DSEI30-10AR IXYS | Alldatasheet

Document overview

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Technical content

Features

G International standard package JEDEC TO-247 AD G Planar passivated chips G Very short recovery time G Extremely low switching losses G Low IRM -values G Soft recovery behavior G Epoxy meets UL 94V-0 G Version AR isolated and UL registered E153432

Applications

G Antiparallel diode for high frequency switching devices G Anti saturation diode G Snubber diode G Free wheeling diode in converters and motor control circuits G Rectifiers in switch mode power supplies (SMPS) G Inductive heating and melting G Uninterruptible power supplies (UPS) G Ultrasonic cleaners and welders Advantages G High reliability circuit operation G Low voltage peaks for reduced protection circuits G Low noise switching G Low losses G Operating at lower temperature or space saving by reduced cooling Fast Recovery Epitaxial Diode (FRED) A C 026 A = Anode, C = Cathode TO-247 AD ISOPLUS 247 TM Version A Version AR A C (TAB) C A C Isolated back surface ** Patent pending

© 2000 IXYS All rights reserved 2 - 2 DSEI 30, 1000 V Fig. 1 Forward current Fig. 2 Recovery charge versus -di F/dt. Fig. 3 Peak reverse current versus versus voltage drop. -di F/dt. Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage junction temperature. versus di F/dt. Fig. 7 Transient thermal impedance junction to case. Dimensions Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 2.2 2.54 0.087 0.102