DSEI60-12A IXYS | Alldatasheet

Document overview

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Technical content

Features

G International standard package JEDEC TO-247 AD G Planar passivated chips G Very short recovery time G Extremely low switching losses G Low IRM -values G Soft recovery behaviour G Epoxy meets UL 94V-0

Applications

G Antiparallel diode for high frequency switching devices G Anti saturation diode G Snubber diode G Free wheeling diode in converters and motor control circuits G Rectifiers in switch mode power supplies (SMPS) G Inductive heating and melting G Uninterruptible power supplies (UPS) G Ultrasonic cleaners and welders Advantages G High reliability circuit operation G Low voltage peaks for reduced protection circuits G Low noise switching G Low losses G Operating at lower temperature or space saving by reduced cooling Fast Recovery Epitaxial Diode (FRED) A C TO-247 AD C C A A = Anode, C = Cathode 036

© 2000 IXYS All rights reserved 2 - 2 DSEI 60, 1200 V Dimensions Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 2.2 2.54 0.087 0.102 0 200 400 600 800 1000 0.0 0.2 0.4 0.6 0.8 1.0 10 100 1000 0 200 400 600 800 1000 0 200 400 600 800 1000 TVJ=125°C diF/dt tfr VFR tfr ns 200 400 600 800 1000 1200 A/µs V VFR VR =540V TVJ=100°C -diF/dt µs trr typ. 0 40 80 120 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Kf Q R IRM TJ TVJ=100°CA max. typ. VR =540V IRM -diF/dt µC Q r typ. max. VR = 540V 01234 TVJ=100°C V VF IF TVJ=150°C TVJ=100°C TVJ= 25°C A IF=60A IF=120A IF=60A IF=30A IF=60A A/µs IF=30A IF=60A IF=120A IF=60A IF=30A IF=60A IF=60A IF=120A A/µsA/µs -diF/dt max. Fig. 7 Transient thermal impedance junction to case. Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage junction temperature. versus di F/dt. Fig. 1 Forward current Fig. 2 Recovery charge versus -di F/dt. Fig. 3 Peak reverse current versus versus voltage drop. -di F/dt.