DSEP29-03A IXYS | Alldatasheet

Document overview

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Technical content

Features

G International standard package G Planar passivated chips G Very short recovery time G Extremely low switching losses G Low IRM-values G Soft recovery behaviour G Epoxy meets UL 94V-0

Applications

G Antiparallel diode for high frequency switching devices G Antisaturation diode G Snubber diode G Free wheeling diode in converters and motor control circuits G Rectifiers in switch mode power supplies (SMPS) G Inductive heating G Uninterruptible power supplies (UPS) G Ultrasonic cleaners and welders Advantages G Avalanche voltage rated for reliable operation G Soft reverse recovery for low EMI/RFI G Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf C A A = Anode, C = Cathode, TAB = Cathode C A TO-220 AC C (TAB) Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. DSEP 29-03A IFAV = 30 A VRRM = 300 V trr = 30 ns VRSM VRRM Type V V 300 300 DSEP 29-03A Symbol Conditions Maximum Ratings IFRMS A IFAVM TC = 145°C; rectangular, d = 0.5 A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 300 A EAS TVJ = 25°C; non-repetitive 1.2 mJ IAS = 3 A; L = 180 µH IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.3 A TVJ -55...+175 TVJM 175 Tstg -55...+150 Ptot TC = 25°C 165 W Md mounting torque Nm Weight typical g Symbol Conditions Characteristic Values typ. max. IR x TVJ = 25°C VR = VRRM 250 A TVJ = 150°C VR = VRRM mA VF y IF = 30 A; TVJ = 150°C 0.93 V TVJ = 25°C 1.26 V RthJC 0.9 K/W RthCH 0.5 K/W trr IF = 1 A; -di/dt = 200 A/s; ns VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 50 A; -diF/dt = 100 A/s A TVJ = 100°C 008

© 2000 IXYS All rights reserved 2 - 2 NOTE: Fig. 2 to Fig. 6 shows typical values 200 600 1000 400 800 0.00001 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 120 160 0.4 0.6 0.8 1.0 1.2 1.4 Kf TVJ -diF/dt t s K/W 200 400 600 800 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VFR diF/dt V 200 600 1000 400 800 100 1000 200 400 600 800 0.0 0.5 1.0 1.5 IRM Qr IF A VF -diF/dt -diF/dt A/ms A V nC A/ms A/ms trr ns tfr A/ms µs DSEP 29-03A ZthJC TVJ=150°C TVJ=100°C TVJ= 25°C IF = 60A IF = 30A IF = 15A TVJ = 100°C VR = 150V TVJ = 100°C VR = 150V TVJ = 100°C VR = 150V TVJ = 100°C IF = 30A VFR tfr IRM Qr IF = 60A IF = 30A IF = 15A IF = 60A IF = 30A IF = 15A Fig. 3 Peak reverse current IRM versus -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt Fig. 1 Forward current IF versus VF Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Fig. 7 Transient thermal resistance junction to case Constants for ZthJC calculation: i Rthi (K/W) ti (s) 0.502 0.005 0.193 0.0003 0.205 0.016 DSEP 29-03A 008