DSEP8-02A IXYS | Alldatasheet
Document overview
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Technical content
Features
G International standard package G Planar passivated chips G Very short recovery time G Extremely low switching losses G Low IRM -values G Soft recovery behaviour G Epoxy meets UL 94V-0
Applications
G Antiparallel diode for high frequency switching devices G Antisaturation diode G Snubber diode G Free wheeling diode in converters and motor control circuits G Rectifiers in switch mode power supplies (SMPS) G Inductive heating G Uninterruptible power supplies (UPS) G Ultrasonic cleaners and welders Advantages G Avalanche voltage rated for reliable operation G Soft reverse recovery for low EMI/RFI G Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf CA A = Anode, C = Cathode, TAB = Cathode C A TO-220 AC C (TAB) Pulse test:x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 /G109s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. DSEP 8-02A IFAV =8 A VRRM = 200 V trr = 25 ns VRSM VRRM Type V V 200 200 DSEP 8-02A Symbol Test Conditions Maximum Ratings IFRMS 35 A IFAVM TC = 150°C; rectangular, d = 0.5 8 A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 80 A EAS TVJ = 25°C; non-repetitive 0.5 mJ IAS = 2 A; L = 180 µH IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.2 A TVJ -55...+175 °C TVJM 175 °C Tstg -55...+150 °C Ptot TC = 25°C 60 W Weight typical 2 g Symbol Test Conditions Characteristic Values typ. max. IR x TVJ = 25°C VR = VRRM 50 /G109A TVJ = 150°C VR = VRRM 0.2 mA VF y IF = 8 A; T VJ = 150°C 0.94 V TVJ = 25°C 1.30 V R thJC 2.5 K/W R thCH 0.5 K/W trr IF = 1 A; -di/dt = 50 A//G109s; 25 ns VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 10 A; -diF/dt = 100 A//G109s4 . 1 A TVJ = 100°C 008 Preliminary Data