DSEI2X101-12 IXYS | Alldatasheet
Document overview
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Technical content
Features
2 independent FRED in 1 package Isolation voltage 3000 V~ Planar passivated chips Leads suitable for PC board soldering Very short recovery time Soft recovery behaviour
Applications
Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability Low noise switching Small and light weight Fast Recovery Epitaxial Diode (FRED) 139 VRSM VRRM Type V V 1200 1200 DSEI 2x 101-12P IXYS reserves the right to change limits, test conditions and dimensions AC-1 IK-10 LN-9 VX-18
© 2001 IXYS All rights reserved 2 - 2 DSEI 2x 101-12P 200 600 10000 400 800 200 250 300 350 400 450 500 0.001 0.01 0.1 1 10 0.1 0 40 80 120 160 0.4 0.6 0.8 1.0 1.2 1.4 Kf TVJ -diF/dt t s K/W 0 200 400 600 800 1000 0.0 0.5 1.0 1.5 VFR diF/dt V 200 600 10000 400 800 100 140 120 100 1000 100 125 150 IRM Qr IF A VF -diF/dt -diF/dt A/µs A V µC A/µs A/µs trr ns tfr ZthJC A/µs µs 0.05 0.1 0.2 0.3 0.5 D=0.7 0.05 DSEI 2x101-12 Single Pulse IF=200A IF=100A IF= 50A TVJ= 100°C VR = 600V TVJ= 100°C IF = 100A Fig. 3 Peak reverse current I RM versus -diF/dt Fig. 2 Reverse recovery charge Q r versus -diF/dt Fig. 1 Forward current I F versus VF TVJ=100°C TVJ=150°C TVJ= 100°C VR = 600V TVJ= 100°C VR =600V IF=200A IF=100A IF= 50A Qr IRM Fig. 4 Dynamic parameters Q r, IRM versus TVJ Fig. 5 Recovery time t rr versus -diF/dt Fig. 6 Peak forward voltage V FR and tfr versus diF/dt IF=200A IF=100A IF= 50A tfr VFR Fig. 7 Transient thermal impedance junction to case at various duty cycles TVJ= 25°C Dimensions in mm (1mm = 0.0394“)