DSEP29-06AS

DSEP29-06A IXYS | Alldatasheet

Document overview

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• PDF pages: 3

Technical content

Features

International standard package  Planar passivated chips  Very short recovery time l Extremely low switching losses  Low I RM-values  Soft recovery behaviour  Epoxy meets UL 94V-0

Applications

 Antiparallel diode for high frequency switching devices  Antisaturation diode  Snubber diode  Free wheeling diode in converters and motor control circuits  Rectifiers in switch mode power supplies (SMPS)  Inductive heating  Uninterruptible power supplies (UPS)  Ultrasonic cleaners and welders Advantages  Avalanche voltage rated for reliable operation  Soft reverse recovery for low EMI/RFI  Low I RM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified. A = Anode, C = Cathode, TAB = Cathode C A TO-220 AC C (TAB) C (TAB)A A TO-263 CA DSEP 29-06A DSEP 29-06AS DSEP 29-06B

© 2004 IXYS All rights reserved 2 - 3 417IXYS reserves the right to change limits, test conditions and dimensions. DSEP 29-06A DSEP 29-06AS 200 600 10000 400 800 100 110 120 130 0.001 0.01 0.1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 Kf TVJ -diF/dt t s K/W 0 200 400 600 800 1000 0.0 0.3 0.6 0.9 1.2 VFR diF/dt V 200 600 10000 400 800 100 1000 500 1000 1500 2000 2500 3000 IRMQr IF A VF -diF/dt -diF/dt A/µs A V nC A/µs A/µs trr ns tfr ZthJC A/µs µs DSEP 29-06A IF= 60A IF= 30A IF= 15A TVJ= 100°C VR = 300V TVJ= 100°C IF = 30A Fig. 3 Peak reverse current I RM versus -diF/dt Fig. 2 Reverse recovery charge Q r versus -diF/dt Fig. 1 Forward current I F versus VF TVJ= 100°C VR = 300V TVJ= 100°C VR = 300V IF= 60A IF= 30A IF= 15A Qr IRM Fig. 4 Dynamic parameters Q r, IRM versus TVJ Fig. 5 Recovery time t rr versus -diF/dt Fig. 6 Peak forward voltage V FR and tfr versus diF/dt IF= 60A IF= 30A IF= 15A tfr VFR Fig. 7 Transient thermal resistance junction to case Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 0.502 0.0052 2 0.193 0.0003 3 0.205 0.0162 TVJ=25°C TVJ=100°C TVJ=150°C NOTE: Fig. 2 to Fig. 6 shows typical values

© 2004 IXYS All rights reserved 3 - 3 417IXYS reserves the right to change limits, test conditions and dimensions. DSEP 29-06B Fig. 3 Peak reverse current I RM versus -diF/dt Fig. 2 Reverse recovery charge Q r versus -diF/dt Fig. 1 Forward current I F versus VF Fig. 4 Dynamic parameters Q r, IRM versus TVJ Fig. 5 Recovery time t rr versus -diF/dt Fig. 6 Peak forward voltage V FR and tfr versus diF/dt Fig. 7 Transient thermal resistance junction to case Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 0.502 0.0052 2 0.193 0.0003 3 0.205 0.0162NOTE: Fig. 2 to Fig. 6 shows typical values 200 600 10000 400 800 100 120 140 0.001 0.01 0.1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 Kf TVJ C -diF/dt t s K/W 0 200 400 600 800 1000 0.00 0.05 0.10 0.15 0.20 0.25 0.30 VFR diF/dt V 200 600 10000 400 800 100 1000 100 150 200 250 300 350 01234 100 IRM Qr IF A VF -diF/dt -diF/dt A/µs A V nC A/µs A/µs trr ns tfr ZthJC A/µs µs TVJ = 150°C TVJ = 100°C TVJ = 25°C IRM Qr TVJ = 100°C VR = 300 V TVJ = 100°C VR = 300 V TVJ = 100°C VR = 300 V IF = 60 A IF = 30 A IF = 15 A IF = 60 A IF = 30 A IF = 15 A IF = 60 A IF = 30 A IF = 15 A TVJ = 100°C IF = 30 A DSEP 30-06B tfr VFR