DSEI2X61-12P IXYS | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
Features
2 independent FRED in 1 package Isolation voltage 3000 V~ Planar passivated chips Leads suitable for PC board soldering Very short recovery time Soft recovery behaviour
Applications
Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability Low noise switching Small and light weight Fast Recovery Epitaxial Diode (FRED) 139 VRSM VRRM Type V V 1200 1200 DSEI 2x 61-12P IXYS reserves the right to change limits, test conditions and dimensions
© 2001 IXYS All rights reserved 2 - 2 0 200 400 600 800 1000 0.0 0.2 0.4 0.6 0.8 1.0 10 100 1000 0 200 400 600 800 1000 0 200 400 600 800 1000 TVJ=125°C diF/dt tfr VFR tfr ns 200 400 600 800 1000 1200 A/µs V VFR VR=540V TVJ=100°C -diF/dt µs trr typ. 04 0 8 0 1 2 0 1 6 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Kf QR IRM TJ TVJ=100°CA max. typ. VR=540V IRM -diF/dt µC Qr typ. max. VR= 540V 01234 TVJ=100°C V VF IF TVJ=150°C TVJ=100°C TVJ= 25°C A IF=60A IF=120A IF=60A IF=30A IF=60A A/µs IF=30A IF=60A IF=120A IF=60A IF=30A IF=60A IF=60A IF=120A A/µsA/µs -diF/dt max. DSEI 2x 61-12P Fig. 7 Transient thermal impedance junction to case. Fig. 1 Forward current Fig. 2 Recovery charge versus -di F/dt. Fig. 3 Peak reverse current versus versus voltage drop. -di F/dt. Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -di F/dt. Fig. 6 Peak forward voltage junction temperature. versus di F/dt. Dimensions