DSEK30 IXYS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
l International standard package JEDEC TO-247 AD l Planar passivated chips l Very short recovery time l Extremely low switching losses l Low IRM -values l Soft recovery behavior l Epoxy meets UL 94V-0 flammability classification
Applications
l Rectifiers in switch mode power supplies (SMPS) l Uninterruptible power supplies (UPS) l Ultrasonic cleaners and welders Advantages l High reliability circuit operation l Low voltage peaks for reduced protection circuits l Low noise switching l Low losses l Operating at lower temperature or space saving by reduced cooling C (TAB) 94538A
© 1997 IXYS All rights reserved 37 DSEK 30, 1200 V 1 10 100 1000 trr 0 200 400 600 0.2 0.4 0.6 0.8 1.0 0 200 400 600 01234 µC 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 0 40 80 120 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 s Zt hJC K/W 0 200 400 600 TVJ=125°C IF=30A -diF/dt tfr VFR tfr ns 200 400 600 800 1000 1200 V VFR µs -diF/dt typ. max. Kf Q R IRM °CTVJ A typ. -diF/dt IRM -diF/dt Q rr V VF IF TVJ=150°C TVJ=100°C TVJ= 25°C A IF=15A IF=30A IF=60A IF=30A VR= 540V TVJ=100°C max. typ. IF=15A IF=30A IF=60A IF=30A TVJ=100°C VR=540V TVJ=100°C IF=15A IF=30A IF=60A IF=30A A/µsA/µs A/µs A/µs t max. VR= 540V Fig. 1 Forward current Fig. 2 Recovery charge versus -di F/dt. Fig. 3 Peak reverse current versus versus voltage drop. -di F/dt. Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage versus junction temperature. -di F/dt. Fig. 7 Transient thermal impedance junction to case M Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 N Dimensions