DSEE29-12CC IXYS | Alldatasheet

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Technical content

Features / Advantages: typ. max. IFSM IR A V 200 I A VF 1.62 R 0.90 K/W VR = 1 2 3 min. t = 10 ms Applications: VRRM V600 500TVJV° C = TVJ °C=m A 1 Package: Part number VR = TVJ =° CIF =A V TC = 130°Cd = Ptot 165 WTC °C= TVJ 175 °C-55 V I RRM = 600 TVJ = 45°C DSEE29-12CC V A 600 V600 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current Conditions Unit 1.95 TVJ °C=2 5 CJ junction capacitance V = V; T 150 VF0 V1.00TVJ = 175°C rF 10 f = 1 MHz = °C 25 mΩ V1.27TVJ =° CIF =A V 1.58 IF =A 60 IF =A 60 threshold voltage slope resistance for power loss calculation only Backside: isolated

17 ATVJ =° C

(50 Hz), sine t rr = 35 ns

  • Housing: High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg ISOPLUS220
  • rIndustry standard outline
  • rDCB isolated backside
  • rIsolation Voltage 3000 V
  • rEpoxy meets UL 94V-0
  • rRoHS compliant R VJ IRM max. reverse recovery current IF =A ;30 T= 100°CVJ -diF =A / µ s600/dtt rr VR =V 300 TVJ =° C25 T= 100°CVJ µA 26400 pF thermal resistance junction to casethJC rectangular 0.5
  • Planar passivated chips
  • Very low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS) FAV average forward current FAV 150 IXYS reserves the right to change limits, conditions and dimensions. 20110215aData according to IEC 60747and per diode unless otherwise specified

2011 IXYS all rights reserved

1.0 3.0 IRMS Aper terminal 35 R thCH K/W0.50 Tstg °C150storage temperature -55 Weight g2 Symbol Definition Ratings typ. max.min.Conditions RMS current thermal resistance case to heatsink Unit FC N60mounting force with clip 20 Ordering Delivering Mode Base Qty Code Key Standard Part Name DSEE29-12CC 500694Tube 50 Product Marking Date Code Part No. Logo Order Code IXYS abcd UL listed DSEE30-12A TO-247AD (3) Similar Part Package Marking on Product DSEE29-12CC 600 Voltage Class VISOL V3600t = 1 second V3000t = 1 minute isolation voltage dSpp/App mm mm creepage | striking distance on surface | through air terminal to terminal dSpb/Apb creepage | striking distance on surface | through air terminal to backside IXYS reserves the right to change limits, conditions and dimensions. 20110215aData according to IEC 60747and per diode unless otherwise specified

T 12 3 EA E 1 D L 2x b2 2x e 3x b c W Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoffoberfläche der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side Die Gehäuseabmessungen entsprechen dem Typ TO-273 gemäß JEDEC außer D und D1 This drawing will meet all dimensions requiarement of JEDEC outline TO-273 except D and D1. m i nm a xm i nm a x A 4.00 5.00 0.157 0.197 A1 2.50 3.00 0.098 0.118 A2 1.60 1.80 0.063 0.071 b 0.90 1.30 0.035 0.051 b2 2.35 2.55 0.093 0.100 b4 1.25 1.65 0.049 0.065 c 0.70 1.00 0.028 0.039 D 15.00 16.00 0.591 0.630 D1 12.00 13.00 0.472 0.512 D2 1.10 1.50 0.043 0.059 D3 14.90 15.50 0.587 0.610 E 10.00 11.00 0.394 0.433 E1 7.50 8.50 0.295 0.335 e 2.54 BSC 0.100 BSC L 13.00 14.50 0.512 0.571 L1 3.00 3.50 0.118 0.138 T° 42.5 47.5 W - 0.1 - 0.004 Dim. Millimeters Inches Outlines ISOPLUS220 IXYS reserves the right to change limits, conditions and dimensions. 20110215aData according to IEC 60747and per diode unless otherwise specified

0.001 0.01 0.1 1 10 0.01 0.1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 t 0 200 400 600 800 1000 0.0 0.3 0.6 0.9 1.2 200 600 10000 400 800 0001001 500 1000 1500 2000 2500 3000 A DSEE 29-12CC TVJ =2 5 ° C IRM Qr VFR TVJ = 100°C VR =3 0 0V TVJ = 100°C VR = 300 V trr IF = 60 A IF = 30 A IF = 15 A IF = 60 A IF = 30 A IF = 15 A TVJ = 100°C IF = 30 A IF [A] VF [V] Qr [nC] -diF /dt [A/µs] IRM [A] -diF /dt [A/µs] Kf TVJ [°C] trr [ns] -diF /dt [A/µs] tfr [µs] -diF /dt [A/µs] VFR [V] t [s] ZthJC [K/W] Fig. 1 Forward current I F vs. VF Fig. 2 Typ. reverse recovery charge Qr versus -diF /dt Fig. 3 Typ. peak reverse current IRM versus -diF /dt Fig. 4 Dynamic parameters Qr,I RM versus TVJ Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 6 Typ. peak forward voltage VFR and typ. forward recovery time tfr versus diF /dt Fig. 7 Transient thermal resistance junction to case TVJ = 100°C TVJ = 150°C IF =6 0 A IF =3 0 A IF =1 5 A TVJ = 100°C VR = 300 V Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 0.038 0.00024 2 0.07 0.0036 3 0.245 0.0235 4 0.198 0.1421 5 0.35 0.25 IXYS reserves the right to change limits, conditions and dimensions. 20110215aData according to IEC 60747and per diode unless otherwise specified