DSEE15-12CC IXYS | Alldatasheet

Document overview

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Technical content

Features

z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low cathode to tab capacitance (<15pF) z Planar passivated chips z Very short recovery time z Extremely low switching losses z Low IRM-values z Soft recovery behaviour z Epoxy meets UL 94V-0

Applications

z Antiparallel diode for high frequency switching devices z Antisaturation diode z Snubber diode z Free wheeling diode in converters and motor control circuits z Rectifiers in switch mode power supplies (SMPS) z Inductive heating z Uninterruptible power supplies (UPS) z Ultrasonic cleaners and welders Advantages z Avalanche voltage rated for reliable operation z Soft reverse recovery for low EMI/RFI z Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch IFAV = 15 A VRRM = 1200 V c trr = 35 ns VRRMc VRRM Type V V 1200 600 DSEE15-12CC Symbol Conditions Maximum Ratings IFRMS 35 A IFAVM c TC = 100°C; rectangular, d = 0.5 15 A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 110 A EAS TVJ = 25°C; non-repetitive 0.2 mJ IAS = 1.3 A; L = 180 µH IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A TVJ -55...+175 °C TVJM 175 °C Tstg -55...+150 °C TL 1.6 mm (0.063 in) from case for 10 s 260 °C Ptot TC = 25°C 95 W VISOL 50/60 Hz RMS; IISOL ≤ 1 mA 2500 V~ Weight typical 2 g Symbol Conditions Characteristic Values typ. max. IR d TVJ = 25°C V R = VRRM 100 µA TVJ = 150°C V R = VRRM e 0.5 mA VF IF = 15 A; T VJ = 125°C 1.5 V TVJ = 25°C 2.05 V RthJC 1.6 K/W RthCH 0.6 K/W trr IF = 1 A; -di/dt = 200 A/µs; 35 ns VR = 30 V IRM VR = 100 V; I F = 25 A; -diF/dt = 100 A/µs 4 4.9 A TVJ = 100°C DS98816A(07/03)© 2003 IXYS All rights reserved DSEE15-12CCADVANCE TECHNICAL INFORMATION 1 2 3 ISOPLUS 220 Isolated back surface* E153432

NOTE: 1. Bottom heatsink (Pin 4) is electrically isolated from Pin 1, 2 or 3. 2. Pin connections: 1 - Cathode 2 - Anode/Cathode 3 - Anode