DSEC16-02A IXYS | Alldatasheet

Document overview

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Technical content

Features

G International standard package G Planar passivated chips G Very short recovery time G Extremely low switching losses G Low IRM -values G Soft recovery behaviour G Epoxy meets UL 94V-0

Applications

G Antiparallel diode for high frequency switching devices G Antisaturation diode G Snubber diode G Free wheeling diode in converters and motor control circuits G Rectifiers in switch mode power supplies (SMPS) G Inductive heating G Uninterruptible power supplies (UPS) G Ultrasonic cleaners and welders Advantages G Avalanche voltage rated for reliable operation G Soft reverse recovery for low EMI/RFI G Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf TO-220 AB C A A A C A A = Anode, C = Cathode, TAB = Cathode C (TAB) Pulse test:x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 /G109s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. HiPerFRED TM Epitaxial Diode with common cathode and soft recovery DSEC 16-02A IFAV = 2x 8 A VRRM = 200 V trr = 25 ns VRSM VRRM Type V V 200 200 DSEC 16-02A Symbol Conditions Maximum Ratings IFRMS 35 A IFAVM TC = 150°C; rectangular, d = 0.5 8 A IFRM tP < 10 /G109s; rep. rating, pulse width limited by TVJM tbd A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 80 A EAS TVJ = 25°C; non-repetitive 0.5 mJ IAS = 2 A; L = 180 µH IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.2 A TVJ -55...+175 °C TVJM 175 °C Tstg -55...+150 °C Ptot TC = 25°C 60 W Weight typical 2 g Symbol Conditions Characteristic Values typ. max. IR x TVJ = 25°C VR = VRRM 50 /G109A TVJ = 150°C VR = VRRM 0.2 mA VF y IF = 8 A; T VJ = 150°C 0.94 V TVJ = 25°C 1.30 V R thJC 2.5 K/W R thCH 0.5 K/W trr IF = 1 A; -di/dt = 50 A//G109s; 25 ns VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 10 A; -diF/dt = 100 A//G109s4 . 1 A TVJ = 100°C 008