DSEP12-12B IXYS | Alldatasheet

Document overview

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Technical content

Features

  • International standard package
  • Planar passivated chips
  • Very short recovery time
  • Extremely low switching losses
  • Low IRM-values
  • Soft recovery behaviour
  • Epoxy meets UL 94V-0

Applications

  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode in converters and motor control circuits
  • Rectifiers in switch mode power supplies (SMPS)
  • Inductive heating
  • Uninterruptible power supplies (UPS)
  • Ultrasonic cleaners and welders Advantages
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low I RM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 20°C; rectangular, d = 0.5 A A IFSM TVJ = 45°C; tp = 0 ms (50 Hz), sine 90 A EAS TVJ = 25°C; non-repetitive IAS = 9 A; L = 80 µH 8.7 mJ IAR VA = .25·VR typ.; f = 0 kHz; repetitive 0.9 A TVJ TVJM Tstg -55...+75 -55...+50 Ptot TC = 25°C 95 W Weight typical 2 g A C TO-220 AC A = Anode, C = Cathode, TAB = Cathode C (TAB) C A VRSM V VRRM V Type 200 200 DSEP 2-2B C G D J K H F BA M N LQ E

© 2008 IXYS All rights reserved 2 - 2 2008046a DSEP12-12B IXYS reserves the right to change limits, test conditions and dimensions. 375 625 875 1125 1375250 500 750 1000 1250 1500 100 200 300 400 500 1 10 100 1000 10000 0.0 0.4 0.8 1.2 1.6 2.0 t [ms] 0 200 400 600 800 1000 1200 100 100 200 300 400 500 VFR [V] 375 625 875 1125 1375250 500 750 1000 1250 1500 250 500 750 1000 1250 1500 0 1 2 3 4 IRM [A] QR [nC] IF [A] VF [V] trr [ns]ZthJC [K/W] -diF /dt [A/Ps] DSEP 12-12B TJ = 25°C TJ = 125°C 150°C 250 500 750 1000 1250 1500 400 800 1200 1600 2000 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8KF TVJ [°C] -diF /dt [A/Ps] -diF /dt [A/Ps] -diF /dt [A/Ps] tfr [ns] Erec [µJ] -diF /dt [A/Ps] IF = 30 A 15 A 7.5 A 7.5 A IRM Qrr VFR tfr IF = 30 A 15 A 7.5 A 15 A 7.5 A 15 A IF = 30 A IF = 30 A Fig. Forward current IF versus VF Fig.2 Typ. reverse recovery charge Qrr versus -diF/dt Fig. 3 Typ. peak reverse current IRM versus -diF /dt Fig.4 Dynamic parameters QRR, IRM versus TVJ Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 7 Typ. recovery energy Erec versus -diF /dt Fig. 6 Typ. peak forward voltage VFR and tfr versus -diF /dt Fig. 8 Transient thermal resistance junction to case