DSEI120-12A IXYS | Alldatasheet
Document overview
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Technical content
Features
G International standard package JEDEC TO-247 AD G Planar passivated chips G Very short recovery time G Extremely low switching losses G Low IRM -values G Soft recovery behaviour G Epoxy meets UL 94V-0
Applications
G Antiparallel diode for high frequency switching devices G Anti saturation diode G Snubber diode G Free wheeling diode in converters and motor control circuits G Rectifiers in switch mode power supplies (SMPS) G Inductive heating and melting G Uninterruptible power supplies (UPS) G Ultrasonic cleaners and welders Advantages G High reliability circuit operation G Low voltage peaks for reduced protection circuits G Low noise switching G Low losses G Operating at lower temperature or space saving by reduced cooling Dimensions See DSEI 60-12 on page D5 - 27 Fast Recovery Epitaxial Diode (FRED) A TO-247 AD C C A A = Anode, C = Cathode 009
© 2000 IXYS All rights reserved 2 - 2 DSEI 120, 1200 V 200 600 10000 400 800 200 250 300 350 400 450 500 0.001 0.01 0.1 1 10 0.01 0.1 0 40 80 120 160 0.4 0.6 0.8 1.0 1.2 1.4 Kf TVJ -diF/dt t s K/W 0 200 400 600 800 1000 0.0 0.5 1.0 1.5 VFR diF/dt V 200 600 10000 400 800 100 120 100 1000 100 125 150 IRMQ rIF A VF -diF/dt -diF/dt A//c109 s A V µC A//c109 s A//c109 s trr ns tfr ZthJC A//c109 s µs 0.05 0.3 0.5 D=0.7 0.2 0.01 DSEI 120-12 Single Pulse IF=140A IF= 70A IF= 35A TVJ= 100°C VR = 600V TVJ= 100°C IF = 100A Fig. 3 Peak reverse current IRM versus -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt Fig. 1 Forward current IF versus VF TVJ=100°C TVJ=150°C TVJ= 100°C VR = 600V TVJ= 100°C VR = 600V IF=140A IF= 70A IF= 35A Q r IRM Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt IF=140A IF= 70A IF= 35A tfr VFR Fig. 7 Transient thermal resistance junction to case Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 0.017 0.00038 2 0.0184 0.0026 3 0.1296 0.0387 4 0.185 0.274 TVJ= 25°C