DSEP30-12CR IXYS | Alldatasheet
Document overview
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Technical content
Features
- Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
- Low cathode to tab capacitance (<25pF)
- International standard package
- Planar passivated chips
- Very short recovery time
- Extremely low switching losses
- Low IRM -values
- Soft recovery behaviour
- Epoxy meets UL 94V-0
- Isolated and UL registered E153432
Applications
- Antiparallel diode for high frequency switching devices
- Antisaturation diode
- Snubber diode
- Free wheeling diode in converters and motor control circuits
- Rectifiers in switch mode power supplies (SMPS)
- Inductive heating
- Uninterruptible power supplies (UPS)
- Ultrasonic cleaners and welders Advantages
- Avalanche voltage rated for reliable operation
- Soft reverse recovery for low EMI/RFI
- Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
- ISOPLUS 247 TM package for clip or spring mounting Dimensions see IXYS CD 2000 DSEP 30-12CR IFAV = 30 A VRRM = 1200 V trr = 20 ns VRSM VRRM Type V V 1200 1200 DSEP 30-12CR 008 Symbol Conditions Maximum Ratings IFRMS 70 A IFAVM TC = 85°C; rectangular, d = 0.5 30 A IFRM tP < 10 µs; rep. rating, pulse width limited by TVJM tbd A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 250 A EAS TVJ = 25°C; non-repetitive 0.2 mJ IAS = 1.3 A; L = 180 µH IAR VA = 1.25·VR typ.; f = 10 kHz; repetitive 0.1 A TVJ -55...+175 °C TVJM 175 °C Tstg -55...+150 °C Ptot TC = 25°C 165 W VISOL 50/60 Hz RMS; IISOL ≤ 1 mA 2.5 kV Weight typical 6 g Symbol Conditions Characteristic Values typ. max. IR ① TVJ = 25°C VR = VRRM 250 µA TVJ = 150°C VR = VRRM 2m A VF ② IF = 30 A; TVJ = 150°C 3.1 V TVJ = 25°C 5.0 V R thJC 0.9 K/W R thCH with heatsink compound 0.25 K/W trr IF = 1 A; -di/dt = 200 A/µs; 20 ns VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs 4.0 A TVJ = 100°C