DSEI2X61-10B IXYS | Alldatasheet

Document overview

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Technical content

Features

International standard package miniBLOC (ISOTOP compatible)

  • Isolation voltage 2500 V~
  • 2 independent FRED in 1 package
  • Planar passivated chips
  • Very short recovery time
  • Extremely low switching losses
  • Low I RM -values
  • Soft recovery behaviour

Applications

  • Antiparallel diode for high frequency switching devices
  • Anti saturation diode
  • Snubber diode
  • Free wheeling diode in converters and motor control circuits
  • Rectifi ers in switch mode power supplies (SMPS)
  • Inductive heating and melting
  • Uninterruptible power supplies (UPS)
  • Ultrasonic cleaners and welders Advantages
  • High reliability circuit operation
  • Low voltage peaks for reduced protection circuits
  • Low noise switching
  • Low losses
  • Operating at lower temperature or space saving by reduced cooling Fast Recovery Epitaxial Diode (FRED) IFAVM = 2x 60 A VRRM = 1000 V trr = 35 ns miniBLOC, SOT-227 B E72873

© 2017 IXYS All rights reserved 2 - 3 IXYS reserves the right to change limits, test conditions and dimensions. 20170315a DSEI 2x 61-10B B S D C E F G A H O R U QP L V Nut M4 DIN 934 Lens Head Screw M4x8 DIN 7985 J K T M W N Z min max min max A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 37.80 38.23 1.488 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.74 0.84 0.029 0.033 M 12.50 13.10 0.492 0.516 N 25.15 25.42 0.990 1.001 O 1.95 2.13 0.077 0.084 P 4.95 6.20 0.195 0.244 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.167 S 4.55 4.85 0.179 0.191 T 24.59 25.25 0.968 0.994 U -0.05 0.10 -0.002 0.004 V 3.20 5.50 0.126 0.217 W 19.81 21.08 0.780 0.830 Z 2.50 2.70 0.098 0.106 Dim. Millimeter Inches 1 2 miniBLOC, SOT-227 B

© 2017 IXYS All rights reserved 3 - 3 IXYS reserves the right to change limits, test conditions and dimensions. 20170315a DSEI 2x 61-10B 0 200 400 600 800 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 1000 0 200 400 600 800 1000 0 200 400 600 800 1000 200 400 600 800 1000 0 40 80 120 160 0.4 0.6 0.8 1.0 1.2 1.4 QR IRM 0 1 2 3 100 120 140 160 180 VF [V] IF [A] Qr [•C] -diF /dt [A/ •s] -di F /dt [A/ •s] IRM [A] Fig. 1 Forward current I F versus V F Fig. 2 Typ. recovery charge Q r versus -di F /dt Fig. 3 Typ. peak reverse current I RM versus -di F /dt KF TJ [°C] -di F /dt [A/ •s] trr [•s] -diF /dt [A/ •s] VFR [V] Fig. 4 Typ. dyn. parameters vs. junction temperature Fig. 5 Typ. recovery time t rr versus -di F /dt Fig. 6 Typ. peak forward voltage V FR versus -di F /dt 0.0001 0.001 0.01 0.1 1 10 0.01 0.1 t [ms] ZthJC [K/W] Fig. 7 Transient thermal impedance junction to case VFR tfr TVJ = 25°C 100°C 150°C IF = 60 A 120 A 60 A 30 A TVJ = 100°C VR = 540 V max. typ. IF = 60 A 120 A 60 A 30 A TVJ = 100°C VR = 540 V typ. max. TVJ = 100°C VR = 540 V IF = 60 A 120 A 60 A 30 A max. typ. TVJ = 125°C IF = 60 A tfr [ns]