DSEE30-12A IXYS | Alldatasheet

Document overview

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Technical content

Features

  • Planar passivated chips
  • Very short recovery time
  • Extremely low switching losses
  • Low IRM-values
  • Soft recovery behaviour
  • Epoxy meets UL 94V-0

Applications

  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode in converters and motor control circuits
  • Rectifiers in switch mode power supplies (SMPS)
  • Inductive heating
  • Uninterruptible power supplies (UPS)
  • Ultrasonic cleaners and welders Advantages
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch IFAV = 30 A VRRM = 1200 V c trr = 30 ns VRRMc VRRM Type V V 1200 600 DSEE30-12A Symbol Conditions Maximum Ratings IFRMS 60 A IFAVM c TC = 90°C; rectangular, d = 0.5 30 A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 200 A EAS TVJ = 25°C; non-repetitive 0.2 mJ IAS = 1.3 A; L = 180 µH IAR VA = 1.5· VR typ.; f = 10 kHz; repetitive 0.1 A TVJ -55...+175 °C TVJM 175 °C Tstg -55...+150 °C TL 1.6 mm (0.063 in) from case for 10 s 260 °C Ptot TC = 25°C 165 W Md Mounting Torque 0.9/6 Nm/ lb.in. Weight typical 2 g Symbol Conditions Characteristic Values typ. max. IR cd TVJ = 25°C V R = VRRM 200 µA TVJ = 150°C V R = VRRM 2m A VF e IF = 30 A; T VJ = 125°C 1.75 V TVJ = 25°C 2.5 V RthJC 0.9 K/W RthCH 0.25 K/W trr IF = 1 A; -di/dt = 200 A/µs; 30 ns VR = 30 V IRM VR = 100 V; I F = 50 A; -diF/dt = 100 A/µs 4 A TVJ = 100°C DS98962 (10/02) © 2002 IXYS All rights reserved DSEE30-12AADVANCE TECHNICAL INFORMATION 1 2 3 Notes: Data given for T VJ = 25OC and per diode unless otherwise specified c Diodes connected in series d Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 % e Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 % IXYS reserves the right to change limits, test conditions and dimensions. 1 2 3 Notes
  • Please see DSEP 30-06A Data Sheet for characteristic curves. TO-247 AD

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXYS reserves the right to change limits, test conditions, and dimensions. Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L 1 4.50 .177 ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC e ∅ P TO-247 AD Outline