DSEP15-06B IXYS | Alldatasheet
Document overview
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Technical content
Features
G International standard package G Planar passivated chips G Very short recovery time G Extremely low switching losses G Low IRM-values G Soft recovery behaviour G Epoxy meets UL 94V-0
Applications
G Antiparallel diode for high frequency switching devices G Antisaturation diode G Snubber diode G Free wheeling diode in converters and motor control circuits G Rectifiers in switch mode power supplies (SMPS) G Inductive heating G Uninterruptible power supplies (UPS) G Ultrasonic cleaners and welders Advantages G Avalanche voltage rated for reliable operation G Soft reverse recovery for low EMI/RFI G Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see pages D4 - 85-86 CA A = Anode, C = Cathode, TAB = Cathode C A TO-220 AC C (TAB) Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 µs, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. DSEP 15-06B IFAV = 15 A VRRM = 600 V trr = 25 ns VRSM VRRM Type V V 600 600 DSEP 15-06B Symbol Conditions Maximum Ratings IFRMS 35 A IFAVM TC = 130°C; rectangular, d = 0.5 15 A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 110 A EAS TVJ = 25°C; non-repetitive; IAS = 1 A; L = 100 µH 0.1 mJ L = 20 mH 20 mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A TVJ -55...+175 °C TVJM 175 °C Tstg -55...+150 °C Ptot TC = 25°C 95 W Weight typical 2 g Symbol Conditions Characteristic Values typ. max. IR x TVJ = 25°C V R = VRRM 100 µA TVJ = 150°C V R = VRRM 0.5 mA VF y IF = 15 A; T VJ = 150°C 1.55 V TVJ = 25°C 2.52 V RthJC 1.6 K/W RthCH 0.5 K/W trr IF = 1 A; -di/dt = 100 A/µs; 25 30 ns VR = 30 V; TVJ = 25°C IRM VR = 100 V; I F = 25 A; -diF/dt = 100 A/µs2 . 6 A TVJ = 100°C 147 Preliminary data