DSEC29-06AC IXYS | Alldatasheet

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Low Loss and Soft Recovery High Performance Fast Recovery Diode Common Cathode HiPerFRED 1 2 3 Part number DSEC29-06AC Backside: isolated FAV rrtn s RRM 600 V= V I= A 2x Features / Advantages: Applications: Package:

  • Planar passivated chips
  • Very low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS) ISOPLUS220
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • Soldering pins for PCB mounting
  • Backside: DCB ceramic
  • Reduced weight
  • Advanced power cycling
  • Isolation Voltage: V~3600 IXYS reserves the right to change limits, conditions and dimensions. 20131024bData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

5 ATVJ =° C

IRM max. reverse recovery current IF =A ;15 T= 1 0 0 ° CVJ -diF =A / µ s200/dtt rr VR =V 300 TVJ =° C25 T= 1 0 0 ° CVJ EAS 0.1 mJIAS =A L = µ H IAR AVA =0 . 1 f = 10 kHz1.5·VR typ.: 1 180non-repetitive avalanche energy repetitive avalanche current T= ° C 25VJ V = V Symbol Definition Ratings typ. max. IR V I A VF 2.04 R 1.6 K/ W R min. VRSM V 100T = 25°CVJ T = °CVJ mA0.5V = VR T = 25°CVJI = AF V T = °CC 140 Ptot 95 WT = 25°CC R K/W 600 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 2.25 T = 25°CVJ 150 VF0 V0.99T = °CVJ 175 rF 15 mΩ V1.34T = °CVJI = AF V 1.59 I = AF 30 I = AF 30 threshold voltage slope resistance for power loss calculation only µA 150 VRRM V600max. repetitive reverse blocking voltage T = 25°CVJ CJ 12junction capacitance V = V400 T = 25°Cf = 1 MHzR VJ pF IFSM t = 10 ms; (50 Hz), sine; T = 45°C VJmax. forward surge current V = 0 VR T = °CVJ 175 110 A 600 FAV d =rectangular 0.5 average forward current thermal resistance junction to casethJC thermal resistance case to heatsinkthCH Fast Diode 600 0.50 IXYS reserves the right to change limits, conditions and dimensions. 20131024bData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

Part No. Logo UL listed IXYS abcd Assembly Code AyywwAssembly Line XXXXXXXXX ISOPLUS® DSEC30-06B TO-247AD (3) 600 Package Top °C TVJ °C175virtual junction temperature -55 Weight g2 Symbol Definition typ. max.min.Conditions operation temperature Unit FC N60mounting force with clip 20 V Vt = 1 second Vt = 1 minute isolation voltage mm mm 1.0 3.0 dSpp/App creepage distance on surface | striking distance through air dSpb/Apb terminal to backside I RMS RMS current 35 Aper terminal 150-55 terminal to terminal ISOPLUS220 Similar Part Package Voltage class DSEC30-06A TO-247AD (3) 600 Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering 50/60 Hz, RMS; I ≤ 1 mAISOL DSEC29-06AC 500810Tube 50DSEC29-06ACStandard 3000 3600ISOL Tstg °C150storage temperature -55 threshold voltage V0.99 mΩ V0 max R0 max slope resistance * 12 Equivalent Circuits for Simulation T =VJ I V0 R0 Fast Diode 175 °C* on die level IXYS reserves the right to change limits, conditions and dimensions. 20131024bData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

T 12 3 EA E 1 D L 2x b2 2x e 3x b c W Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoffoberfläche der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side Die Gehäuseabmessungen entsprechen dem Typ TO-273 gemäß JEDEC außer D und D1 This drawing will meet all dimensions requiarement of JEDEC outline TO-273 except D and D1 min max min max A 4.00 5.00 0.157 0.197 A1 2.50 3.00 0.098 0.118 A2 1.60 1.80 0.063 0.071 b 0.90 1.30 0.035 0.051 b2 2.35 2.55 0.093 0.100 b4 1.25 1.65 0.049 0.065 c 0.70 1.00 0.028 0.039 D 15.00 16.00 0.591 0.630 D1 12.00 13.00 0.472 0.512 D2 1.10 1.50 0.043 0.059 D3 14.90 15.50 0.587 0.610 E 10.00 11.00 0.394 0.433 E1 7.50 8.50 0.295 0.335 e 2.54 BSC 0.100 BSC L 13.00 14.50 0.512 0.571 L1 3.00 3.50 0.118 0.138 T° 42.5 47.5 W - 0.1 - 0.004 Dim. Millimeters Inches 1 2 3 Outlines ISOPLUS220 IXYS reserves the right to change limits, conditions and dimensions. 20131024bData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

0.001 0.01 0.1 04 0 8 0 1 2 0 1 6 0 0.0 0.5 1.0 1.5 2.0 0 200 400 600 800 1000 0.0 0.4 0.8 1.2 1.6 V 200 600 100004 0 0 8 0 0 0001001 500 1000 1500 2000 012 Kf TVJ [°C] t[ s ] VFR [V] IRM [A] Qr [μC] IF [A] VF [V] -diF /dt [A/μs] trr [ns] trr [μs] ZthJC [K/W] -diF /dt [A/μs] -diF /dt [A/μ id-]s F /dt [A/μs] Fig. 1 Forward current IF versus VF Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt Fig. 3 Typ. peak reverse current IRM versus -di F/dt Fig. 4 Dynamic parameters Qr,I RM versus TVJ Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt Fig. 7 Transient thermal impedance junction to case VFR trr Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 0.908 0.0052 2 0.350 0.0003 3 0.342 0.017 TVJ =1 5 0 ° C 100°C 25°C IF =3 0 A 15 A 7.5 A TVJ =1 0 0 ° C VR =3 0 0V TVJ = 100°C VR = 300 V IF =3 0 A 15 A 7.5 A IF = 30A 15 A 7.5 A TVJ =1 0 0 ° C VR =3 0 0V IRM Qr TVJ =1 0 0 ° C IF =1 5 A Fast Diode IXYS reserves the right to change limits, conditions and dimensions. 20131024bData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved