DSEP6-06AS IXYS | Alldatasheet
Document overview
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Technical content
Features
Planar passivated chips Very short recovery time Extremely low switching losses Low I RM-values Soft recovery behaviour
Applications
Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling Dimensions see pages D4 - 85-86 IFAVM =6 A VRRM = 600 V trr = 20 ns TO-252AA (DPAK) Anode Anode Cathode (Flange) VRSM VRRM Type Marking V V on product 600 600 DSEP 6-06AS 6P060AS CA Symbol Conditions Maximum Ratings IFRMS TVJ = TVJM 26 A IFAVM ① TC = 152°C; rectangular, d = 0.5 6 A IFRM tP < 10 µs; rep. rating, pulse width limited by T VJM 12 A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 40 A E AS TVJ = 25°C; non-repetitive 0.1 mJ IAS = 0.8 A; L = 180 µH IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A TVJ -40...+175 °C TVJM 175 °C Tstg -40...+150 °C Ptot TC = 25°C 55 W Weight typ. 0.3 g ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5 Data according to IEC 60747 Symbol Conditions Characteristic Values typ. max. IR TVJ = 25°C V R = VRRM 50 µA TVJ = 150°C V R = VRRM 0.2 mA VF IF = 6 A; T VJ = 150°C 1.33 V TVJ = 25°C 2.02 V RthJC 2.8 K/W trr IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°C 20 tbd ns IRM VR = 100 V; I F = 10 A; -diF/dt = 100 A/µs 3.5 4.4 A TVJ = 100°C
© 2004 IXYS All rights reserved 2 - 2 DSEP 6-06AS 432IXYS reserves the right to change limits, test conditions and dimensions. NOTE: Fig. 2 to Fig. 6 shows typical values 200 600 10000 400 800 100 110 0.001 0.01 0.1 0 40 80 120 160 0.0 0.4 0.8 1.2 1.6 2.0 Kf TVJ -diF/dt t s K/W 0 200 400 600 800 1000 0.0 0.3 0.6 0.9 1.2 VFR diF/dt V 200 600 10000 400 800 100 1000 200 400 600 800 1000 IRM Qr IF A VF -diF/dt -diF/dt A/µs A V nC A/µs A/µs trr ns tfr A/µs µs DSEP 6-06AS ZthJC TVJ =150°C TVJ =100°C TVJ = 25°C IF = 12A IF = 6A IF = 3A TVJ = 100°C VR = 300V TVJ = 100°C VR = 300V TVJ = 100°C VR = 300V TVJ = 100°C IF = 6A VFR tfr IRM Qr IF = 12A IF = 6A IF = 3A IF = 12A IF = 6A IF = 3A Fig. 3 Peak reverse current I RM versus -diF/dt Fig. 2 Reverse recovery charge Q r versus -diF/dt Fig. 1 Forward current I F versus VF Fig. 4 Dynamic parameters Q r, IRM versus TVJ Fig. 5 Recovery time t rr versus -diF/dt Fig. 6 Peak forward voltage V FR and tfr versus diF/dt Fig. 7 Transient thermal resistance junction to case