L507 IXYS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Features

  • International standard package miniBLOC
  • Isolation voltage 2500 V~
  • UL registered E 72873
  • 2 independent FRED in 1 package
  • Planar passivated chips
  • Very short recovery time
  • Extremely low switching losses
  • Low IRM -values
  • Soft recovery behaviour

Applications

  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode in converters and motor control circuits
  • Rectifiers in switch mode power supplies (SMPS)
  • Inductive heating
  • Uninterruptible power supplies (UPS)
  • Ultrasonic cleaners and welders Advantages
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf miniBLOC, SOT-227 B Pulse test:① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. IFAV = 2x 100 A VRRM = 400 V trr = 30 ns VRSM VRRM Type V V 400 400 DSEP 2x 101-04A Symbol Conditions Maximum Ratings IFRMS 100 A IFAVM TC = 60°C; rectangular, d = 0.5 100 A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 1000 A EAS TVJ = 25°C; non-repetitive 2 mJ IAS = 4 A; L = 180 µH IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.4 A TVJ -40...+150 °C TVJM 150 °C Tstg -40...+150 °C Ptot TC = 25°C 200 W VISOL 50/60 Hz, RMS 2500 V~ IISOL ≤ 1 mA M d mounting torque (M4) 1.1-1.5/9-13 Nm/lb.in. terminal connection torque (M4) 1.1-1.5/9-13 Nm/lb.in. Weight typical 30 g Symbol Conditions Characteristic Values typ. max. IR ① VR = VRRM ;T VJ = 25°C 1 mA TVJ = 150°C 4 mA VF ② IF = 100 A; TVJ = 125°C 1.24 V TVJ = 25°C 1.54 V R thJC 0.6 K/W R thCH with heatsink compound 0.1 K/W trr IF = 1 A; -di/dt = 400 A/µs; 30 ns VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 200 A; -diF/dt = 100 A/µs 5.5 6.8 A TVJ = 100°C DSEP 2x 101-04A 313

© 2003 IXYS All rights reserved2 - 2 200 600 10000 400 800 100 1000 400 800 1200 1600 2000 2400 200 600 10000 400 800 100 120 140 160 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 04 0 8 0 1 2 0 1 6 0 0.0 0.5 1.0 1.5 2.0 Kf TVJ -diF/dt t s K/W 0 200 400 600 800 1000 0.00 0.25 0.50 0.75 1.00 1.25 1.50 VFR diF/dt V 100 150 200 250 300 IRMQ r IF A VF -diF/dt -diF/dt A/µs A V nC A/µs A/µs trr ns tfr ZthJC A/µs µs DSEP 2x101-04A TVJ = 100°C VR = 200 V TVJ = 100°C VR = 200 V IF = 200 A IF = 100 A IF = 50 A IF = 200 A IF = 100 A IF = 50 A IF = 200 A IF = 100 A IF = 50 A TVJ = 100°C VR = 200 V IRM Q r tfr VFR TVJ = 100°C IF = 100 A TVJ = 150°C TVJ = 100°C TVJ = 25°C Fig. 3 Typ. peak reverse current IRM versus -diF/dt Fig. 2 Typ. reverse recovery charge Q r versus -diF/dt Fig. 1 Forward current IF versus VF Fig. 4 Typ. dynamic parameters Q r, IRM versus TVJ Fig. 5 Typ. recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Fig. 7 Transient thermal resistance junction to case Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 0.212 0.0055 2 0.248 0.0092 3 0.063 0.0007 4 0.077 0.0391 DSEP 2x 101-04A 313