DSEP8-12A IXYS | Alldatasheet

Document overview

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Technical content

Features

G International standard package G Planar passivated chips G Very short recovery time G Extremely low switching losses G Low IRM -values G Soft recovery behaviour G Epoxy meets UL 94V-0

Applications

G Antiparallel diode for high frequency switching devices G Antisaturation diode G Snubber diode G Free wheeling diode in converters and motor control circuits G Rectifiers in switch mode power supplies (SMPS) G Inductive heating G Uninterruptible power supplies (UPS) G Ultrasonic cleaners and welders Advantages G Avalanche voltage rated for reliable operation G Soft reverse recovery for low EMI/RFI G Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf CA A = Anode, C = Cathode, TAB = Cathode C A TO-220 AC C (TAB) Pulse test:x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 /G109s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. DSEP 8-12A IFAV = 10 A VRRM = 1200 V trr = 40 ns VRSM VRRM Type V V 1200 1200 DSEP 8-12A Symbol Conditions Maximum Ratings IFRMS 35 A IFAVM TC = 115°C; rectangular, d = 0.5 10 A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 40 A EAS TVJ = 25°C; non-repetitive 6.9 mJ IAS = 8 A; L = 180 µH IAR VA = 1.25·VR typ.; f = 10 kHz; repetitive 0.8 A TVJ -55...+175 °C TVJM 175 °C Tstg -55...+150 °C Ptot TC = 25°C 60 W Weight typical 2 g Symbol Conditions Characteristic Values typ. max. IR x TVJ = 25°C VR = VRRM 60 /G109A TVJ = 150°C VR = VRRM 0.25 mA VF y IF = 10 A; TVJ = 150°C 1.96 V TVJ = 25°C 2.94 V R thJC 2.5 K/W R thCH 0.5 K/W trr IF = 1 A; -di/dt = 50 A//G109s; 40 ns VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 12 A; -diF/dt = 100 A//G109s4 A TVJ = 100°C 008

© 2000 IXYS All rights reserved 2 - 2 NOTE: Fig. 2 to Fig. 6 shows typical values DSEP 8-12A 200 600 10000 400 800 100 110 120 130 140 150 0.001 0.01 0.1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 Kf TVJ -diF/dt t s K/W 0 200 400 600 800 1000 120 0.0 0.4 0.8 1.2 VFR diF/dt V 200 600 10000 400 800 100 1000 500 1000 1500 2000 01234 IRMQ r IF A VF -diF/dt -diF/dt A//c109 s A V nC A//c109 s A//c109 s trr ns tfr ZthJC A//c109 s µs DSEP 8-12A IF= 20A IF= 10A IF= 5A TVJ= 100°C VR = 600V TVJ= 100°C IF = 10A Fig. 3 Peak reverse current IRM versus -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt Fig. 1 Forward current IF versus VF TVJ= 100°C VR = 600V TVJ= 100°C VR = 600V IF= 20A IF= 10A IF= 5A Q r IRM Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt IF= 20A IF= 10A IF= 5A tfr VFR Fig. 7 Transient thermal resistance junction to case Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 1.449 0.0052 2 0.558 0.0003 3 0.493 0.017 TVJ= 25°C TVJ=100°C TVJ=150°C 008