DSEP2X61-12A IXYS | Alldatasheet

Document overview

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Technical content

Features

G International standard package miniBLOC G Isolation voltage 2500 V~ G UL registered E 72873 G 2 independent FRED in 1 package G Planar passivated chips G Very short recovery time G Extremely low switching losses G Low IRM-values G Soft recovery behaviour

Applications

G Antiparallel diode for high frequency switching devices G Antisaturation diode G Snubber diode G Free wheeling diode in converters and motor control circuits G Rectifiers in switch mode power supplies (SMPS) G Inductive heating G Uninterruptible power supplies (UPS) G Ultrasonic cleaners and welders Advantages G Avalanche voltage rated for reliable operation G Soft reverse recovery for low EMI/RFI G Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf miniBLOC, SOT-227 B Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. DSEP 2x 61-12A IFAV = 2x 60 A VRRM = 1200 V trr = 40 ns VRSM VRRM Type V V 1200 1200 DSEP 2x 61-12A Symbol Conditions Maximum Ratings IFRMS 100 A IFAVM TC = 80°C; rectangular, d = 0.5 A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 800 A EAS TVJ = 25°C; non-repetitive mJ IAS = 16 A; L = 180 µH IAR VA = 1.25·VR typ.; f = 10 kHz; repetitive 1.6 A TVJ -40...+150 TVJM 150 Tstg -40...+150 Ptot TC = 25°C 200 W VISOL 50/60 Hz, RMS 2500 IISOL 1 mA Md mounting torque (M4) 1.1-1.5/9-13 Nm/lb.in. terminal connection torque (M4) 1.1-1.5/9-13 Nm/lb.in. Weight typical g Symbol Conditions Characteristic Values typ. max. IR x TVJ = 25°C VR = VRRM mA TVJ = 150°C VR = VRRM mA VF y IF = 60 A; TVJ = 125°C 1.70 V TVJ = 25°C 2.42 V RthJC 0.6 K/W RthCH 0.1 K/W trr IF = 1 A; -di/dt = 400 A/s; ns VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 200 A; -diF/dt = 100 A/s A TVJ = 100°C 912

© 2000 IXYS All rights reserved 2 - 2 NOTE: Fig. 2 to Fig. 6 shows typical values DSEP 2x 61-12A 200 600 1000 400 800 200 220 240 260 280 300 0.00001 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 120 160 0.0 0.5 1.0 1.5 2.0 Kf TVJ -diF/dt t s K/W 200 400 600 800 1000 0.0 0.4 0.8 1.2 VFR diF/dt V 200 600 1000 400 800 120 100 1000 0.0 2.5 5.0 7.5 10.0 12.5 15.0 100 IRM Qr IF A VF -diF/dt -diF/dt A/ms A V mC A/ms A/ms trr ns tfr A/ms µs DSEP 2x61-12A ZthJC IF= 120A IF= 60A IF= 30A TVJ= 100°C VR = 600V TVJ= 100°C IF = 60A Fig. 3 Peak reverse current IRM versus -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt Fig. 1 Forward current IF versus VF TVJ= 100°C VR = 600V TVJ= 100°C VR = 600V IF= 120A IF= 60A IF= 30A Qr IRM Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt IF= 120A IF= 60A IF= 30A tfr VFR Fig. 7 Transient thermal resistance junction to case TVJ=150°C TVJ=100°C TVJ= 25°C Constants for ZthJC calculation: i Rthi (K/W) ti (s) 0.212 0.0055 0.248 0.0092 0.063 0.0007 0.077 0.0391 912