DSEP60-06A IXYS | Alldatasheet

Document overview

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Technical content

Features

G International standard package G Planar passivated chips G Very short recovery time G Extremely low switching losses G Low IRM -values G Soft recovery behaviour G Epoxy meets UL 94V-0

Applications

G Antiparallel diode for high frequency switching devices G Antisaturation diode G Snubber diode G Free wheeling diode in converters and motor control circuits G Rectifiers in switch mode power supplies (SMPS) G Inductive heating G Uninterruptible power supplies (UPS) G Ultrasonic cleaners and welders Advantages G Avalanche voltage rated for reliable operation G Soft reverse recovery for low EMI/RFI G Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf Pulse test:x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 /G109s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. CA A = Anode, C = Cathode, TAB = Cathode TO-247 AD TO-268 AA (A-Type) (AT-Type) A A C (TAB) C A C (TAB) DSEP 60-06A DSEP 60-06AT IFAV = 60 A VRRM = 600 V trr = 35 ns Symbol Conditions Maximum Ratings IFRMS TVJ = TVJM 70 A IFAVM TC = 110°C; rectangular, d = 0.5 60 A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 600 A EAS TVJ = 25°C; non-repetitive 0.3 mJ IAS = 1.6 A; L = 180 µH IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.2 A TVJ -55...+175 °C TVJM 175 °C Tstg -55...+150 °C Ptot TC = 25°C 230 W Weight typical 6 g Symbol Conditions Characteristic Values typ. max. IR x TVJ = 25°C VR = VRRM 650 /G109A TVJ = 150°C VR = VRRM 2.5 mA VF y IF = 60 A; TVJ = 150°C 1.39 V TVJ = 25°C 2.04 V R thJC 0.65 K/W R thCH 0.25 K/W trr IF = 1 A; -di/dt = 300 A//G109s; 35 ns VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 130 A; -diF/dt = 100 A//G109s8 . 3 A TVJ = 100°C VRSM VRRM Type V V 600 600 DSEP 60-06A DSEP 60-06AT 018

© 2000 IXYS All rights reserved 2 - 2 DSEP 60-06A DSEP 60-06AT 200 600 10000 400 800 100 110 120 130 140 0.0001 0.001 0.01 0.1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 Kf TVJ -diF/dt t s K/W 0 200 400 600 800 1000 0.0 0.4 0.8 1.2 1.6 VFR diF/dt V 200 600 10000 400 800 100 1000 1000 2000 3000 4000 012 100 120 140 160 IRMQ r IF A VF -diF/dt -diF/dt A//c109 s A V nC A//c109 s A//c109 s trr ns tfr A//c109 s µs DSEP 60-06A ZthJC IF=120A IF= 60A IF= 30A TVJ= 100°C VR = 300V TVJ= 100°C IF = 60A Fig. 3 Peak reverse current IRM versus -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt Fig. 1 Forward current IF versus VF TVJ= 100°C VR = 300V TVJ= 100°C VR = 300V IF=120A IF= 60A IF= 30A Q r IRM Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt IF=120A IF= 60A IF= 30A tfr VFR Fig. 7 Transient thermal resistance junction to case Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 0.324 0.0052 2 0.125 0.0003 3 0.201 0.0385 TVJ= 25°C TVJ=150°C TVJ=100°C NOTE: Fig. 2 to Fig. 6 shows typical values 018