF/dt V 200 600 100004 0 0 8 0 0 100 1000 0.0 0.1 0.2 0.3 0.4 012345 IRMQr IF A VF -diF/dt -diF/dt A/µs A V µC A/µs A/µs trr ns tfr ZthJC A/µs µs DSEP 9-06CR TVJ = 150°C TVJ = 100°C TVJ = 25°C IF = 20 A IF = 10 A IF = 5 A IF = 20 A IF = 10 A IF = 5 A IF = 20 A IF = 10 A IF = 5 A TVJ = 100°C IF = 10 A TVJ = 100°C VR = 300 V TVJ = 100°C VR = 300 V TVJ = 100°C VR = 300 V IRM QR VFRtrr Fig. 3 Typ. peak reverse current IRM versus -diF/dt Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt Fig. 1 Max. forward current IF versus VF Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ Fig. 5 Typ. recovery time trr versus -diF/dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt Fig. 7 Transient thermal resistance junction to case