DSEC16-12 IXYS | Alldatasheet

Document overview

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Technical content

Features

G International standard package G Planar passivated chips G Very short recovery time G Extremely low switching losses G Low IRM -values G Soft recovery behaviour G Epoxy meets UL 94V-0

Applications

G Antiparallel diode for high frequency switching devices G Antisaturation diode G Snubber diode G Free wheeling diode in converters and motor control circuits G Rectifiers in switch mode power supplies (SMPS) G Inductive heating G Uninterruptible power supplies (UPS) G Ultrasonic cleaners and welders Advantages G Avalanche voltage rated for reliable operation G Soft reverse recovery for low EMI/RFI G Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see IXYS Catalog 2000 (CD) TO-220 AB C A A A C A A = Anode, C = Cathode, TAB = Cathode C (TAB) Pulse test:x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 µs, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. HiPerFRED TM Epitaxial Diode with common cathode and soft recovery DSEC 16-12A IFAV = 2x 10 A VRRM = 1200 V trr = 40 ns VRSM VRRM Type V V 1200 1200 DSEC 16-12A Symbol Test Conditions Maximum Ratings IFRMS 14 A IFAVM TC = 115°C; rectangular, d = 0.5 10 A IFRM tP < 10 µs; rep. rating, pulse width limited by TVJM tbd A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 40 A EAS TVJ = 25°C; non-repetitive 6.9 mJ IAS = 8 A; L = 180 µH IAR VA = 1.25·VR typ.; f = 10 kHz; repetitive 0.8 A TVJ -55...+175 °C TVJM 175 °C Tstg -55...+150 °C Ptot TC = 25°C 60 W Weight typical 2 g Symbol Test Conditions Characteristic Values typ. max. IR x TVJ = 25°C VR = VRRM 60 µA TVJ = 150°C VR = VRRM 0.25 mA VF y IF = 10 A; TVJ = 150°C 1.96 V TVJ = 25°C 2.94 V R thJC 2.5 K/W R thCH 0.5 K/W trr IF = 1 A; -di/dt = 50 A/µs; 40 ns VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 12 A; -diF/dt = 100 A/µs8 . 5 A TVJ = 100°C 937

© 1999 IXYS All rights reserved 2 - 2 DSEC 16-12A 200 600 10000 400 800 100 110 120 130 140 150 0.001 0.01 0.1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 Kf TVJ -diF/dt t s K/W 0 200 400 600 800 1000 120 0.0 0.4 0.8 1.2 VFR diF/dt V 200 600 10000 400 800 100 1000 500 1000 1500 2000 01234 IRMQ r IF A VF -diF/dt -diF/dt A/µs A V nC A/µs A/µs trr ns tfr ZthJC A/µs µs DSEP 8-12A / DSEC 16-12A IF= 20A IF= 10A IF= 5A TVJ= 100°C VR = 600V TVJ= 100°C IF = 10A Fig. 3 Peak reverse current IRM versus -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt Fig. 1 Forward current IF versus VF TVJ= 100°C VR = 600V TVJ= 100°C VR = 600V IF= 20A IF= 10A IF= 5A Q r IRM Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt IF= 20A IF= 10A IF= 5A tfr VFR Fig. 7 Transient thermal resistance junction to case Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 1.449 0.0052 2 0.558 0.0003 3 0.493 0.017 TVJ= 25°C TVJ=100°C TVJ=150°C