DSEC240-04A IXYS | Alldatasheet

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Low Loss and Soft Recovery High Performance Fast Recovery Diode Common Cathode HiPerFRED Part number DSEC240-04A Backside: cathode FAV rr t ns 30 RRM 120 400 V = V I = A2x Features / Advantages: Applications: Package:

  • Planar passivated chips
  • Very low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS) SOT-227UI (minibloc)
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0 The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms Conditions of usage: IXYS reserves the right to change limits, conditions and dimensions. 20160921c Data according to IEC 60747and per semiconductor unless otherwise specified © 2016 IXYS all rights reserved

20 ATVJ = °C

I RM max. reverse recovery current IF = A; 120 T = 100°C VJ -di F = A/µs 600 /dt trr VR = V200 TVJ = °C 25 T = 100°C VJ V = V Symbol Definition Ratings typ. max. IR V I A V F 1.35 R 0.2 K/W R min. 120 VRSM V 2T = 25°C VJ T = °C VJ mA 8V = V R T = 25°C VJ I = A F V T = °C C 115 Ptot 620 WT = 25°C C R K/W 120 400 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 1.63 T = 25°C VJ 150 VF0 V0.74 T = °C VJ 150 rF 2.8 m Ω V1.00 T = °C VJ I = A F V 120 1.33 I = A F 240 I = A F 240 threshold voltage slope resistance for power loss calculation only mA 150 VRRM V400 max. repetitive reverse blocking voltage T = 25°C VJ C J 364 junction capacitance V = V 200 T = 25°C f = 1 MHz R VJ pF IFSM t = 10 ms; (50 Hz), sine; T = 45°C VJ max. forward surge current V = 0 V R T = °C VJ 150 2.00 kA 400 FAV d = rectangular 0.5 average forward current thermal resistance junction to case thJC thermal resistance case to heatsink thCH Fast Diode 400 0.10 IXYS reserves the right to change limits, conditions and dimensions. 20160921c Data according to IEC 60747and per semiconductor unless otherwise specified © 2016 IXYS all rights reserved

Part No. DateCode Assembly Code Assembly Line Package Top °C M D Nm 1.5 mounting torque 1.1 TVJ °C 150 virtual junction temperature -40 Weight g30 Symbol Definition typ. max. min. Conditions operation temperature Unit M T Nm 1.5 terminal torque 1.1 IRMS RMS current 200 Aper terminal 125 -40 SOT-227UI (minibloc) Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering DSEC240-04A 485349 Tube 10 DSEC240-04A Standard Tstg °C 150 storage temperature -40 threshold voltage V0.74 m Ω V 0 max R 0 max slope resistance * 1.6 Equivalent Circuits for Simulation T = VJ I V0 R 0 Fast Diode 150 °C * on die level IXYS reserves the right to change limits, conditions and dimensions. 20160921c Data according to IEC 60747and per semiconductor unless otherwise specified © 2016 IXYS all rights reserved

Outlines SOT-227UI (minibloc) IXYS reserves the right to change limits, conditions and dimensions. 20160921c Data according to IEC 60747and per semiconductor unless otherwise specified © 2016 IXYS all rights reserved

0.0001 0.001 0.01 0.1 0 40 80 120 160 0.0 0.4 0.8 1.2 1.6 0 200 400 600 800 1000 1.55 1.60 1.65 1.70 1.75 1.80 1.85 200 600 1000 0 400 800 0 0 0 10 0 1 500 1000 1500 2000 2500 3000 100 150 200 250 IF [A] TVJ = 100°C VR = 200 V VFR tfr IRM Q r VF [V] Qr [nC] -di F /dt [A/μs] IRM [A] -di F /dt [A/μs] IF = 240 A IF = 120 A IF = 60 A Kf TVJ [°C] trr [ns] -diF /dt [A/μs] -di F /dt [A/μs] VFR [V] t [s] ZthJC [K/W] Fig. 1 Forward current IF versus VF Fig. 2 Typ. reverse recov. charge Q r versus -diF /dt Fig. 3 Typ. peak reverse current IRM versus -di F /dt Fig. 4 Typ. dynamic parameters Q r, IRM versus TVJ Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 6 Typ. peak forward voltage VFR and tfrversus diF /dt Fig. 7 Transient thermal resistance junction to case Constants for ZthJC calculation: i R thi(K/W) t i(s) 1 0.064 0.113 2 0.137 1.105 TVJ = 150°C 100°C 25°C TVJ = 100°C VR = 200 V IF = 240 A IF = 120 A IF = 60 A IF = 240 A IF = 120 A IF = 60 A TVJ = 100°C VR = 200 V TVJ = 100°C IF = 120 A trr [μs] 0.5 Fast Diode IXYS reserves the right to change limits, conditions and dimensions. 20160921c Data according to IEC 60747and per semiconductor unless otherwise specified © 2016 IXYS all rights reserved