DSB80C45HB IXYS | Alldatasheet

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Low Loss and Soft Recovery High Performance Schottky Diode Common Cathode Schottky Diode Gen ² 1 2 3 Part number DSB80C45HB Backside: cathode FAV FVV 0.59 RRM V= V I= A 2x Features / Advantages: Applications: Package:

  • Very low Vf
  • Extremely low switching losses
  • Low Irm values
  • Improved thermal behaviour
  • High reliability circuit operation
  • Low voltage peaks for reduced protection circuits
  • Low noise switching
  • Rectifiers in switch mode power supplies (SMPS)
  • Free wheeling diode in low voltage converters TO-247
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. 20131030bData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

EAS mJIAS =A L = µ H IAR AVA =f = 1 0 k H z1.5·VR typ.: tbd tbdnon-repetitive avalanche energy repetitive avalanche current T= ° C 25VJ V = V Symbol Definition Ratings typ. max. IR V I A VF 0.62 R 0.7 K/ W R min. VRSM V 15T = 25°CVJ T = °CVJ mA150V = VR T = 25°CVJI = AF V T = °CC 125 Ptot 180 WT = 25°CC R K/W max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 0.90 T = 25°CVJ 100 VF0 V0.31T = °CVJ 150 rF 7 mΩ V0.59T = °CVJI = AF V 0.88 I = AF 80 I = AF 80 threshold voltage slope resistance for power loss calculation only mA 125 VRRM V45max. repetitive reverse blocking voltage T = 25°CVJ CJ 1.38junction capacitance V = V5 T = 25°Cf = 1 MHzR VJ nF IFSM t = 10 ms; (50 Hz), sine; T = 45°C VJmax. forward surge current V = 0 VR T = °CVJ 150 600 A FAV d =rectangular 0.5 average forward current thermal resistance junction to casethJC thermal resistance case to heatsinkthCH Schottky 0.25 IXYS reserves the right to change limits, conditions and dimensions. 20131030bData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

Part No. Logo IXYS abcd Assembly Code ZyywwAssembly Line XXXXXXXXX D S B C HB Part number Diode Schottky Diode ultra low VF Common Cathode TO-247AD (3) Current Rating [A] Reverse Voltage [V] Package Top °C MD Nm1.2mounting torque 0.8 TVJ °C150virtual junction temperature -55 Weight g6 Symbol Definition typ. max.min.Conditions operation temperature Unit FC N120mounting force with clip 20 I RMS RMS current 50 Aper terminal 125-55 TO-247 Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering DSB80C45HB 504883Tube 30DSB80C45HBStandard Tstg °C150storage temperature -55 threshold voltage V0.31 mΩ V0 max R0 max slope resistance * 4.5 Equivalent Circuits for Simulation T =VJ I V0 R0 Schottky 150 °C* on die level IXYS reserves the right to change limits, conditions and dimensions. 20131030bData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

S Ø P Ø P1 D2 123 L 2x b2 3x b 2x e 2x E2 D E Q A A2 C Sym. Inches Millimeter min. max. min. max. A 0.185 0.209 4.70 5.30 A1 0.087 0.102 2.21 2.59 A2 0.059 0.098 1.50 2.49 D 0.819 0.845 20.79 21.45 E 0.610 0.640 15.48 16.24 E2 0.170 0.216 4.31 5.48 e 0.215 BSC 5.46 BSC L 0.780 0.800 19.80 20.30 L1 - 0.177 - 4.49 Ø P 0.140 0.144 3.55 3.65 Q 0.212 0.244 5.38 6.19 S 0.242 BSC 6.14 BSC b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 D1 0.515 - 13.07 - D2 0.020 0.053 0.51 1.35 E1 0.530 - 13.45 - Ø P1 - 0.29 - 7.39 1 2 3 Outlines TO-247 IXYS reserves the right to change limits, conditions and dimensions. 20131030bData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved