DSEC16-12AS IXYS | Alldatasheet

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Low Loss and Soft Recovery High Performance Fast Recovery Diode Common Cathode HiPerFRED Part number DSEC16-12AS Backside: cathode FAV rr t ns 40 RRM 1200 V = V I = A2x Features / Advantages: Applications: Package:

  • Planar passivated chips
  • Very low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS) TO-263 (D2Pak)
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0 The data contained in this product data sheet is ex clusively intended for technically trained staff. T he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect to his application. The specifications of our compon ents may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. Due to technical requirements our product may conta in dangerous substances. For information on the typ es in question please contact your local sales offi ce. Should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms and Conditions of Usage IXYS reserves the right to change limits, condition s and dimensions. 20180806d Data according to IEC 60747and per semiconductor un less otherwise specified © 2018 IXYS all rights reserved

4 ATVJ = °C

IRM max. reverse recovery current IF = A; 10 T = 100°C VJ -di F = A/µs 200 /dt trr VR = V600 TVJ = °C 25 T = 100°C VJ V = V Symbol Definition Ratings typ. max. IR V I A VF 2.94 R 2.5 K/W R min. VRSM V

60 T = 25°C VJ

T = °C VJ mA 0.25 V = V R T = 25°C VJ I = A F V T = °C C 135 Ptot 60 WT = 25°C C R K/W 1200 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 3.57 T = 25°C VJ 150 VF0 V1.20 T = °C VJ 175 rF 57 mΩ V1.96 T = °C VJ I = A F V 2.56 I = A F 20 I = A F 20 threshold voltage slope resistance for power loss calculation only µA 150 VRRM V1200 max. repetitive reverse blocking voltage T = 25°C VJ CJ 3junction capacitance V = V 600 T = 25°C f = 1 MHz R VJ pF IFSM t = 10 ms; (50 Hz), sine; T = 45°C VJ max. forward surge current V = 0 V R T = °C VJ 175 40 A 1200 FAV d = rectangular 0.5 average forward current thermal resistance junction to case thJC thermal resistance case to heatsink thCH Fast Diode 1200 0.25 IXYS reserves the right to change limits, condition s and dimensions. 20180806d Data according to IEC 60747and per semiconductor un less otherwise specified © 2018 IXYS all rights reserved

Part No. Logo Assembly Code XXXXXXXXX IXYS Zyyww 000000 Assembly Line Package Top °C TVJ °C 175 virtual junction temperature -55 Weight g2 Symbol Definition typ. max. min. Conditions operation temperature Unit FC N60 mounting force with clip 20 IRMS RMS current 35 Aper terminal 150 -55 TO-263 (D2Pak) DSEC16-12AS-TUB Tube 50 507915 DSEC16-12AS Similar Part Package Voltage class DSEC16-12A TO-220AB (3) 1200 Delivery Mode Quantity Code No. Ordering Number Marking on Product Alternative Ordering DSEC16-12AS 507922 Tape & Reel 800 DSEC16-12AS Standard Tstg °C 150 storage temperature -55 threshold voltage V1.2 mΩ V0 max R0 max slope resistance * 54 Equivalent Circuits for Simulation T = VJ I V0 R0 Fast Diode 175 °C * on die level IXYS reserves the right to change limits, condition s and dimensions. 20180806d Data according to IEC 60747and per semiconductor un less otherwise specified © 2018 IXYS all rights reserved

W A c L E 2x e L1 D 321 3.81 (0.150) 1.78 (0.07) 2.54 (0.100) 3.05 (0.120) 10.92 (0.430) 9.02 (0.355) mm (Inches) Recommended min. foot print 3x b2 2x b H Supplier Option min max min max A 4.06 4.83 0.160 0.190 b 0.51 0.99 0.020 0.039 b2 1.14 1.40 0.045 0.055 c 0.40 0.74 0.016 0.029 c2 1.14 1.40 0.045 0.055 D 8.38 9.40 0.330 0.370 D1 8.00 8.89 0.315 0.350 E 9.65 10.41 0.380 0.410 E1 6.22 8.50 0.245 0.335 e H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 1.02 1.68 0.040 0.066 W typ. 0.02 0.040 typ. 0.0008 0.002 Dim. Millimeter Inches typ. 0.10 typ. 0.004 2.41 0.095 0.098 4.28 0.169 All dimensions conform with and/or within JEDEC standard. 2,54 BSC 0,100 BSC 2.5 1 2/4 3 Outlines TO-263 (D2Pak) IXYS reserves the right to change limits, condition s and dimensions. 20180806d Data according to IEC 60747and per semiconductor un less otherwise specified © 2018 IXYS all rights reserved

0.001 0.01 0.1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 0 200 400 600 800 1000 120 0.0 0.4 0.8 1.2 200 600 10000 400 800 0 0 0 10 0 1 500 1000 1500 2000 0 1 2 3 4 Kf TVJ [°C] t [s] VFR [V] IRM [A] Qr [µC] IF [A] VF [V] -diF /dt [A/µs] trr [ns] tfr [µs] ZthJC [K/W] -diF /dt [A/µs] -diF i d -] s µ / A [ t d / F /dt [A/µs] Fig. 1 Forward current IF versus VF Fig. 2 Typ. reverse recov. charge Q r versus -diF /dt Fig. 3 Typ. peak reverse current IRM versus -di F /dt Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt Fig. 7 Transient thermal impedance junction to case tfrVFR IF = 20 A IF = 10 A IF = 5 A IF = 20 A IF = 10 A IF = 5 A IF = 20 A IF = 10 A IF = 5 A IRM Qr TVJ = 25°C 100°C 150°C Constants for ZthJC calculation: i R thi (K/W) t i (s) 1 0.0200 0.0002 2 0.3000 0.0040 3 0.8000 0.0200 4 1.3800 0.0100 TVJ = 100°C VR = 600 V TVJ = 100°C VR = 600 V TVJ = 100°C VR = 600 V TVJ = 100°C IF = 10 A VR = 600 V Fast Diode IXYS reserves the right to change limits, condition s and dimensions. 20180806d Data according to IEC 60747and per semiconductor un less otherwise specified © 2018 IXYS all rights reserved