DSEC30-02A IXYS | Alldatasheet

Document overview

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Technical content

Features

  • International standard package
  • Planar passivated chips
  • Very short recovery time
  • Extremely low switching losses
  • Low IRM -values
  • Soft recovery behaviour
  • Epoxy meets UL 94V-0

Applications

  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode in converters and motor control circuits
  • Rectifiers in switch mode power supplies (SMPS)
  • Inductive heating
  • Uninterruptible power supplies (UPS)
  • Ultrasonic cleaners and welders Advantages
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf HiPerFRED TM Epitaxial Diode with common cathode and soft recovery Pulse test:① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. A = Anode, C = Cathode, TAB = Cathode TO-247 AD C A A C (TAB) AC A DSEC 30-02A IFAV = 2x 15 A VRRM = 200 V trr = 25 ns VRSM VRRM Type V V 200 200 DSEC 30-02A Symbol Test Conditions Maximum Ratings IFRMS 50 A IFAVM TC = 150°C; rectangular, d = 0.5 15 A IFAVM TC = 115°C; rectangular, d = 0.5 30 A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 140 A EAS TVJ = 25°C; non-repetitive 0.8 mJ IAS = 2.5 A; L = 180 µH IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.3 A TVJ -55...+175 °C TVJM 175 °C Tstg -55...+150 °C Ptot TC = 25°C 95 W Weight typical 6 g Symbol Test Conditions Characteristic Values typ. max. IR ① TVJ = 25°C VR = VRRM 100 µA TVJ = 150°C VR = VRRM 0.5 mA VF ② IF = 15 A; TVJ = 150°C 0.85 V TVJ = 25°C 1.05 V R thJC 1.6 K/W R thCH 0.25 K/W trr IF = 1 A; -di/dt = 100 A/µs; 25 ns VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs 3.5 4.4 A TVJ = 100°C 311

© 2003 IXYS All rights reserved 2 - 2 200 600 10000 400 800 0.001 0.01 0.1 04 0 8 0 1 2 0 1 6 0 0.6 0.8 1.0 1.2 1.4 Kf TVJ -diF/dt t s K/W 0 200 400 600 800 1000 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 VFR diF/dt V 200 600 10000 400 800 100 1000 100 200 300 400 500 600 700 IRM Q r IF A VF -diF/dt -diF/dt A/µs A V nC A/µs A/µs trr ns A/µs DSEC 30-02A ZthJC TVJ = 150°C TVJ = 100°C TVJ = 25°C VFRtfr IRM Q r IF = 30 A IF = 15 A IF = 7.5 A IF = 30 A IF = 15 A IF = 7.5 A TVJ = 100°C IF = 15 A tfr µs IF = 30 A IF = 15 A IF = 7.5 A TVJ = 100°C VR = 100 V TVJ = 100°C VR = 100 V TVJ = 100°C VR = 100 V and tfr Fig. 7 Transient thermal resistance junction to case DSEC 30-02A 311