DSEP2X31-06B IXYS | Alldatasheet

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Technical content

Features / Advantages: typ. max. IFSM IR A V 250 I A VF 1.58 R 1.15 K/W VR = min. t = 10 ms Applications: VRRM V600 250TVJV° C = TVJ °C=m A 1 Package: Part number VR = TVJ =° CIF =A V TC = 95°Cd = Ptot 100 WTC °C= TVJ 150 °C-40 V I RRM = 600 TVJ = 45°C DSEP2x31-06A V A 600 V600 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current Conditions Unit 1.88 TVJ °C=2 5 CJ junction capacitance V = V; T 150 VF0 V0.98TVJ = 150°C rF 8.2 f = 1 MHz = °C 25 mΩ V1.23TVJ =° CIF =A V 1.48 IF =A 60 IF =A 60 threshold voltage slope resistance for power loss calculation only Backside: isolated

12 ATVJ =° C

(50 Hz), sine t rr = 35 ns

  • Housing: High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs SOT-227B (minibloc)
  • rIndustry standard outline
  • rCu base plate internal DCB isolated
  • rIsolation Voltage 3000 V
  • rEpoxy meets UL 94V-0
  • rRoHS compliant R VJ IRM max. reverse recovery current IF =A ;30 T= 100°CVJ -diF =A / µ s400/dtt rr VR =V 300 TVJ =° C25 T= 100°CVJ µA 26400 pF thermal resistance junction to casethJC rectangular 0.5
  • Planar passivated chips
  • Very low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS) FAV average forward current FAV 150 IXYS reserves the right to change limits, conditions and dimensions. 20100531aData according to IEC 60747and per diode unless otherwise specified

2010 IXYS all rights reserved

10.5 3.2 8.6 6.8 IRMS Aper terminal 100 R thCH K/W0.10 MD Nm1.5mounting torque 1.1 Tstg °C150storage temperature -40 Weight g30 Symbol Definition Ratings typ. max.min.Conditions RMS current thermal resistance case to heatsink Unit Ordering Delivering Mode Base Qty Code Key Standard Part Name DSEP2x31-06A 473928Tube 10 abcde YYWWZ XXXXXX Product Marking Logo Part No. DateCode Assembly Code Assembly Line DSEP2x31-06B SOT-227B (minibloc) Similar Part Package Marking on Product DSEP2x31-06A 600 Voltage Class MT Nm1.5terminal torque 1.1 VISOL V3000t = 1 second V2500t = 1 minute isolation voltage dSpp/App mm mm creepage | striking distance on surface | through air terminal to terminal dSpb/Apb creepage | striking distance on surface | through air terminal to backside IXYS reserves the right to change limits, conditions and dimensions. 20100531aData according to IEC 60747and per diode unless otherwise specified

Outlines SOT-227B (minibloc) IXYS reserves the right to change limits, conditions and dimensions. 20100531aData according to IEC 60747and per diode unless otherwise specified

0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 0 200 400 600 800 1000 0.0 0.3 0.6 0.9 1.2 200 600 100004 0 0 8 0 0 0001001 500 1000 1500 2000 2500 3000 DSEP 2x31-06A VFR tfr IRM Qr IF [A] VF [V] Qr [nC] -diF /dt [A/µs] IRM [A] -diF /dt [A/µs] Kf TVJ [°C] trr [ns] -diF /dt [A/µs] trr [µs] -diF /dt [A/µs] VFR [V] t [s] ZthJC [K/W] Fig. 1 Forward current I F vs. VF Fig. 2 Reverse recovery charge Qr versus -diF /dt Fig. 3 Peak reverse current IRM versus -diF /dt Fig. 4 Dynamic parameters Qr,I RM versus TVJ Fig. 5 Recovery time trr versus -diF /dt Fig. 6 Peak forward voltage VFR and tfr versus diF /dt Fig. 7 Transient thermal resistance junction to case TVJ = 150°C 100°C 25°C IF = 60 A 30 A 15 A IF =6 0 A 30 A 15 A TVJ = 100°C VR =3 0 0 V TVJ =1 0 0 ° C VR = 300 V TVJ =1 0 0 ° C VR =3 0 0V TVJ =1 0 0 ° C IF =3 0 A IF =6 0 A 30 A 15 A Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 0.436 0.0055 2 0.482 0.0092 3 0.117 0.0007 4 0.115 0.0418 IXYS reserves the right to change limits, conditions and dimensions. 20100531aData according to IEC 60747and per diode unless otherwise specified