DSDI60 IXYS | Alldatasheet
Document overview
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Technical content
Features
G International standard package JEDEC TO-247 AD G Planar passivated chips G Very short recovery time G Extremely low switching losses G Low IRM -values G Soft recovery behaviour G Epoxy meets UL 94V-0 G Creepage distance between leads 8.5 mm
Applications
G Antiparallel diode for high frequency switching devices G Anti saturation diode G Snubber diode G Free wheeling diode in converters and motor control circuits G Rectifiers in switch mode power supplies (SMPS) G Inductive heating and melting G Uninterruptible power supplies (UPS) G Ultrasonic cleaners and welders Advantages G High reliability circuit operation G Low voltage peaks for reduced protection circuits G Low noise switching G Low losses G Operating at lower temperature or space saving by reduced cooling Dimensions See DSEI 60-12 on page D5 - 27 x IFAVM rating includes reverse blocking losses at TVJM , VR = 0.8 VRRM , duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions VRSM VRRM Type V V 1400 1400 DSDI 60-14A 1600 1600 DSDI 60-16A 1800 1800 DSDI 60-18A Symbol Test Conditions Maximum Ratings I FRMS TVJ = TVJM 100 A IFAVM /i255/i255 x TC = 60/G176C; rectangular, d = 0.5 63 A IFRM tP < 10 /G109s; rep. rating, pulse width limited by TVJM 800 A IFSM TVJ = 45/G176C; t = 10 ms (50 Hz), sine 500 A t = 8.3 ms (60 Hz), sine 540 A TVJ = 150/G176C; t = 10 ms (50 Hz), sine 450 A t = 8.3 ms (60 Hz), sine 480 A I2t TVJ = 45/G176C t = 10 ms (50 Hz), sine 1250 A 2s t = 8.3 ms (60 Hz), sine 1200 A 2s TVJ = 150/G176C; t = 10 ms (50 Hz), sine 1000 A 2s t = 8.3 ms (60 Hz), sine 950 A 2s TVJM 150 /G176C Tstg -40...+150 /G176C Ptot TC = 25/G176C 416 W Weight 6g Symbol Test Conditions Characteristic Values typ. max. IR TVJ = 25/G176CV R = VRRM 12 m A TVJ = 25/G176CV R = 0.8 • VRRM 0.5 mA TVJ = 125/G176CV R = 0.8 VRRM 3m A VF IF = 70 A; T VJ = 125/G176C 2.6 V TVJ =2 5 /G176C 4.1 V VT0 For power-loss calculations only 1.9 V rT TVJ = TVJM 10 m /G87 R thJC 0.4 K/W R thCK 0.25 K/W trr IF = 1 A; -di/dt = 200 A//G109s; VR = 30 V; TVJ = 25/G176C 40 ns trr IF = 70 A; -di/dt = 500 A//G109s; VR = 1000 V; 300 ns IRM TVJ = 25/G176C 60 A trr IF = 70 A; -di/dt = 500 A//G109s; VR = 1000 V; 400 ns IRM TVJ = 125/G176C 85 A Super Fast Recovery Diode A C TO-247 AD C C A A = Anode, C = Cathode 036 Preliminary Data