DSEC16-06A IXYS | Alldatasheet

Document overview

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Technical content

Features

G International standard package G Planar passivated chips G Very short recovery time G Extremely low switching losses G Low IRM -values G Soft recovery behaviour G Epoxy meets UL 94V-0

Applications

G Antiparallel diode for high frequency switching devices G Antisaturation diode G Snubber diode G Free wheeling diode in converters and motor control circuits G Rectifiers in switch mode power supplies (SMPS) G Inductive heating G Uninterruptible power supplies (UPS) G Ultrasonic cleaners and welders Advantages G Avalanche voltage rated for reliable operation G Soft reverse recovery for low EMI/RFI G Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf TO-220 AB C A A A C A A = Anode, C = Cathode, TAB = Cathode C (TAB) Pulse test:x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 /G109s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. HiPerFRED TM Epitaxial Diode with common cathode and soft recovery DSEC 16-06A IFAV = 2x 10 A VRRM = 600 V trr = 35 ns VRSM VRRM Type V V 600 600 DSEC 16-06A Symbol Conditions Maximum Ratings IFRMS 35 A IFAVM TC = 135°C; rectangular, d = 0.5 10 A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 50 A EAS TVJ = 25°C; non-repetitive 0.1 mJ IAS = 0.9 A; L = 180 µH IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A TVJ -55...+175 °C TVJM 175 °C Tstg -55...+150 °C Ptot TC = 25°C 60 W Weight typical 2 g Symbol Conditions Characteristic Values typ. max. IR x TVJ = 25°C VR = VRRM 60 /G109A TVJ = 150°C VR = VRRM 0.25 mA VF y IF = 10 A; TVJ = 150°C 1.42 V TVJ = 25°C 2.10 V R thJC 2.5 K/W R thCH 0.5 K/W trr IF = 1 A; -di/dt = 50 A//G109s; 35 ns VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 12 A; -diF/dt = 100 A//G109s4 . 4 A TVJ = 100°C 008

© 2000 IXYS All rights reserved 2 - 2 200 600 10000 400 800 100 110 120 0.001 0.01 0.1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 Kf TVJ -diF/dt t s K/W 0 200 400 600 800 1000 0.0 0.3 0.6 0.9 1.2 VFR diF/dt V 200 600 10000 400 800 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IRMQ r IF A VF -diF/dt -diF/dt A//c109 s A V nC A//c109 s A//c109 s trr ns tfr ZthJC A//c109 s µs DSEP 8-06A/DSEC16-06A IF= 20A IF= 10A IF= 5A TVJ= 100°C VR = 300V TVJ= 100°C IF = 10A Fig. 3 Peak reverse current IRM versus -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt Fig. 1 Forward current IF versus VF TVJ= 100°C VR = 300V TVJ= 100°C VR = 300V IF= 20A IF= 10A IF= 5A Q r IRM Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt IF= 20A IF= 10A IF= 5A tfr V FR Fig. 7 Transient thermal resistance junction to case Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 1.449 0.0052 2 0.5578 0.0003 3 0.4931 0.0169 TVJ=150°C TVJ=100°C TVJ= 25°C NOTE: Fig. 2 to Fig. 6 shows typical values DSEC 16-06A 008